MMBD4448HAQW/
200mW
Switching Diodes
Features
• Fast Switching Speed
• For General Purpose Switching Applications
• High Conductance, Power Dissipation
• Ultra-Small Surface Mount Package
Maximum Ratings
Symbol Rating Rating Unit
VRM Non-Repetitive Peak Reverse Voltage 100 V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage 80 V
VR(RMS) RMS Reverse Voltage 57 V
IFM Forward Continuous Current 500 mA
IO Average Rectified Output Current 250 mA
IFSM Peak Forward Surge Current @1.0s
@1.0s 4.0
1.5
A
R©JA Thermal Resistance Junction to Ambient 625 к/W
PD Power dissipation 200 mW
TJJunction Temperature 150 к
TSTG Storage Temperature -65 to +150 к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Test Conditions
V(BR) Reverse Breakdown Voltage 80V --- IR=100A
IRReverse Voltage Leakage
Current ---
100nA
50A
30A
25nA
VR=70V
VR=75V, TJ=150к
VR=25V, TJ=150к
VR=20V
VF Forward Voltage
0.62
---
---
---
0.72V
0.855V
1.0V
1.25V
IF=5.0mA
IF=10mA
IF=50mA
IF=150mA
CT Total Capacitance --- 3.5pF VR=6V, f=1MHZ
trr Reverse Recovery Time --- 4.0ns IF=5mA,
VR=6V
www.mccsemi.com
Revision: A 2011/01/01
SOT-363
J
M
A
C
B
G
H
K
DL
omponents
20736 Marilla Street Chatsworth
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MCC
ADW/CDW/SDW/
A1
A2
C2
C1
C2
C1
C1
A3
C2
A1
C3
A2
C1
C2
A2
A1
A2
A1
C2
C1
NC
A
C3
C4
AC
1
AC
2
C2
A1
A2
C1
Marking: KA6
MMBD4448HADW
Marking: KA5
MMBD4448HAQW Marking: KA7
MMBD4448HCDW
Marking: KAA
MMBD4448HTW
Marking: KAB
MMBD4448HSDW
DIMENSIONS
Marking: KA4
MMBD4448HCQW
A2
A1C
A3
A4
CQW/TW
TM
Micro Commercial Components
NC
A2
A2
1 of 4
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .006 .014 0.15 0.35
B .045 .053 1.15 1.35
C .085 .096 2.15 2.45
D .026 0.65Nominal
G .047 .055 1.20 1.40
H .071 .087 1.80 2.20
J --- .004 --- 0.10
K .035 .043 0.90 1.10
L .010 .018 0.26 0.46
M .003 .006 0.08 0.15
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)