MIG100J7CSB1W
2004-10-01 1/10
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG100J7CSB1W (600V/100A 7in1)
High Power Switching Applications
Motor Control Applications
Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against
short-circuit current, overcurrent, undervoltage and overtemperature) into a single package.
The electrodes are isolated from the case
Low thermal resistance
VCE (sat) = 1.9 V (typ.)
UL recognized: File No.E87989
Weight: 278 g (typ.)
Equivalent Circuit
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V)
8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L)
15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L)
16 19 20
W V U B N P
FO IN VD GND
GND VS OUT
FO IN VDGND
GND VS OUT
FO IN VD GND
GND VS OUT
FO IN VDGND
GND VSOUT
GND IN FO VD
GND VSOUT
GND IN FO VD
GND VSOUT
GND IN FO VD
GND VS OUT
18 17 14 1315 12 11 10 9 8 7 6 5 4 3 2 1
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Package Dimensions
Unit: mm
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V)
7. IN (V ) 8. GND (V ) 9. VD (W) 10. FO (W) 11. IN (W ) 12. GND (W)
13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y)
19. IN (Z) 20. GND (L)
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Signal Terminal Layou t
Unit: mm
1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V)
7. IN (V ) 8. GND (V ) 9. VD (W) 10. FO (W) 11. IN (W ) 12. GND (W)
13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y)
19. IN (Z) 20. GND (L)
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Maximum Ra tings (Tj = 25°C )
Stage Characteristic Condition Symbol Rating Unit
Supply voltage P-N Power terminal VCC 450 V
Collector-emitter voltage V
CES 600 V
Coll e ctor curren t Tc = 25°C, DC IC 100 A
Forward current Tc = 25°C, DC IF 100 A
Collector power dissipation Tc = 25°C, DC PC 590 W
Inverter
Junction temperature Tj 150 °C
Supply voltage P-N Power te rminal VCC 450 V
Collector-emitter voltage V
CES 600 V
Coll e ctor curren t Tc = 25°C, DC IC 50 A
Reverse voltage V
R 600 V
Forward current Tc = 25°C, DC IF 50 A
Collector power dissipation Tc = 25°C, DC PC 340 W
Brake
Junction temperature Tj 150 °C
Control supply voltage VD-GND Terminal VD 20 V
Input voltage IN-GND Terminal VIN 20 V
Fault output voltage FO-GND Terminal VFO 20 V
Control
Fault output current FO sink current IFO 14 mA
Operating temperature Tc 20~ + 100 °C
Storage temperature Range Tstg 40~ + 125 °C
Isolation voltage AC 1 min VISO 2500 V
Screw torque (Terminal) M4 2
Module
Screw torque (Mounting) M5 3
Nm
Electrical Characteristics
1. Inverter stage
Characteristics Symbol Test Condition Min Typ. Max Unit
Tj = 25°C 1
Coll e ctor cut-off curr e nt ICEX V
CE = 600 V Tj = 125°C 10
mA
Tj = 25°C 1.6 1.9 2.3
Collector-emitter saturation voltage VCE ( sat) VD = 15 V
IC = 100 A
VIN = 15 V 0 V Tj = 125°C 2.1 V
Forward voltage VF I
F = 100 A, Tj = 25°C 2.1 2.5 V
ton 1.3 2.2
tc (on) 0.3
trr 0.2
toff 1.1 2.1
Switching time
tc (off)
VCC = 300 V, IC = 100 A
VD = 15 V, VIN = 15 V 0 V
Tj = 25°C, Inductive load
(Note 1)
0.2
µs
Note 1: Switching time test circuit & timing chart
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2. Brake stage
Characteristics Symbol Test Condition Min Typ. Max Unit
Tj = 25°C 1
Coll e ctor cut-off curr e nt ICEX V
CE = 600 V Tj = 125°C 10
mA
Tj = 25°C 1.8 2.2
Collector-emitter saturation voltage VCE ( sat) VD = 15 V
IC = 50 A
VIN = 15 V 0 V Tj = 125°C 2.0 V
Tj = 25°C 1
Reverse current IR V
R = 600 V Tj = 125°C 10 mA
Forward voltage VF I
F = 50 A, Tj = 25°C 1.5 1.9 2.3 V
ton 1.3 1.8
tc (on) 0.65
trr 0.8
toff 1.1 2.1
Switching time
tc (off)
VCC = 300 V, IC = 50 A
VD = 15 V, VIN = 15 V 0 V
Tj = 25°C, Inductive load
(Note 1)
0.2
µs
Note 1: Switching time test circuit & timing chart
3. Control stage (Tj = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
High side ID (H) 13 17
Control circuit current Low side ID ( L) VD = 15 V 52 68 mA
Input on signal voltage VIN (on) 1.4 1.6 1.8
Input off signal voltage VIN (off) VD = 15 V 2.2 2.5 2.8 V
Protection IFO (on) 10 12
Fault output current Normal IFO (off) VD = 15 V 0.1
mA
Inverter 160
Over current protection
trip level Brake OC VD = 15 V, Tj
