MT45W8MW16BGX-7013LIT - Micron Technology, Inc.

Products and specifications discussed herein are subject to change by Micron without notice.

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65 Micron Technology, Inc., reserves the right to change products or specifications without notice.

Async/Page/Burst CellularRAMTM 1.5

MT45W8MW16BGX

Features

• Single device supports asynchronous, page, and

burst operations

•V

CC, VCCQ voltages

–1.70–1.95V VCC

–1.7–3.6V1 VCCQ

• Random access time: 70ns

• Burst mode READ and WRITE access

–4, 8, 16, or 32 words, or continuous burst

–Burst wrap or sequential

–MAX clock rate: 133 MHz (tCLK = 7.5ns)

–Burst initial latency: 35ns (5 clocks) at 133 MHz

–tACLK: 5.5ns at 133 MHz

•Page mode READ access

–Sixteen-word page size

–Interpage READ access: 70ns

–Intrapage READ access: 20ns

•Low power consumption

–Asynchronous READ: <25mA

–Intrapage READ: <15mA

–Initial access, burst READ:

(37.5ns [5 clocks] at 133 MHz) <45mA

–Continuous burst READ: <40mA

–Standby: <50µA (TYP at 25°C)

–Deep power-down: <3µA (TYP)

•Low-power features

–On-chip temperature-compensated refresh (TCR)

–Partial-array refresh (PAR)

–Deep power-down (DPD) mode

Options Designator

•Configuration

–8 Meg x 16 MT45W8MW16B

–VCC core voltage: 1.70–1.95V

–VCCQ I/O voltage: 1.7–3.6V1

•Package

–54-ball VFBGA—“green” GX

• Timing

–70ns access –70

–85ns access –85

Figure 1: 54-Ball VFBGA Ball Assignment

Notes: 1. The 3.6V I/O and the 133MHz clock fre-

quency exceed the CellularRAM 1.5 Work-

group specification.

Part Number Example:

MT45W8MW16BGX-7013LWT

Options (continued) Designator

•Frequency

–66 MHz 6

–80 MHz 8

–104 MHz 1

–133 MHz 13

• Standby power at 85°C

–Standard: 200µA (MAX) None

–Low power: 160µA (MAX) L

• Operating temperature range

–Wireless (–30°C to +85°C) WT

–Industrial (–40°C to +85°C) IT

1 2 3 4 5 6

Top View

(Ball Down)

LB#

DQ8

DQ9

VSSQ

VCCQ

DQ14

DQ15

A18

WAIT

OE#

UB#

DQ10

DQ11

DQ12

DQ13

A19

CLK

A17

A21

A14

A12

ADV#

CE#

DQ1

DQ3

DQ4

DQ5

WE#

A11

RFU

CRE

DQ0

DQ2

VCC

VSS

DQ6

DQ7

A20

RFU

A16

A15

A13

A10

A22

PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65 Micron Technology, Inc., reserves the right to change products or specifications without notice.

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5

Table of Contents

Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Part-Numbering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Power-Up Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Bus Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Asynchronous Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Page Mode READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Burst Mode Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Mixed-Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

WAIT Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

LB#/UB# Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Low-Power Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Temperature-Compensated Refresh (TCR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Partial-Array Refresh (PAR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Deep Power-Down Mode (DPD). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Access Using CRE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Software Access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

Bus Configuration Register (BCR). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Burst Length (BCR[2:0]) Default = Continuous Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

Burst Wrap (BCR[3]) Default = No Wrap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

Drive Strength (BCR[5:4]) Default = Outputs Use Half-Drive Strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26

WAIT Configuration (BCR[8]) Default = WAIT Transitions One Clock Before Data Valid/Invalid . . . . . . . . .27

WAIT Polarity (BCR[10]) Default = WAIT Active HIGH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27

Latency Counter (BCR[13:11]) Default = Three Clock Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28

Initial Access Latency (BCR[14]) Default = Variable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28

Operating Mode (BCR[15]) Default = Asynchronous Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30

Refresh Configuration Register (RCR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31

PAR (RCR[2:0]) Default = Full Array Refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31

DPD (RCR[4]) Default = DPD Disabled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32

Page Mode Operation (RCR[7]) Default = Disabled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32

Device Identification Register (DIDR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32

Electrical Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33

Timing Requirements. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

Timing Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41

Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .68

PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65 Micron Technology, Inc., reserves the right to change products or specifications without notice.

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5

List of Figures

Figure 1: 54-Ball VFBGA Ball Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Figure 2: Functional Block Diagram – 8 Meg x 16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

Figure 3: Part Number Chart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Figure 4: Power-Up Initialization Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Figure 5: READ Operation (ADV# LOW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Figure 6: WRITE Operation (ADV# LOW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Figure 7: Page Mode READ Operation (ADV# LOW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Figure 8: Burst Mode READ (4-word burst) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Figure 9: Burst Mode WRITE (4-word burst) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Figure 10: Wired-OR WAIT Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Figure 11: Refresh Collision During Variable-Latency READ Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Figure 12: Configuration Register WRITE, Asynchronous Mode, Followed by READ ARRAY Operation . . . . .18

Figure 13: Configuration Register WRITE, Synchronous Mode Followed by READ ARRAY Operation . . . . . . .19

Figure 14: Register READ, Asynchronous Mode Followed by READ ARRAY Operation . . . . . . . . . . . . . . . . . . . .20

Figure 15: Register READ, Synchronous Mode Followed by READ ARRAY Operation . . . . . . . . . . . . . . . . . . . . .21

Figure 16: Load Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

Figure 17: Read Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

Figure 18: Bus Configuration Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Figure 19: WAIT Configuration (BCR[8] = 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27

Figure 20: WAIT Configuration (BCR[8] = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27

Figure 22: Latency Counter (Variable Initial Latency, No Refresh Collision) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29

Figure 24: Refresh Configuration Register Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31

Figure 25: Typical Refresh Current vs. Temperature (ITCR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35

Figure 26: AC Input/Output Reference Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36

Figure 27: AC Output Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36

Figure 28: Initialization Period . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41

Figure 29: DPD Entry and Exit Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41

Figure 30: Asynchronous READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42

Figure 31: Asynchronous READ Using ADV# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43

Figure 32: Page Mode READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44

Figure 33: Single-Access Burst READ Operation – Variable Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45

Figure 34: 4-Word Burst READ Operation – Variable Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46

Figure 35: Single-Access Burst READ Operation – Fixed Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47

Figure 36: 4-Word Burst READ Operation – Fixed Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48

Figure 37: READ Burst Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49

Figure 38: Burst READ at End of Row (Wrap Off) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50

Figure 39: CE#-Controlled Asynchronous WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51

Figure 40: LB#/UB#-Controlled Asynchronous WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52

Figure 41: WE#-Controlled Asynchronous WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53

Figure 42: Asynchronous WRITE Using ADV# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54

Figure 43: Burst WRITE Operation – Variable Latency Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55

Figure 44: Burst WRITE Operation – Fixed Latency Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56

Figure 45: Burst WRITE at End of Row (Wrap Off) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57

Figure 46: Burst WRITE Followed by Burst READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58

Figure 47: Burst READ Interrupted by Burst READ or WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59

Figure 48: Burst WRITE Interrupted by Burst WRITE or READ – Variable Latency Mode . . . . . . . . . . . . . . . . . .60

Figure 49: Burst WRITE Interrupted by Burst WRITE or READ – Fixed Latency Mode . . . . . . . . . . . . . . . . . . . . .61

Figure 50: Asynchronous WRITE Followed by Burst READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62

Figure 51: Asynchronous WRITE (ADV# LOW) Followed by Burst READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63

Figure 52: Burst READ Followed by Asynchronous WRITE (WE#-Controlled) . . . . . . . . . . . . . . . . . . . . . . . . . . . .64

Figure 53: Burst READ Followed by Asynchronous WRITE Using ADV# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65

Figure 54: Asynchronous WRITE Followed by Asynchronous READ – ADV# LOW . . . . . . . . . . . . . . . . . . . . . . . .66

Figure 56: 54-Ball VFBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .68

PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65 Micron Technology, Inc., reserves the right to change products or specifications without notice.

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5

List of Tables

Table 1: VFBGA Ball Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

Table 2: Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Table 3: Sequence and Burst Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

Table 4: Drive Strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26

Table 5: Variable Latency Configuration Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28

Table 6: Fixed Latency Configuration Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29

Table 7: 128Mb Address Patterns for PAR (RCR[4] = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32

Table 8: Device Identification Register Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32

Table 9: Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33

Table 10: Electrical Characteristics and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34

Table 11: PAR Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35

Table 12: Deep Power-Down Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36

Table 13: Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36

Table 14: Asynchronous READ Cycle Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

Table 15: Burst READ Cycle Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38

Table 16: Asynchronous WRITE Cycle Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39

Table 17: Burst WRITE Cycle Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40

Table 18: Initialization and DPD Timing Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

General Description

Micron® CellularRAM™ is a high-speed, CMOS pseudo-static random access memory

developed for low-power, portable applications. The MT45W8MW16BGX device has a

128Mb DRAM core, organized as 8 Meg x 16 bits. These devices include an industry-

standard burst mode Flash interface that dramatically increases read/write bandwidth

compared with other low-power SRAM or pseudo-SRAM offerings.

To operate seamlessly on a burst Flash bus, CellularRAM products incorporate a trans-

parent self refresh mechanism. The hidden refresh requires no additional support from

the system memory controller and has no significant impact on device read/write

performance.

Two user-accessible control registers define device operation. The bus configuration

bus and is nearly identical to its counterpart on burst mode Flash devices. The refresh

configuration register (RCR) is used to control how refresh is performed on the DRAM

array. These registers are automatically loaded with default settings during power-up

and can be updated anytime during normal operation.

Special attention has been focused on standby current consumption during self refresh.

