© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1200 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C ( Chip Capability ) 200 A
IC90 TC= 90°C 120 A
ILRMS Terminal Current Limit 120 A
ICM TC= 25°C, 1ms 370 A
SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 240 A
(RBSOA) Clamped Inductive Load VCES < 1200 V
PCTC= 25°C 830 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C
MdMounting Torque ( IXGK ) 1.13/10 Nm/lb.in.
FCMounting Force ( IXGX ) 20..120/4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC= 250μA, VCE = 0V 1200 V
VGE(th) IC= 1mA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 μA
T
J = 125°C 5 mA
IGES VCE = 0V, VGE = ±20V ±400 nA
VCE(sat) IC= 100A, VGE = 15V, Note 1 2.4 3.0 V
DS100152(05/09)
GenX3TM 1200V IGBTs IXGK120N120B3
IXGX120N120B3
VCES = 1200V
IC90 = 120A
VCE(sat) ≤ ≤
≤ ≤
≤ 3.0V
High Speed Low Vsat PT IGBTs
for 3-20 kHz Switching
G = Gate E = Emitter
C = Collector TAB = Collector
(TAB)
TO-264 (IXGK)
E
G
CE
PLUS 247TM (IXGX)
GC (TAB)
E
Advance Technical Information
Features
zOptimized for Low Conduction and
Switching Losses
zSquare RBSOA
zInternational Standard Packages
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK120N120B3
IXGX120N120B3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 40 70 S
Cies 9700 pF
Coes VCE = 25V, VGE = 0V, f = 1 MHz 670 pF
Cres 255 pF
Qg(on) 470 nC
Qge IC = IC90, VGE = 15V, VCE = 0.5 • VCES 67 nC
Qgc 190 nC
td(on) 36 ns
tri 88 ns
Eon 5.5 mJ
td(off) 275 ns
tfi 145 ns
Eoff 5.8 mJ
td(on) 34 ns
tri 88 ns
Eon 6.1 mJ
td(off) 315 ns
tfi 570 ns
Eoff 10.3 mJ
RthJC 0.15 °C/W
RthCK 0.15 °C/W
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 600V, RG = 2Ω
Note 2
Inductive load, TJ = 125°C
IC = 100A, VGE = 15V
VCE = 600V, RG = 2Ω
Note 2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
PLUS 247TM (IXGX) Outline
TO-264 (IXGK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Note
1. Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.
2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES,
Higher TJ or Increased RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
