2SK2226-01L,S N-channel MOS-FET F-III Series 150V > Features - 0,08 20A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 150 150 20 80 20 80 150 -55 ~ +150 Unit V V A A V W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=150V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=20A VGS=10V RGS=25 Tch=25C L=100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 150 1,0 Test conditions channel to air channel to case Min. 10 Typ. 1,5 10 0,2 10 0,065 0,055 20 2300 330 150 15 20 450 100 Max. 2,5 500 1,0 100 0,1 0,08 3450 500 230 25 30 700 150 20 1,1 125 0,6 Typ. 1,5 Max. 125 1,56 Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C Unit C/W C/W 2SK2226-01L,S N-channel MOS-FET 150V 0,08 20A F-III Series 80W > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch Tch [C] Typical Drain-Source-On-State-Resistance vs. ID VGS(th) [V] Qg [nC] Allowable Power Dissipation vs. TC IF [A] Transient Thermal Impedance 12 Zth(ch-c)[K/W] PD [W] Tc [C] 9 VSD [V] Safe operation area Forward Characteristics of Reverse Diode ID[A] 10 6 Tch [C] VGS [V] 8 VDS [V] C [nF] Typical Input Charge 7 VDS [V] Gate Threshold Voltage vs. Tch 5 ID [A] Typical Capacitance vs. VDS VGS [V] gfs [S] RDS(ON) [] ID [A] Typical Forward Transconductance vs. ID 4 3 ID [A] ID [A] VDS [V] 2 RDS(ON) [] 1 Typical Transfer Characteristics VDS [V] This specification is subject to change without notice! t [S]