CellularRAM products include three mechanisms to minimize standby current. Partial-

array refresh (PAR) enables the system to limit refresh to only that part of the DRAM

array that contains essential data. Temperature-compensated refresh (TCR) uses an on-

chip sensor to adjust the refresh rate to match the device temperature—the refresh rate

decreases at lower temperatures to minimize current consumption during standby.

Deep power-down (DPD) enables the system to halt the refresh operation altogether

when no vital information is stored in the device. The system-configurable refresh

mechanisms are accessed through the RCR.

This CellularRAM device is compliant with the industry-standard CellularRAM 1.5

feature set established by the CellularRAM Workgroup. It includes support for both vari-

able and fixed latency, with three output-device drive-strength settings, additional wrap

options, and a device ID register (DIDR).

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 2: Functional Block Diagram – 8 Meg x 16

Notes: 1. Functional block diagrams illustrate simplified device operation. See ball descriptions

(Table 1 on page 7), bus operations table (Table 2 on page 8), and timing diagrams for

detailed information.

A[22:0]

Input/

Output

MUX

and

Buffers

Control

Logic

8,192K x 16

DRAM

Memory

Array

CE#

WE#

OE#

CLK

ADV#

CRE

WAIT

LB#

UB#

DQ[7:0]

DQ[15:8]

Refresh Configuration

Device ID Register

(DIDR)

Bus Configuration

Address Decode

Logic

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Notes: 1. The CLK and ADV# inputs can be tied to VSS if the device is always operating in asynchro-

nous or page mode. WAIT will be asserted but should be ignored during asynchronous and

page mode operations.

Table 1: VFBGA Ball Descriptions

Note 1

VFBGA Assignment Symbol Type Description

J4, E3, H6, G2, H1,

D3, E4, F4, F3, G4, G3,

H5, H4, H3, H2, D4,

C4, C3, B4, B3, A5,

A4, A3

A[22:0] Input Address inputs: Inputs for addresses during READ and WRITE operations.

Addresses are internally latched during READ and WRITE cycles. The address

lines are also used to define the value to be loaded into the BCR or the RCR.

J2 CLK Input Clock: Synchronizes the memory to the system operating frequency during

synchronous operations. When configured for synchronous operation, the

address is latched on the first rising CLK edge when ADV# is active. CLK is

static LOW during asynchronous access READ and WRITE operations and

during PAGE READ ACCESS operations.

J3 ADV# Input Address valid: Indicates that a valid address is present on the address inputs.

Addresses can be latched on the rising edge of ADV# during asynchronous

READ and WRITE operations. ADV# can be held LOW during asynchronous

READ and WRITE operations.

A6 CRE Input Control register enable: When CRE is HIGH, WRITE operations load the RCR

or BCR, and READ operations access the RCR, BCR, or DIDR.

B5 CE# Input Chip enable: Activates the device when LOW. When CE# is HIGH, the device

is disabled and goes into standby or deep power-down mode.

A2 OE# Input Output enable: Enables the output buffers when LOW. When OE# is HIGH,

the output buffers are disabled.

G5 WE# Input Write enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW,

the cycle is a WRITE to either a configuration register or to the memory

array.

A1 LB# Input Lower byte enable. DQ[7:0]

B2 UB# Input Upper byte enable. DQ[15:8]

G1, F1, F2, E2, D2, C2,

C1, B1, G6, F6, F5, E5,

D5, C6, C5, B6

DQ[15:0] Input/

Output

Data inputs/outputs.

J1 WAIT Output Wait: Provides data-valid feedback during burst READ and WRITE

operations. The signal is gated by CE#. WAIT is used to arbitrate collisions

between refresh and READ/WRITE operations. WAIT is also asserted at the

end of a row unless wrapping within the burst length. WAIT is asserted and

should be ignored during asynchronous and page mode operations. WAIT is

High-Z when CE# is HIGH.

J5, J6 RFU — Reserved for future use.

D6 VCC Supply Device power supply: (1.7–1.95V) Power supply for device core operation.

E1 VCCQ Supply I/O power supply: (1.7–3.6V) Power supply for input/output buffers.

E6 VSS Supply VSS must be connected to ground.

D1 VSSQ Supply VSSQ must be connected to ground.

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Notes: 1. CLK must be LOW during async read and async write modes; and to achieve standby power

during standby and DPD modes. CLK must be static (HIGH or LOW) during burst suspend.

2. The WAIT polarity is configured through the bus configuration register (BCR[10]).

3. When LB# and UB# are in select mode (LOW), DQ[15:0] are affected. When only LB# is in

select mode, DQ[7:0] are affected. When only UB# is in the select mode, DQ[15:8] are

affected.

4. The device will consume active power in this mode whenever addresses are changed.

5. When the device is in standby mode, address inputs and data inputs/outputs are internally

isolated from any external influence.

6. VIN = VCCQ or 0V; all device balls must be static (unswitched) in order to achieve standby cur-

rent.

7. DPD is initiated when CE# transitions from LOW to HIGH after writing RCR[4] to 0. DPD is

maintained until CE# transitions from HIGH to LOW.

8. Burst mode operation is initialized through the bus configuration register (BCR[15]).

9. Initial cycle. Following cycles are the same as BURST CONTINUE. CE# must stay LOW for the

equivalent of a single-word burst (as indicated by WAIT).

Table 2: Bus Operations

Asynchronous Mode

BCR[15] = 1 Power CLK1ADV# CE# OE# WE# CRE

LB#/

UB# WAIT2DQ[15:0]3Notes

Read Active L L L L H L L Low-Z Data-out 4

Write Active L L L X L L L Low-Z Data-in 4

Standby Standby L X H X X L X High-Z High-Z 5, 6

No operation Idle L X L X X L X Low-Z X 4, 6

Configuration register

write

Active L L L H L H X Low-Z High-Z

Configuration register

read

Active L L L L H H L Low-Z Config.

reg. out

DPD Deep

power-down

LXHXXXXHigh-ZHigh-Z 7

Burst Mode

BCR[15] = 0 Power CLK1ADV# CE# OE# WE# CRE

LB#/

UB# WAIT2DQ[15:0]3Notes

Async read Active L L L L H L L Low-Z Data-out 4

Async write Active L L L X L L L Low-Z Data-in 4

Standby Standby L X H X X L X High-Z High-Z 5, 6

No operation Idle L X L X X L X Low-Z X 4, 6

Initial burst read Active L L X H L L Low-Z X 4, 8

Initial burst write Active L L H L L X Low-Z X 4, 8

Burst continue Active H L X X X L Low-Z Data-in or

Data-out

4, 8

Burst suspend Active X X L H X X X Low-Z High-Z 4, 8

Configuration register

write

Active L L H L H X Low-Z High-Z 8, 9

Configuration register

read

Active L L L H H L Low-Z Config.

reg. out

8, 9

DPD Deep

power-down

LXHXXXXHigh-ZHigh-Z7

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Part-Numbering Information

Micron CellularRAM devices are available in several different configurations and

densities. (See Figure 3.)

Figure 3: Part Number Chart

Notes: 1. Valid part number combinations: After building the part number from the part numbering

chart above, please go to the Micron Parametric Part Search Web site at

http://www.micron.com/support/designsupport/tools/fbga/decoder to verify that the part

number is offered and valid. If the device required is not on this list, please contact the

factory.

2. Device marking: Due to the size of the package, the Micron standard part number is not

printed on the top of the device. Instead, an abbreviated device mark consisting of a five-

digit alphanumeric code is used. The abbreviated device marks are cross-referenced to the

Micron part numbers at http://www.micron.com/support/designsupport/tools/fbga/decoder.

To view the location of the abbreviated mark on the device, please refer to customer service

note CSN-11, “Product Mark/Label,” at http://www.micron.com/csn.

3. The 3.6V I/O exceeds the CellularRAM 1.5 Workgroup specification of 1.95V.

MT 45 W 8M W 16 B GX -70

Micron Technology

Product Family

45 = PSRAM/CellularRAM memory

Operating Core Voltage

W = 1.70–1.95V

Address Locations

M = Megabits

Operating Voltage

W = 1.7–3.6V

Bus Configuration

16 = x16

READ/WRITE Operation Mode

B = Asynchronous/Page/Burst

Package Codes

GX = 54-ball “green” VFBGA (6 x 9 grid, 0.75mm pitch, 8.0mm x 10.0mm x 1.0mm)

Production Status

Blank = Production

ES = Engineering sample

MS = Mechanical sample

Operating Temperature

WT = –30°C to +85°C

IT = –40°C to +85°C

Standby Power Options

Blank = Standard

L = Low power

Frequency

6 = 66 MHz

8 = 80 MHz

1 = 104 MHz

13 = 133 MHz

Access/Cycle Time

70 = 70ns

85 = 85ns

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Functional Description

In general, the MT45W8MW16BGX device is a high-density alternative to SRAM and

pseudo-SRAM products, popular in low-power, portable applications.

The MT45W8MW16BGX contains a 134,217,728-bit DRAM core, organized as 8,388,608

addresses by 16 bits. The device implements the same high-speed bus interface found

on burst mode Flash products.

The CellularRAM bus interface supports both asynchronous and burst mode transfers.

Page mode accesses are also included as a bandwidth-enhancing extension to the asyn-

chronous read protocol.

Power-Up Initialization

CellularRAM products include an on-chip voltage sensor used to launch the power-up

initialization process. Initialization will configure the BCR and the RCR with their default

settings. (See Figure 18 on page 24 and Figure 24 on page 31.) VCC and VCCQ must be

applied simultaneously. When they reach a stable level at or above 1.7V, the device will

require 150µs to complete its self-initialization process. During the initialization period,

CE# should remain HIGH. When initialization is complete, the device is ready for

normal operation.