<
=
125°C 80 A
Inverter 160
Short circuit protection trip
level Brake SC VD = 15 V, Tj
<
=
125°C 80 A
Over current cut-off time toff (OC) V
D = 15 V 5 µs
Trip level OT 110 118 125
Over temperature
protection Reset level OTr Case temperature 98 °C
Trip level UV 11.0 12.0 12.5
Control supply under
voltage protection Reset level UVr 12.0 12.5 13.0 V
Fault output pulse width tFO V
D = 15 V 1 2 3 ms
4. Thermal resistance (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Invert e r IGBT 0.210
Inverter FRD 0.313
Brake IGBT 0.360
Junction to case thermal resistance Rth (j-c)
Brake FRD 0.600
°C/W
Case to fin thermal resistance Rth (c-f) C ompound is applied 0.017 °C/W
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Switching Time Test Circuit
Timing Chart
PG
TLP559 (IGM)
15
V
0.1 µF
10 µF
15
k
Intelligent power module
VD
IN
GND
OUT
VS
GND
U (V, W, B)
P
VCC
15
V
0.1 µF
10 µF
15
k
VD
IN
GND
OUT
VS
GND
IF =
16mA
N
Input pulse
VIN Wav efor m
IC Wa vefo r m
VCE Wa v e f o rm
2.5 V 1.6 V
15 V
10% 10%
t
o
ff t
c
(o
ff
)
10% 10%
t
o
nt
c
(o
n
)
90% Irr
trr
0
Irr 20% Irr
90%
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5. Recommended conditions for application
Characteristics Symbol Test Condition Min Typ. Max Unit
Supply voltage VCC P-N Power terminal 300 400 V
Control supply voltage VD V
D-GND Signal terminal 13.5 15 16.5 V
Carrier frequency fc PWM Control 20 kHz
Dead time tdead Switching time test circuit
(See page.6) (Note 2) 3 µs
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
ti me given abov e.
Dead Time Timing Chart
tdead
15
V
VIN Wa vefor m
VIN Wa vefor m
0
15
V
0
tdead
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00 1 3 2 4
Common cathode
:Tj = 25°C
:Tj = 125°C
50
200
100
150
10
0.010 20 120
0.1
1
Tj = 125°C
VCC = 300 V
VD = 15 V
L-Load
ton
toff
tc (on)
tc (off)
0.03
0.05
0.3
0.5
3
5
40 80
60 100
10
0.010 20 120
0.1
1
Tj = 25°C
VCC = 300 V
VD = 15 V
L-Load
ton
toff
tc (on)
tc (off)
0.03
0.05
0.3
0.5
3
5
40 80
60 100
200
00 1 3 4
50
2
VD = 17 V
Common emitter
Tj = 125°C
13 V
15 V
100
150
200
00 1 3 4
50
2
VD = 17 V
Common emitter
Tj = 25°C
13 V
15 V
100
150
Forward current IF (A)
Switching time (µs)
Collector-emitter voltage VCE (V)
IC – VCE
Collector c urre nt IC (A)
Collector-emitter voltage VCE (V)
IC – VCE
Collector c urre nt IC (A)
Collector current IC (A)
Switching time – IC
Switching time (µs)
Collector current IC (A)
Switching time – IC
Forward voltage VF (V)
IF – VF
Forward current IF (A)
trr, Irr – IF
Peak reverse recovery current Irr (A)
Reverse recovery time trr (×10ns)
100
10 20 60 120
3
30
80
Common cathode
:Tj = 25°C
:Tj=125°C
Irr
10
trr
40 100
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1
0.001
0.001 0.01 1
0.003
0.1
0.01
0.005
0.03
0.1
0.05
0.3
0.5
10
Tc = 25°C Diode stage
Transistor stage
1
0.001
0.001 0.01 1
0.003
0.1
0.01
0.005
0.03
0.1
0.05
0.3
0.5
10
Tc = 25°C Diode stage
Transistor stage
OC
180
00 200 600
160
140
80
20
400
Tj
<
=
125°C
VD = 15 V
100
60
100 300 700 500
40
120
100
00 5 15 25
60
80
10
40
20
20
VD = 15 V
Tj = 25°C
30
00 5 15 25
15
20
10
25
10
5
20
VD = 15 V
Tj = 25°C
Transient thermal resist ance Rth (t) (°C/W)
Collect or cur re nt IC (A)
Case temperature TC (°C)
OC – TC
Over current protection trip level
OC (A)
Carrier frequency fc (kHz)
ID (H ) – fc
High side control circuit current ID (H) (mA)
Carrier frequency fc (kHz)
ID (L) – fc
Low side control circuit current ID (L) (mA)
Collector-emitter voltage VCE (V)
Reverse bias SOA
Pulse width tw (s)
Rth (t) – tw Inverter stage
Pulse width tw (s)
Rth (t) – tw Brake stage
Transient thermal resist ance Rth (t) (°C/W)
300
00 25 75 150
150
250
50 100 125
100
VD = 15 V
Inverter stage
Brake stage
50
200
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0.010
0.1
0.3
10
1
60 12040 80
VCC = 300 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
20 100
0.03
0.05
0.5
3
5
Turn on loss IC
Turn off loss IC
Collector current IC (A)
Collector current IC (A)
Turn off loss Eoff (mJ)
Turn on loss Eon (mJ)
0.010
0.1
0.3
10
1
60 120 40 80
VCC = 300 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
20 100
0.03
0.05
0.5
3
5