Figure 4: Power-Up Initialization Timing

Bus Operating Modes

The MT45W8MW16BGX CellularRAM product incorporates a burst mode interface

found on Flash products targeting low-power, wireless applications. This bus interface

supports asynchronous, page mode, and burst mode read and write transfers. The

specific interface supported is defined by the value loaded into the BCR. Page mode is

controlled by the refresh configuration register (RCR[7]).

Asynchronous Mode

CellularRAM 1.5 products power up in the asynchronous operating mode. This mode

uses the industry-standard SRAM control bus (CE#, OE#, WE#, LB#/UB#). READ opera-

tions (Figure 5 on page 11) are initiated by bringing CE#, OE#, and LB#/UB# LOW while

keeping WE# HIGH. Valid data will be driven out of the I/Os after the specified access

time has elapsed. WRITE operations (see Figure 6 on page 11) occur when CE#, WE#,

and LB#/UB# are driven LOW. During asynchronous WRITE operations, the OE# level is

a “Don't Care,” and WE# will override OE#. The data to be written is latched on the rising

edge of CE#, WE#, or LB#/UB# (whichever occurs first). Asynchronous operations (page

mode disabled) can either use the ADV# input to latch the address, or ADV# can be

driven LOW during the entire READ/WRITE operation.

During asynchronous operation, the CLK input must be held static LOW. WAIT will be

driven while the device is enabled and its state should be ignored. WE# LOW time must

be limited to tCEM.

VCC

VCCQDevice initialization

VCC = 1.7V Device ready for

normal operation

tPU > 150µs

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 5: READ Operation (ADV# LOW)

Notes: 1. ADV# must remain LOW for page mode operation.

Figure 6: WRITE Operation (ADV# LOW)

Address Valid

DATA

CE#

Don’t Care

Data Valid

OE#

WE#

LB#/UB#

tRC = READ cycle time

ADDRESS

Address Valid

DATA

CE#

Don’t Care

Data Valid

OE#

WE#

LB#/UB#

tWC = WRITE cycle time

ADDRESS

< tCEM

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Page Mode READ Operation

Page mode is a performance-enhancing extension to the legacy asynchronous READ

operation. In page-mode-capable products, an initial asynchronous read access is

performed, then adjacent addresses can be read quickly by simply changing the low-

order address. Addresses A[3:0] are used to determine the members of the 16-address

CellularRAM page. Any change in addresses A[4] or higher will initiate a new tAA access

time. Figure 7 shows the timing for a page mode access. Page mode takes advantage of

the fact that adjacent addresses can be read in a shorter period of time than random

addresses. WRITE operations do not include comparable page mode functionality.

During asynchronous page mode operation, the CLK input must be held LOW. CE# must

be driven HIGH upon completion of a page mode access. WAIT will be driven while the

device is enabled and its state should be ignored. Page mode is enabled by setting

RCR[7] to HIGH. ADV# must be driven LOW during all page mode read accesses.

Due to refresh considerations, CE# must not be LOW longer than tCEM.

Figure 7: Page Mode READ Operation (ADV# LOW)

DATA

CE#

Don’t Care

OE#

WE#

LB#/UB#

ADDRESS Add 0 Add 1 Add 2 Add 3

D1 D2 D3

tAA tAPA

< tCEM

tAPA tAPA

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Burst Mode Operation

Burst mode operations enable high-speed synchronous READ and WRITE operations.

Burst operations consist of a multi-clock sequence that must be performed in an

ordered fashion. After CE# goes LOW, the address to access is latched on the rising edge

of the next clock that ADV# is LOW. During this first clock rising edge, WE# indicates

whether the operation is going to be a READ (WE# = HIGH, in Figure 8 on page 14) or

WRITE (WE# = LOW, in Figure 9 on page 14).

The size of a burst can be specified in the BCR either as a fixed length or as continuous.

Fixed-length bursts consist of four, eight, sixteen, or thirty-two words. Continuous

bursts have the ability to start at a specified address and burst to the end of the 128-word

row.

The latency count stored in the BCR defines the number of clock cycles that elapse

before the initial data value is transferred between the processor and CellularRAM

device. The initial latency for READ operations can be configured as fixed or variable

(WRITE operations always use fixed latency). Variable latency enables the CellularRAM

to be configured for minimum latency at high clock frequencies, but the controller must

monitor WAIT to detect any conflict with refresh cycles.

Fixed latency outputs the first data word after the worst-case access delay, including

allowance for refresh collisions. The initial latency time and clock speed determine the

latency count setting. Fixed latency is used when the controller cannot monitor WAIT.

Fixed latency also provides improved performance at lower clock frequencies.

The WAIT output asserts when a burst is initiated and de-asserts to indicate when data is

to be transferred into (or out of) the memory. WAIT will again be asserted at the

boundary of the 128-word row unless wrapping within the burst length.

To access other devices on the same bus without the timing penalty of the initial latency

for a new burst, burst mode can be suspended. Bursts are suspended by stopping CLK.

CLK can be stopped HIGH or LOW. If another device will use the data bus while the burst

is suspended, OE# should be taken HIGH to disable the CellularRAM outputs; otherwise,

OE# can remain LOW. Note that the WAIT output will continue to be active, and as a

result, no other devices should directly share the WAIT connection to the controller. To

continue the burst sequence, OE# is taken LOW, then CLK is restarted after valid data is

available on the bus.

The CE# LOW time is limited by refresh considerations. CE# must not stay LOW longer

than tCEM. If a burst suspension will cause CE# to remain LOW for longer than tCEM,

CE# should be taken HIGH and the burst restarted with a new CE# LOW/ADV# LOW

cycle.

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 8: Burst Mode READ (4-word burst)

Notes: 1. Non-default BCR settings for burst mode READ (4-word burst): Fixed or variable latency;

latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. The diagram

above is representative of variable latency with no refresh collision or fixed-latency access.

Figure 9: Burst Mode WRITE (4-word burst)

Notes: 1. Non-default BCR settings for burst mode WRITE (4-word burst): Fixed or variable latency;

latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.

A[22:0]

ADV#

CE#

OE#

D1 D2 D3

WE#

WAIT

DQ[15:0]

LB#/UB#

Latency Code 2 (3 clocks)

CLK

UndefinedDon’t Care

READ Burst Identified

(WE# = HIGH)

Address

Valid

A[22:0]

ADV#

CE#

OE#

D1 D2 D3

WE#

WAIT

DQ[15:0]

LB#/UB#

Address

Valid

Latency Code 2 (3 clocks)

CLK

Don’t Care

WRITE Burst Identified

(WE# = LOW)

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Mixed-Mode Operation

The device supports a combination of synchronous READ and asynchronous READ and

WRITE operations when the BCR is configured for synchronous operation. The asyn-

chronous READ and WRITE operations require that the clock (CLK) remain LOW during

the entire sequence. The ADV# signal can be used to latch the target address, or it can

remain LOW during the entire WRITE operation. CE# can remain LOW when transi-

tioning between mixed-mode operations with fixed latency enabled; however, the CE#

LOW time must not exceed tCEM. Mixed-mode operation facilitates a seamless interface

to legacy burst mode Flash memory controllers. See Figure 50 on page 62 for the “Asyn-

chronous WRITE Followed by Burst READ” timing diagram.

WAIT Operation

The WAIT output on a CellularRAM device is typically connected to a shared, system-

level WAIT signal. (See Figure 10.) The shared WAIT signal is used by the processor to

coordinate transactions with multiple memories on the synchronous bus.

Figure 10: Wired-OR WAIT Configuration

Once a READ or WRITE operation has been initiated, WAIT goes active to indicate that

the CellularRAM device requires additional time before data can be transferred. For

READ operations, WAIT will remain active until valid data is output from the device. For

WRITE operations, WAIT will indicate to the memory controller when data will be

accepted into the CellularRAM device. When WAIT transitions to an inactive state, the

data burst will progress on successive clock edges.

During a burst cycle, CE# must remain asserted until the first data is valid. Bringing CE#

high during this initial latency may cause data corruption.

When using variable initial access latency (BCR[14] = 0), the WAIT output performs an

arbitration role for READ operations launched while an on-chip refresh is in progress. If

a collision occurs, WAIT is asserted for additional clock cycles until the refresh has

completed. (See Figure 11 on page 16.) When the refresh operation has completed, the

READ operation will continue normally.

WAIT will be asserted but should be ignored during asynchronous READ, WRITE, and

page READ operations.

By using fixed initial latency (BCR[14] = 1), this CellularRAM device can be used in burst

mode without monitoring the WAIT signal. However, WAIT can still be used to deter-

mine when valid data is available at the start of the burst and at the end of the row. If

WAIT is not monitored, the controller must stop burst accesses at row boundaries on its

own.

CellularRAM

External

pull-up/

pull-down

resistor

Processor

READY

Other

device

WAIT

Other

device

WAIT

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

LB#/UB# Operation

The LB# enable and UB# enable signals support byte-wide data WRITEs. During WRITE

operations, any disabled bytes will not be transferred to the RAM array and the internal

value will remain unchanged. During an asynchronous WRITE cycle, the data to be

written is latched on the rising edge of CE#, WE#, LB#, or UB#, whichever occurs first.

LB# and UB# must be LOW during READ cycles.

When both the LB# and UB# are disabled (HIGH) during an operation, the device will

disable the data bus from receiving or transmitting data. Although the device will seem

to be deselected, it remains in an active mode as long as CE# remains LOW.

Figure 11: Refresh Collision During Variable-Latency READ Operation

Notes: 1. Non-default BCR settings for refresh collision during variable-latency READ operation:

Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.

A[22:0]

ADV#

CE#

OE#

WE#

WAIT

DQ[15:0]

CLK VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

VOH

VOL

D2D1 D3

Valid

Address

Additional WAIT states inserted to allow refresh completion.

LB#/UB#

Undefined Don’t Care

High-Z

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Low-Power Operation

Standby Mode

During standby, the device current consumption is reduced to the level necessary to

perform the DRAM refresh operation. Standby operation occurs when CE# is HIGH.

The device will enter a reduced power state upon completion of a READ or WRITE oper-

ation, or when the address and control inputs remain static for an extended period of

time. This mode will continue until a change occurs to the address or control inputs.

Temperature-Compensated Refresh (TCR)

TCR allows for adequate refresh at different temperatures. This CellularRAM device

includes an on-chip temperature sensor that automatically adjusts the refresh rate

according to the operating temperature. The device continually adjusts the refresh rate

to match that temperature.

Partial-Array Refresh (PAR)

PAR restricts refresh operation to a portion of the total memory array. This feature

enables the device to reduce standby current by refreshing only that part of the memory

array required by the host system. The refresh options are full array, one-half array, one-

quarter array, one-eighth array, or none of the array. The mapping of these partitions can

start at either the beginning or the end of the address map. (See Table 7 on page 32.)

READ and WRITE operations to address ranges receiving refresh will not be affected.

Data stored in addresses not receiving refresh will become corrupted. When re-enabling

additional portions of the array, the new portions are available immediately upon

writing to the RCR.

Deep Power-Down Mode (DPD)

DPD mode disables all refresh-related activity. This mode is used if the system does not

require the storage provided by the CellularRAM device. Any stored data will become

corrupted when DPD is enabled. When refresh activity has been re-enabled, the Cellu-

larRAM device will require 150µs to perform an initialization procedure before normal

operations can resume. During this 150µs period, the current consumption will be

higher than the specified standby levels, but considerably lower than the active current

specification.

DPD can be enabled by writing to the RCR using CRE or the software access sequence;

DPD starts when CE# goes HIGH. DPD is disabled the next time CE# goes LOW and stays

LOW for at least 10µs.

Registers

Two user-accessible configuration registers define the device operation. The BCR defines

how the CellularRAM interacts with the system memory bus and is nearly identical to its

counterpart on burst mode Flash devices. The RCR is used to control how refresh is

performed on the DRAM array. These registers are automatically loaded with default

settings during power-up, and can be updated any time the devices are operating in a

standby state.

A DIDR provides information on the device manufacturer, CellularRAM generation, and

the specific device configuration. The DIDR is read-only.

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Access Using CRE

The registers can be accessed using either a synchronous or an asynchronous operation

when the control register enable (CRE) input is HIGH. (See Figures 12 through 15 on

pages 18 through 21.) When CRE is LOW, a READ or WRITE operation will access the

memory array. The configuration register values are written via addresses A[22:0]. In an

asynchronous WRITE, the values are latched into the configuration register on the rising

edge of ADV#, CE#, or WE#, whichever occurs first; LB# and UB# are “Don’t Care.” The

BCR is accessed when A[19:18] are 10b; the RCR is accessed when A[19:18] are 00b. The

DIDR is read when A[19:18] are 01b. For reads, address inputs other than A[19:18] are

“Don’t Care,” and register bits 15:0 are output on DQ[15:0]. Micron strongly recommends

reading the memory array immediately after performing a configuration register READ

or WRITE operation.

Figure 12: Configuration Register WRITE, Asynchronous Mode, Followed by READ ARRAY

Operation

Notes: 1. A[19:18] = 00b to load RCR, and 10b to load BCR.

A[22:0]

(except A[19:18]) OPCODE Address

Address

Data Valid

A[19:18]1

ADV#

CE#

OE#

WE#

LB#/UB#

DQ[15:0]

Initiate Control Register Access

Write Address Bus Value

to Control Register

CRE

tAVS tAVH

tAVH

tAVS

tVP tCPH

tWP

tCW

Don’t Care

Select Control Register

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Figure 13: Configuration Register WRITE, Synchronous Mode Followed by READ ARRAY Operation

Notes: 1. Non-default BCR settings for synchronous mode configuration register WRITE followed by

READ ARRAY operation: Latency code two (three clocks); WAIT active LOW; WAIT asserted

during delay.

2. A[19:18] = 00b to load RCR, and 10b to load BCR.

3. CE# must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—addi-

tional WAIT cycles caused by refresh collisions require a corresponding number of addi-

tional CE# LOW cycles.

CLK

A[22:0]

(except A[19:18])

A[19:18]2

CRE

ADV#

CE#

OE#

WE#

LB#/UB#

WAIT

DQ[15:0]

tSP

tHD

tCSP

tSP

tHD

High-Z

Don’t Care

OPCODE Address

High-Z

tCEW

Latch Control Register Address

tCBPH3

Data

Valid

Address

Latch Control Register Value

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Figure 14: Register READ, Asynchronous Mode Followed by READ ARRAY Operation

Notes: 1. A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR.

A[22:0]

(except A[19:18]) Address

Address

Data Valid

CR Valid

A[19:18]1

ADV#

CE#

OE#

WE#

LB#/UB#

DQ[15:0]

Initiate Register Access

CRE

tAVH

tAVS

tAA

tVP

tCPH

tCO

tOLZ

tBA

tLZ

tOE

tLZ

UndefinedDon’t Care

Select Register

tAAVD

tAVS

tAA

tHZ

tOHZ

tBHZ

tAVH

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Figure 15: Register READ, Synchronous Mode Followed by READ ARRAY Operation

Notes: 1. Non-default BCR settings for synchronous mode register READ followed by READ ARRAY

operation: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.

2. A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR.

3. CE# must remain LOW to complete a burst-of-one READ. WAIT must be monitored—addi-

tional WAIT cycles caused by refresh collisions require a corresponding number of addi-

tional CE# LOW cycles.

CLK

A[22:0]

(except A[19:18])

A[19:18]2

CRE

ADV#

CE#

OE#

WE#

LB#/UB#

WAIT

DQ[15:0]

tSP

tHD

tHZ

tCSP

tKOH

Undefined

Don’t Care

tSP tHD

Address

tCEW

Latch Control Register Value

tOLZ

Latch Control Register Address

tCBPH3

tBOE

Data

Valid

Address

tACLK

tOHZ

High-Z

tABA

Valid

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Software Access

Software access of the registers uses a sequence of asynchronous READ and asynchro-

nous WRITE operations. The contents of the configuration registers can be modified and

all registers can be read using the software sequence.

The configuration registers are loaded using a four-step sequence consisting of two

asynchronous READ operations followed by two asynchronous WRITE operations. (See

Figure 16.) The read sequence is virtually identical except that an asynchronous READ is

performed during the fourth operation. (See Figure 17 on page 23.) The address used

during all READ and WRITE operations is the highest address of the CellularRAM device

being accessed (7FFFFFh for 128Mb); the contents of this address are not changed by

using this sequence.

The data value presented during the third operation (WRITE) in the sequence defines

whether the BCR, RCR, or the DIDR is to be accessed. If the data is 0000h, the sequence

will access the RCR; if the data is 0001h, the sequence will access the BCR; if the data is

0002h, the sequence will access the DIDR. During the fourth operation, DQ[15:0]

transfer data in to or out of bits 15–0 of the registers.

The use of the software sequence does not affect the ability to perform the standard

(CRE-controlled) method of loading the configuration registers. However, the software

nature of this access mechanism eliminates the need for CRE. If the software mecha-

nism is used, CRE can simply be tied to VSS. The port line often used for CRE control

purposes is no longer required.

Figure 16: Load Configuration Register

Notes: 1. It is possible that the data stored at the highest memory location will be altered if the

data at the falling edge of WE# is not 0000h or 0001h.

Address

(MAX) Address

(MAX)

XXXXh XXXXh

RCR: 0000h

BCR: 0001h

CR Value

DDRESS

CE#

OE#

WE#

LB#/UB#

DATA

Don’t Care

READ READ WRITE WRITE

0ns (min) Note 1

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Figure 17: Read Configuration Register

Notes: 1. It is possible that the data stored at the highest memory location will be altered if the

data at the falling edge of WE# is not 0000h, 0001h, or 0002h.

Address

(MAX) Address

(MAX)

XXXXh XXXXh CR Value

Out

ADDRESS

CE#

OE#

WE#

LB#/UB#

DATA

Don't Care

READ

WRITE

READ

RCR: 0000h

BCR: 0001h

DIDR:

000

0ns (min) Note 1

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Bus Configuration Register (BCR)

The BCR defines how the CellularRAM device interacts with the system memory bus.

Page mode operation is enabled by a bit contained in the RCR. Figure 18 describes the

control bits in the BCR. At power-up, the BCR is set to 9D1Fh.

The BCR is accessed with CRE HIGH and A[19:18] = 10b or through the register access

software sequence with DQ = 0001h on the third cycle.

Figure 18: Bus Configuration Register Definition

Notes: 1. Burst wrap and length apply to both READ and WRITE operations.

A13

13 12 11 0

Latency

Counter

Initial

Latency

3 2 1

WAIT

Polarity

WAIT

Configuration (WC)

Drive Strength Burst

Wrap (BW)

A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2

A1 A0

Operating Mode

Synchronous burst access mode

Asynchronous access mode (default)

BCR[12] BCR[11]

Latency Counter

BCR[13]

Code 8

Code 1–Reserved

Code 2

Code 3 (Default)

Code 4

Code 5

Code 6

Code 7–Reserved

WAIT Polarity

Active LOW

Active HIGH (default)

BCR[10]

WAIT Configuration

Asserted during delay

Asserted one data cycle before delay (default)

Drive Strength

Full

1/2 (default)

1/4

Reserved

BCR[5]

BCR[4]

Initial Access Latency

Variable (default)

Fixed

BCR[14]

Burst Wrap (Note 1)

Burst wraps within the burst length

Burst no wrap (default)

BCR[3]

BCR[1] BCR[0] Burst Length (Note 1)

BCR[2]

Burst

Length (BL)

Reserved Reserved

Operating

Mode

Reserved

22–20

A14 A15

A[17:16]

Select RCR

Select BCR

Select DIDR

19–18 17–16

Select

Reserved

[

19:18

]

[

22:20

]

Reserved

Must be set to “0”

Must be set to “0”Must be set to “0”

All must be set to “0”

BCR[8]

BCR[15]

BCR[19]

BCR[18]

Others

4 words

8 words

16 words

32 words

Continuous burst (default)

Reserved

Setting is ignored

(Default to “0”)

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Burst Length (BCR[2:0]) Default = Continuous Burst

Burst lengths define the number of words the device outputs during burst READ and

WRITE operations. The device supports a burst length of 4, 8, 16, or 32 words. The device

can also be set in continuous burst mode where data is accessed sequentially up to the

end of the row.

Burst Wrap (BCR[3]) Default = No Wrap

The burst-wrap option determines if a 4-, 8-, 16-, or 32-word READ or WRITE burst

wraps within the burst length or steps through sequential addresses. If the wrap option

is not enabled, the device accesses data from sequential addresses up to the end of the

row.

Tabl e 3: Sequence and Burst Length

Burst

Wrap

Starting

Address

4-Word

Burst

Length

8-Word

Burst Length

16-Word

Burst Length

32-Word

Burst Length

Continuous

Burst

BCR

[3] Wrap (Decimal) Linear Linear Linear Linear Linear

0Yes

0 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7-8-9-10-11-12-

13-14-15

0-1-2-...-29-30-

0-1-2-3-4-5-6-…

1 1-2-3-0 1-2-3-4-5-6-7-0 1-2-3-4-5-6-7-8-9-10-11-12-13-

14-15-0

1-2-3-...-30-31-0 1-2-3-4-5-6-7-…

2 2-3-0-1 2-3-4-5-6-7-0-1 2-3-4-5-6-7-8-9-10-11-12-13-

14-15-0-1

2-3-4-...-31-0-1 2-3-4-5-6-7-8-…

3 3-0-1-2 3-4-5-6-7-0-1-2 3-4-5-6-7-8-9-10-11-12-13-14-

15-0-1-2

3-4-5-...-0-1-2 3-4-5-6-7-8-9-…

4 4-5-6-7-0-1-2-3 4-5-6-7-8-9-10-11-12-13-14-15-

0-1-2-3

4-5-6-...-1-2-3 4-5-6-7-8-9-10-…

5 5-6-7-0-1-2-3-4 5-6-7-8-9-10-11-12-13-14-15-0-

1-2-3-4

5-6-7-...-2-3-4 5-6-7-8-9-10-11-…

6 6-7-0-1-2-3-4-5 6-7-8-9-10-11-12-13-14-15-0-1-

2-3-4-5

6-7-8-...-3-4-5 6-7-8-9-10-11-12-

7 7-0-1-2-3-4-5-6 7-8-9-10-11-12-13-14-15-0-1-2-

3-4-5-6

7-8-9-...-4-5-6 7-8-9-10-11-12-13-

…

... ... ... ...

14 14-15-0-1-2-3-4-5-6-7-8-9-10-

11-12-13

14-15-16-...-11-

12-13

14-15-16-17-18-19-

20-...

15 15-0-1-2-3-4-5-6-7-8-9-10-11-

12-13-14

15-16-17-...-12-

13-14

15-16-17-18-19-20-

21-...

... ... ...

30 30-31-0-...-27-

28-29

30-31-32-33-34-...

31 31-0-1-...-28-29-

31-32-33-34-35-...

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Drive Strength (BCR[5:4]) Default = Outputs Use Half-Drive Strength

The output driver strength can be altered to full, one-half, or one-quarter strength to

adjust for different data bus loading scenarios. The reduced-strength options are

intended for stacked chip (Flash + CellularRAM) environments when there is a dedicated

memory bus. The reduced-drive-strength option minimizes the noise generated on the

data bus during READ operations. Full output drive strength should be selected when

using a discrete CellularRAM device in a more heavily loaded data bus environment.

Outputs are configured at half-drive strength during testing. See Table 4 for additional

information.

1No

0 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7-8-9-10-11-12-

13-14-15

0-1-2...--29-30-

0-1-2-3-4-5-6-…

1 1-2-3-4 1-2-3-4-5-6-7-8 1-2-3-4-5-6-7-8-9-10-11-12-13-

14-15-16

1-2-3-...-30-31-

1-2-3-4-5-6-7-…

2 2-3-4-5 2-3-4-5-6-7-8-9 2-3-4-5-6-7-8-9-10-11-12-13-

14-15-16-17

2-3-4-...-31-32-

2-3-4-5-6-7-8-…

3 3-4-5-6 3-4-5-6-7-8-9-10 3-4-5-6-7-8-9-10-11-12-13-14-

15-16-17-18

3-4-5-...-32-33-

3-4-5-6-7-8-9-…

4 4-5-6-7-8-9-10-

4-5-6-7-8-9-10-11-12-13-14-15-

16-17-18-19

4-5-6-...-33-34-

4-5-6-7-8-9-10-…

5 5-6-7-8-9-10-11-

5-6-7-8-9-10-11-12-13-...-15-

16-17-18-19-20

5-6-7-...-34-35-

5-6-7-8-9-10-11…

6 6-7-8-9-10-11-

12-13

6-7-8-9-10-11-12-13-14-...-16-

17-18-19-20-21

6-7-8-...-35-36-

6-7-8-9-10-11-12…

7 7-8-9-10-11-12-

13-14

7-8-9-10-11-12-13-14-...-17-18-

19-20-21-22

7-8-9-...-36-37-

7-8-9-10-11-12-

13…

... ... ... ...

14 14-15-16-17-18-19-...-23-24-

25-26-27-28-29

14-15-16-...-43-

44-45

14-15-16-17-18-19-

20-…

15 15-16-17-18-19-20-...-24-25-

26-27-28-29-30

15-16-17-...-44-

45-46

15-16-17-18-19-20-

21-…

... ... ...

30 30-31-32-...-59-

60-61

30-31-32-33-34-35-

36-...

31 31-32-33-...-60-

61-62

31-32-33-34-35-36-

37-...

Table 4: Drive Strength

BCR[5] BCR[4] Drive Strength Impedance Typ (Ω)Use Recommendation

0 0 Full 25–30 CL = 30pF to 50pF

01 1/2

(default)

50 CL = 15pF to 30pF

104 MHz at light load

1 0 1/4 100 CL = 15pF or lower

1 1 Reserved

Tabl e 3: Sequence and Burst Length (Continued)

Burst

Wrap

Starting

Address

4-Word

Burst

Length

8-Word

Burst Length

16-Word

Burst Length

32-Word

Burst Length

Continuous

Burst

BCR

[3] Wrap (Decimal) Linear Linear Linear Linear Linear

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WAIT Configuration (BCR[8]) Default = WAIT Transitions One Clock Before Data Valid/Invalid

The WAIT configuration bit is used to determine when WAIT transitions between the

asserted and the de-asserted state with respect to valid data presented on the data bus.

The memory controller will use the WAIT signal to coordinate data transfer during

synchronous READ and WRITE operations. When BCR[8] = 0, data will be valid or invalid

on the clock edge immediately after WAIT transitions to the de-asserted or asserted

state, respectively. (See Figures 19 and 21.) When BCR[8] = 1, the WAIT signal transitions

one clock period prior to the data bus going valid or invalid. (See Figures 20 and 21.)

WAIT Polarity (BCR[10]) Default = WAIT Active HIGH

The WAIT polarity bit indicates whether an asserted WAIT output should be HIGH or

LOW. This bit will determine whether the WAIT signal requires a pull-up or pull-down

resistor to maintain the de-asserted state.

Figure 19: WAIT Configuration (BCR[8] = 0)

Notes: 1. Data valid/invalid immediately after WAIT transitions (BCR[8] = 0). (See Figure 21.)

Figure 20: WAIT Configuration (BCR[8] = 1)

Notes: 1. Valid/invalid data delayed for one clock after WAIT transitions (BCR[8] = 1). (See Figure 21.)

WAIT

DQ[15:0]

CLK

Data 0 Data 1

Data immediately valid (or invalid)

High-Z

WAIT

DQ[15:0]

CLK

Data 0

Data valid (or invalid) after one clock delay

High-Z

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Figure 21: WAIT Configuration During Burst Operation

Notes: 1. Non-default BCR setting: WAIT active LOW.

Latency Counter (BCR[13:11]) Default = Three Clock Latency

The latency counter bits determine how many clocks occur between the beginning of a

READ or WRITE operation and the first data value transferred. For allowable latency

codes, see Table 5, Figure 22 on page 29, Table 6 on page 29, and Figure 23 on page 30.

Initial Access Latency (BCR[14]) Default = Variable

Variable initial access latency outputs data after the number of clocks set by the latency

counter. However, WAIT must be monitored to detect delays caused by collisions with

refresh operations.

Fixed initial access latency outputs the first data at a consistent time that allows for

worst-case refresh collisions. The latency counter must be configured to match the

initial latency and the clock frequency. It is not necessary to monitor WAIT with fixed

initial latency. The burst begins after the number of clock cycles configured by the

latency counter. (See Table 6 and Figure 23.)

Notes: 1. Latency is the number of clock cycles from the initiation of a burst operation until data

appears. Data is transferred on the next clock cycle.

Table 5: Variable Latency Configuration Codes

BCR[13:11] Latency Configuration Code

Latency1Max Input CLK Frequency (MHz)

Normal

Refresh

Collision -7013 -701 -708 -856

010 2 (3 clocks) 2 4 66 (15.0ns) 66 (15ns) 52 (19.2ns) 40 (25ns)

011 3 (4 clocks)—default 3 6 104 (9.62ns) 104 (9.62ns) 80 (12.5ns) 66 (15ns)

100 4 (5 clocks) 4 8 133 (7.5ns) — — —

Others Reserved —— — — ——

WAIT

DQ[15:0]

CLK

BCR[8] = 0

Data valid in current cycle.

BCR[8] = 1

Data valid in next cycle.

Don’t Care

D1 D2 D3

End of row

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Figure 22: Latency Counter (Variable Initial Latency, No Refresh Collision)

Table 6: Fixed Latency Configuration Codes

BCR[13:11] Latency Configuration Code Latency Count (N)

Max Input CLK Frequency (MHz)

-7013 -701 -708 -856

010 2 (3 clocks) 2 33 (30ns) 33 (30ns) 33 (30ns) 20 (50ns)

011 3 (4 clocks)—default 3 52 (19.2ns) 52 (19.2ns) 52 (19.2ns) 33 (30ns)

100 4 (5 clocks) 4 66 (15ns) 66 (15ns) 66 (15ns) 40 (25ns)

101 5 (6 clocks) 5 75 (13.3ns) 75 (13.3ns) 75 (13.3ns) 52 (19.2ns)

110 6 (7 clocks) 6 104 (9.62ns)

104 (9.62ns) 80 (12.5ns) 66 (15ns)

000 8 (9 clocks) 8133 (7.5ns)

Others Reserved —————

A[22:0]

ADV#

DQ[15:0]

CLK

Code 2

Valid Output Valid Output Valid OutputValid OutputValid Output

Valid Output Valid OutputValid OutputValid Output

Code 3 (Default)

DQ[15:0]

Don’t Care Undefined

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

VOH

VOL

Valid Address

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Figure 23: Latency Counter (Fixed Latency)

Operating Mode (BCR[15]) Default = Asynchronous Operation

The operating mode bit selects either synchronous burst operation or the default asyn-

chronous mode of operation.

A[22:0]

ADV#

DQ[15:0]

(READ)

CLK

Valid Output Valid Output Valid OutputValid OutputValid Output

Don’t Care Undefined

VIH

VIL

VIH

VIL

VIH

VIL

CE# VIH

VIL

VOH

VOL

tAADV

tAA

tCO

tACLK

tSP tHD

DQ[15:0]

(WRITE)

VOH

VOL

N-1

Cycles Cycle N

Valid Input Valid Input Valid Input Valid Input Valid Input

Burst Identified

(ADV# = LOW)

Valid Address

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Refresh Configuration Register (RCR)

The RCR defines how the CellularRAM device performs its transparent self refresh.

Altering the refresh parameters can dramatically reduce current consumption during

standby mode. Page mode control is also embedded into the RCR. Figure 24 describes

the control bits used in the RCR. At power-up, the RCR is set to 0010h.

The RCR is accessed with CRE HIGH and A[19:18] = 00b or through the register access

software sequence with DQ = 0000h on the third cycle. (See “Registers” on page 17.)

PAR (RCR[2:0]) Default = Full Array Refresh

The PAR bits restrict refresh operation to a portion of the total memory array. This

feature allows the device to reduce standby current by refreshing only that part of the

memory array required by the host system. The refresh options are full array, one-half

array, one-quarter array, one-eighth array, or none of the array. The mapping of these

partitions can start at either the beginning or the end of the address map. (See Table 12

on page 36.)

Figure 24: Refresh Configuration Register Mapping

PAR

A4 A3 A2 A1 A0 Address Bus

45 1

Deep Power-Down

DPD enable

DPD disable (default)

RCR[4]

All must be set to “0”

A[17:8]

17–8

19–18

22–20

Select

Reserved Reserved ReservedReserved

A[22:20] A[19:18]

Select RCR

Select BCR

Select DIDR

RCR[19]

All must be set to “0”

RCR[1]

RCR[0]

Refresh Coverage

Full array (default)

Bottom 1/2 array

Bottom 1/4 array

Bottom 1/8 array

RCR[2]

None of array

Top 1/2 array

Top 1/4 array

Top 1/8 array

DPD

Must be set to “0”Setting is ignored

(Default 00b)

Page

Page Mode Enable/Disable

Page mode disabled (default)

Page mode enable

RCR[7]

RCR[18]

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DPD (RCR[4]) Default = DPD Disabled

The deep power-down bit enables and disables all refresh-related activity. This mode is

used if the system does not require the storage provided by the CellularRAM device. Any

stored data will become corrupted when DPD is enabled. When refresh activity has been

re-enabled, the CellularRAM device will require 150µs to perform an initialization proce-

dure before normal operations can resume.

Deep power-down is enabled by setting RCR[4] = 0 and taking CE# HIGH. DPD can be

enabled using CRE or the software sequence to access the RCR. Taking CE# LOW for at

least 10µs disables DPD and sets RCR[4] = 1; it is not necessary to write to the RCR to disable

DPD. BCR and RCR values (other than BCR[4]) are preserved during DPD.

Page Mode Operation (RCR[7]) Default = Disabled

The page mode operation bit determines whether page mode is enabled for asynchro-

nous READ operations. In the power-up default state, page mode is disabled.

Device Identification Register (DIDR)

The DIDR provides information on the device manufacturer, CellularRAM generation,

and the specific device configuration. Table 8 describes the bit fields in the DIDR. This

The DIDR is accessed with CRE HIGH and A[19:18] = 01b, or through the register access

software sequence with DQ = 0002h on the third cycle.

Notes: 1. Vendors with 256-word row lengths for CellularRAM 1.5 devices will set DIDR[15] to 1b.

Table 7: 128Mb Address Patterns for PAR (RCR[4] = 1)

RCR[2] RCR[1] RCR[0] Active Section Address Space Size Density

0 0 0 Full die 000000h–7FFFFFh 8 Meg x 16 128Mb

0 0 1 One-half of die 000000h–3FFFFFh 4 Meg x 16 64Mb

0 1 0 One-quarter of die 000000h–1FFFFFh 2 Meg x 16 32Mb

0 1 1 One-eighth of die 000000h–0FFFFFh 1 Meg x 16 16Mb

1 0 0 None of die 0 0 Meg x 16 0Mb

1 0 1 One-half of die 400000h–7FFFFFh 4 Meg x 16 64Mb

1 1 0 One-quarter of die 600000h–7FFFFFh 2 Meg x 16 32Mb

1 1 1 One-eighth of die 700000h–7FFFFFh 1 Meg x 16 16Mb

Table 8: Device Identification Register Mapping

Bit Field DIDR[15] DIDR[14:11] DIDR[10:8] DIDR[7:5] DIDR[4:0]

Field name

Row length Device version Device density CellularRAM

generation

Vendor ID

Bit setting 0b Bit setting Version 011b 010b 00011b

0000b 1st

0001b 2nd

0010b 3rd

(etc.) (etc.)

Meaning 128 words 128Mb CellularRAM 1.5 Micron

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Electrical Specifications

Notes: 1. The 4.0V maximum VCCQ voltage exceeds the 2.45V CellularRAM 1.5 Workgroup

specification.

Stresses greater than those listed may cause permanent damage to the device. This is a

stress rating only, and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reli-

ability.

Table 9: Absolute Maximum Ratings

Parameter Rating

Voltage to any ball except VCC, VCCQ relative to VSS –0.5V to (4.0V or VCCQ + 0.3V, whichever is less)

Voltage on VCC supply relative to VSS –0.2V to +2.45V

Voltage on VCCQ supply relative to VSS –0.2V to +4.0V1

Storage temperature (plastic) –55ºC to +150ºC

Operating temperature (case)

Wireless –30ºC to +85ºC

Industrial –40ºC to +85ºC

Soldering temperature and time

10s (solder ball only) +260ºC

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Notes: 1. The 3.6V I/O exceeds the CellularRAM 1.5 Workgroup specification of 1.95V.

2. Input signals may overshoot to VCCQ + 1.0V for periods less than 2ns during transitions.

3. Input signals may undershoot to VSS - 1.0V for periods less than 2ns during transitions.

4. BCR[5:4] = 01b (default setting of one-half drive strength).

5. This parameter is specified with the outputs disabled to avoid external loading effects.

The user must add the current required to drive output capacitance expected in the actual

system.

6. Micron devices are fully compatible with the CellularRAM Workgroup specification for

ICC1P: –70 max of 18; –85 max of 15.

7. ISB (MAX) values measured with PAR set to FULL ARRAY and at +85°C. In order to achieve

low standby current, all inputs must be driven to either VCCQ or VSS. ISB might be slightly

higher for up to 500ms after power-up or when entering standby mode.

8. ISB (TYP) is the average ISB at 25°C and VCC = VCCQ = 1.8V. This parameter is verified during

characterization and is not 100-percent tested.

9. ICC1P specifications are less than the CR1.5 limits of 18mA and 15mA.

Table 10: Electrical Characteristics and Operating Conditions

Wireless temperature (–30ºC < TC < +85ºC); Industrial temperature (–40ºC < TC < +85ºC)

Description Conditions Symbol Min Max Unit Notes

Supply voltage VCC 1.7 1.95 V

I/O supply voltage VCCQ 1.7 3.6V V 1

Input high voltage VIH VCCQ - 0.4 VCCQ + 0.2 V 2

Input low voltage VIL –0.2 0.4 V 3

Output high voltage IOH = –0.2mA VOH 0.8 VCCQV4

Output low voltage IOL = +0.2mA VOL 0.2 VCCQV 4

Input leakage current VIN = 0 to VCCQILI 1µA

Output leakage current OE# = VIH or

chip disabled

ILO 1µA

Operating Current Conditions Symbol Typ Max Unit Notes

Asynchronous random

READ/WRITE

VIN = VCCQ or 0V

chip enabled,

IOUT = 0

ICC1 –70 25 mA 5

–85 22

Asynchronous PAGE

READ

ICC1P –70 15 mA 5, 6, 9

–85 12

Initial access, burst

READ/WRITE

ICC2133 MHz 45 mA 5

104 MHz 35

80 MHz 30

66 MHz 25

Continuous burst READ ICC3R 133 MHz 40 mA 5

104 MHz 30

80 MHz 25

66 MHz 20

Continuous burst WRITE ICC3W 133 MHz 40 mA 5

104 MHz 35

80 MHz 30

66 MHz 25

Standby current VIN = VCCQ or 0V

CE# = VCCQ

ISB Standard 50 200 µA 7, 8

Low-power

(L)

160

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Notes: 1. IPAR (MAX) values measured at 85°C. In order to achieve low standby current, all inputs

must be driven to either VCCQ or VSS. IPAR might be slightly higher for up to 500ms after

power-up or when entering standby mode.

Figure 25: Typical Refresh Current vs. Temperature (ITCR)

Table 11: PAR Specifications and Conditions

Description Conditions Symbol

Array

Partition Max Units

Partial-array refresh standby

current

VIN = VCCQ or 0V,

CE# = VCCQ

IPAR Standard power

(no designation)

Full 200 µA

1/2 170

1/4 155

1/8 150

0 140

Low-power option

(L)

Full 160 µA

1/2 130

1/4 115

1/8 110

0 100

–30 –20 –10 0 10 20 30 40 50 60 70 80 90

Typical Current

Temperature (°C)

PAR = Full array

PAR = 1/2 of array

PAR = 1/4 of array

PAR = 1/8 of array

PAR = None of array

140

130

120

110

100

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Figure 26: AC Input/Output Reference Waveform

Notes: 1. AC test inputs are driven at VCCQ for a logic 1 and VSSQ for a logic 0. Input rise and fall

times (10 percent to 90 percent) <1.6ns.

2. Input timing begins at VCCQ/2.

3. Output timing ends at VCCQ/2.

Figure 27: AC Output Load Circuit

Notes: 1. All tests are performed with the outputs configured for default setting of half drive

strength (BCR[5:4] = 01b).

Table 12: Deep Power-Down Specifications

Typical (TYP) IZZ value applies across all operating temperatures and voltages

Description Conditions Symbol Typ Max Unit

Deep Power-Down VIN = VCCQ or 0V;

VCC, VCCQ = 1.95V; +85°C

IZZ 310µA

Table 13: Capacitance

These parameters are verified in device characterization and are not 100-percent tested

Description Conditions Symbol Min Max Units

Input Capacitance TC = +25ºC; f = 1 MHz;

VIN = 0V

CIN 2.0 6 pF

Input/Output Capacitance

(DQ)

CIO 3.5 6 pF

Output

Test Points

Input

VCCQ

VSSQ

VCCQ/2

VCC

Q/2

DUT

VccQ/2

30pF

Test Point

50Ω

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Timing Requirements

Notes: 1. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 36. The

High-Z timings measure a 100mV transition from either VOH or VOL toward VCCQ/2.

2. High-Z to Low-Z timings are tested with the circuit shown in Figure 27 on page 36. The Low-

Z timings measure a 100mV transition away from the High-Z (VCCQ/2) level toward either

VOH or VOL.

3. Page mode enabled only.

Table 14: Asynchronous READ Cycle Timing Requirements

All tests performed with outputs configured for default setting of one-half drive strength, (BCR[5:4] = 01b)

Parameter Symbol

70ns 85ns

Unit NotesMin Max Min Max

Address access time tAA 70 85 ns

ADV# access time tAADV 70 85 ns

Page access time tAPA 20 25 ns

Address hold from ADV# HIGH tAVH 22ns

Address setup to ADV# HIGH tAVS 55ns

LB#/UB# access time tBA 70 85 ns

LB#/UB# disable to DQ High-Z output tBHZ 88ns1

LB#/UB# enable to Low-Z output tBLZ 10 10 ns 2

Maximum CE# pulse width tCEM 44µs3

CE# LOW to WAIT valid tCEW 17.517.5ns

Chip select access time tCO 70 85 ns

CE# LOW to ADV# HIGH tCVS 77ns

Chip disable to DQ and WAIT High-Z output tHZ 88ns1

Chip enable to Low-Z output tLZ 10 10 ns 2

Output enable to valid output tOE 20 20 ns

Output hold from address change tOH 55ns

Output disable to DQ High-Z output tOHZ 88ns1

Output enable to Low-Z output tOLZ 33ns2

Page READ cycle time tPC 20 25 ns

READ cycle time tRC 70 85 ns

ADV# pulse width LOW tVP 57ns

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Notes: 1. Values are valid for tCLK (MIN) with no refresh collision: LC= 4 for -7013; LC = 3 for -701,

-708, and -856.

2. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by

either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than

15ns.

3. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 36. The

High-Z timings measure a 100mV transition from either VOH or VOL toward VCCQ/2.

4. High-Z to Low-Z timings are tested with the circuit shown in Figure 27 on page 36. The

Low-Z timings measure a 100mV transition away from the High-Z (VCCQ/2) level toward

either VOH or VOL.

Table 15: Burst READ Cycle Timing Requirements

All tests performed with outputs configured for default setting of one-half drive strength (BCR[5:4] = 01b).

Parameter Symbol

-7013

(133 MHz)

-701

(104 MHz)

-708

(80 MHz)

-856

(66 MHz)

Unit NotesMin Max Min Max Min Max Min Max

Address access time (fixed latency) tAA 70 70 70 85 ns

ADV# access time (fixed latency) tAADV 70 70 70 85 ns

Burst to READ access time (variable latency) tABA 35.5 35.9 46.5 55 ns 1

CLK to

output delay

Variable LC = 4

Fixed LC = 8

tACLK 5.5 7 9 11 ns

All other LCs 77911ns

Address hold from ADV# HIGH (fixed

latency)

tAVH 2222 ns

Burst OE# LOW to output delay tBOE 20 20 20 20 ns

CE# HIGH between subsequent burst or

mixed-mode operations

tCBPH 55 68 ns 2

Maximum CE# pulse width tCEM 444 4µs2

CE# LOW to WAIT valid tCEW 1 7.5 1 7.5 1 7.5 1 7.5 ns

CLK period tCLK 7.5 9.62 12.5 15 ns

Chip select access time (fixed latency) tCO 70 70 70 85 ns

CE# setup time to active CLK edge tCSP 2.5 3 4 5 ns

Hold time from active CLK Edge tHD 1.5 2 2 2 ns

Chip disable to DQ and WAIT High-Z output tHZ 78 8 8ns 4

CLK rise or fall time tKHKL 1.2 1.6 1.8 2.0 ns

CLK to WAIT

valid

Variable LC = 4

Fixed LC = 8 tKHTL

5.5 7 9 11 ns

All other LCs 77911ns

Output hold from CLK tKOH 22 22 ns

CLK HIGH or LOW time tKP 33 45 ns

Output disable to DQ High-Z output tOHZ 788 8ns 3

Output enable to Low-Z output tOLZ 3333 ns 4

Setup time to active CLK edge tSP 23 33 ns

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Notes: 1. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 36. The

High-Z timings measure a 100mV transition from either VOH or VOL toward VCCQ/2.

2. High-Z to Low-Z timings are tested with the circuit shown in Figure 27 on page 36. The Low-

Z timings measure a 100mV transition away from the High-Z (VCCQ/2) level toward either

VOH or VOL.

3. WE# LOW time must be limited to tCEM (4µs).

Table 16: Asynchronous WRITE Cycle Timing Requirements

Parameter Symbol

70ns 85ns

Unit NotesMin Max Min Max

Address and ADV# LOW setup time tAS 00ns

Address HOLD from ADV# going HIGH tAVH 22ns

Address setup to ADV# going HIGH tAVS 55ns

Address valid to end of WRITE tAW 70 85 ns

LB#/UB# select to end of WRITE tBW 70 85 ns

CE# LOW to WAIT valid tCEW 1 7.5 1 7.5 ns

CE# HIGH between subsequent async operations tCPH 55ns

CE# LOW to ADV# HIGH tCVS 77ns

Chip enable to end of WRITE tCW 70 85 ns

Data HOLD from WRITE time tDH 00ns

Data WRITE setup time tDW 20 20 ns

Chip disable to WAIT High-Z output tHZ 88ns1

Chip enable to Low-Z output tLZ 10 10 ns 2

End WRITE to Low-Z output tOW 55ns2

ADV# pulse width tVP 57ns

ADV# setup to end of WRITE tVS 70 85 ns

WRITE cycle time tWC 70 85 ns

WRITE to DQ High-Z output tWHZ 88ns1

WRITE pulse width tWP 45 55 ns 3

WRITE pulse width HIGH tWPH 10 10 ns

WRITE recovery time tWR 00ns

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Notes: 1. tAS is required if tCSP > 20ns.

2. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by

either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than

15ns.

3. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 36. The

High-Z timings measure a 100mV transition from either VOH or VOL toward VCCQ/2.

Table 17: Burst WRITE Cycle Timing Requirements

Parameter Symbol

-7013

(133 MHz)

-701

(104 MHz)

-708

(80 MHz)

-856

(66 MHz)

Unit NotesMin Max Min Max Min Max Min Max

Address and ADV# LOW setup time tAS 0000ns1

Address hold from ADV# HIGH (fixed

latency)

tAVH 2222ns

CE# HIGH between subsequent burst or

mixed-mode operations

tCBPH 55 68ns2

Maximum CE# pulse width tCEM 4444µs2

CE# LOW to WAIT valid tCEW 1 7.5 1 7.5 1 7.5 1 7.5 ns

Clock period tCLK 7.5 9.62 12.5 15 ns

CE# setup to CLK active edge tCSP 2.5 3 4 5 ns

Hold time from active CLK edge tHD 1.5 2 2 2 ns

Chip disable to WAIT High-Z output tHZ 7888ns3

CLK rise or fall time tKHKL 1.2 1.6 1.8 2.0 ns

CLK to WAIT

valid

Variable LC = 4

Fixed LC = 8

tKHTL 5.5 7 9 11 ns

All other LCs 77911ns

CLK HIGH or LOW time tKP 3345ns

Setup time to active CLK edge tSP 23 33ns

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Timing Diagrams

Figure 28: Initialization Period

Figure 29: DPD Entry and Exit Timing Parameters

Notes: 1. The CellularRAM Workgroup 1.5 specification is a minimum of 150µs.

Table 18: Initialization and DPD Timing Parameters

Parameter Symbol

-701/708 -856

Unit NotesMin Max Min Max

Time from DPD entry to DPD exit tDPD 10 10 µs 1

CE# LOW time to exit DPD tDPDX 10 10 µs

Initialization period (required before normal operations) tPU 150 150 µs

tPU

VCC, VCCQ = 1.7V

VCC (MIN)

Device ready for

normal operation

CE#

DPD enabledWrite

RCR[4] = 0

DPD exit Device initialization Device ready for

normal operation

tDPD tDPDX tPU

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Figure 30: Asynchronous READ

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

VOH

VOL

A[22:0]

ADV#

CE#

LB#/UB#

OE#

WE#

WAIT

DQ[15:0]

Valid Address

tAA

tHZ

tBA

High-Z High-Z

tRC

tCO

tBHZ

tOHZ

tHZ

tOE

tCEW

Valid Output

High-Z

Undefined

Don’t Care

tBLZ

tLZ

tOLZ

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Figure 31: Asynchronous READ Using ADV#

A[22:0]

ADV#

CE#

LB#/UB#

OE#

WE#

WAIT

DQ[15:0]

Valid Address

tAADV

tAA

tVP

tHZ

tBA

High-Z High-Z

tCVS

tCO

tBLZ

tBHZ

tOHZ

tHZ

tLZ

tOE

tOLZ

Valid Output

tAVH

tAVS

High-Z

Undefined

Don’t Care

tCEW

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

VOH

VOL

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Figure 32: Page Mode READ

A[3:0]

ADV#

CE#

LB#/UB#

OE#

WE#

WAIT

DQ[15:0]

Valid Address

tAA

tHZ

tBA

High-Z High-Z

tCO

tCEM

tBLZ

tBHZ

tOHZ

tHZ

tLZ

tOE

tOLZ

CEW

High-Z

Undefined

Don’t Care

A[22:4] Valid Address

Valid

Address

Valid

Address

Valid

Address

tRC

Valid

Output

tAPA

tPC

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

VOH

VOL

tOH

Valid

Output

Valid

Output

Valid

Output

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Figure 33: Single-Access Burst READ Operation – Variable Latency

Notes: 1. Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT asserted

during delay.

A[22:0]

VIH

VIL

ADV#

VIH

VIL

CE#

VIH

VIL

OE#

VIH

VIL

WE#

VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK

VIH

VIL

VOH

VOL

tSP

tCLK

tCEW

tHD

tABA

tHD

Valid

Output

Valid

Address

High-Z

tKOH

tOHZ

tSP

LB#/UB#

VIH

VIL

tCSP

tCEM

High-Z

OLZ

tHD

tSP

tHZ

tKP tKP

tKHKL

tHD

tSP

Undefined

Don’t Care

READ Burst Identified

(WE# = HIGH)

tKHTL

tBOE

High-Z

tACLK

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Figure 34: 4-Word Burst READ Operation – Variable Latency

Notes: 1. Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT asserted

during delay.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK VIH

VIL

VOH

VOL

tSP

tCLK

tKHKL

tHD

tABA

Valid

Address

High-Z

tKOH

tHZ

tHD

tSP

LB#/UB# VIH

VIL

High-Z

tOLZ

High-Z

tCBPH

tCSP

tCEM

tSP tHD

tOHZ

tHD

tKP tKP

Undefined

Don’t Care

READ Burst Identified

(WE# = HIGH)

tCEW

tACLK

tKHTL

Valid

Output

Valid

Output Valid

Output

Valid

Output

tBOE

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Figure 35: Single-Access Burst READ Operation – Fixed Latency

Notes: 1. Non-default BCR settings: Fixed latency; latency code four (five clocks); WAIT active LOW;

WAIT asserted during delay.

A[22:0]

VIH

VIL

ADV#

VIH

VIL

CE#

VIH

VIL

OE#

VIH

VIL

WE#

VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK

VIH

VIL

VOH

VOL

CLK

CEW

AVH

AADV

Valid

Output

Valid

Address

High-Z

KOH

OHZ

LB#/UB#

VIH

VIL

CSP

CEM

High-Z

OLZ

KHKL

UndefinedDon’t Care

READ Burst Identified

(WE# = HIGH)

KHTL

BOE

High-Z

ACLK

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 36: 4-Word Burst READ Operation – Fixed Latency

Notes: 1. Non-default BCR settings: Fixed latency; latency code two (three clocks); WAIT active LOW;

WAIT asserted during delay.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK VIH

VIL

VOH

VOL

tAVH

tCLK

tKHKL

tCO

tAADV

tAA

High-Z

tKOH

tHZ

tHD

tSP

LB#/UB# VIH

VIL

High-Z

tOLZ

High-Z

tCBPH

tCSP

tCEM

tSP tHD

tOHZ

tHD

tKP tKP

UndefinedDon’t Care

READ Burst Identified

(WE# = HIGH)

tCEW tKHTL

tACLK

Valid

Output

Valid

Output Valid

Output

Valid

Output

tBOE

Valid

Address

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 37: READ Burst Suspend

Notes: 1. Non-default BCR settings for READ burst suspend: Fixed or variable latency; latency code

two (three clocks); WAIT active LOW; WAIT asserted during delay.

2. CLK can be stopped LOW or HIGH, but must be static, with no LOW-to-HIGH transitions dur-

ing burst suspend.

3. OE# can stay LOW during burst suspend. If OE# is LOW, DQ[15:0] will continue to output

valid data.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK VIH

VIL

VOH

VOL

tSP tHD

High-Z

tOLZ

tACLK

LB#/UB# VIH

VIL

tCLK

tSP

tCSP

tSP tHD

tHD

tSP tHD

tKOH

Valid

Output Valid

Output

Undefined

Don’t Care

Valid

Address

High-Z

tCBPH

tCEM

tHZ

tOHZ

Valid

Output Valid

Output

tBOE

tOHZ

tBOE

tOLZ

Valid

Address

Note 3

Note 2

High-Z

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

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Figure 38: Burst READ at End of Row (Wrap Off)

Notes: 1. Non-default BCR settings for burst READ at end of row: fixed or variable latency; WAIT

active LOW; WAIT asserted during delay.

2. For burst READs, CE# must go HIGH before the third CLK after the WAIT period begins

(before the third CLK after WAIT asserts with BCR[8] = 0, or before the fourth CLK after

WAIT asserts with BCR[8] = 1). Micron devices are fully compatible with the CellularRAM

Workgroup specification that requires CE# to go HIGH one cycle sooner than shown here.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK VIH

VIL

VOH

VOL

tKHTL tHZ

tCLK

LB#/UB# VIH

VIL

Valid

Output

Don’t Care

Valid

Output

End of Row

tHZ

High-Z

Note 2

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

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Figure 39: CE#-Controlled Asynchronous WRITE

A[22:0]

ADV#

CE#

LB#/UB#

OE#

WE#

WAIT

DQ[15:0]

Valid Address

High-Z High-Z

tWC

tCEW tHZ

Valid Input

tAW

Don’t Care

tWR

tCW tCPH

tDW

DQ[15:0]

OUT

tWHZ

tBW

tLZ

tDH

tAS

tWP

tWPH

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

VOH

VOL

High-Z

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 40: LB#/UB#-Controlled Asynchronous WRITE

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

A[22:0]

ADV#

CE#

LB#/UB#

OE#

WE#

WAIT

DQ[15:0]

VIH

VIL

Valid Address

High-Z

tWC

tCEW tHZ

Valid Input

tAW

Don’t Care

tWR

tCW

tDW

DQ[15:0]

OUT

VOH

VOL

tWHZ

tBW

tLZ

tDH

tAS

tWP

tWPH

High-Z

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

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Figure 41: WE#-Controlled Asynchronous WRITE

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

A[22:0]

ADV#

CE#

LB#/UB#

OE#

WE#

WAIT

DQ[15:0]

VIH

VIL

Valid Address

tWC

tCEW tHZ

Valid Input

tAW

Don’t Care

tWR

tDW

DQ[15:0]

OUT

VOH

VOL

tWHZ

tBW

tCW

tLZ

tWP

tDH

tOW

tAS

tWPH

High-Z

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 42: Asynchronous WRITE Using ADV#

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

A[22:0]

ADV#

CE#

LB#/UB#

OE#

WE#

WAIT

DQ[15:0]

VIH

VIL

Valid Address

High-Z High-Z

tCEW tHZ

Valid Input

tVS

Don’t Care

tCW

tDW

DQ[15:0]

OUT

VOH

VOL

tWHZ

tBW

tLZ

tWP

tDH

tOW

tAS

tWPH

tAS

tAVH

tAVS

tVP

tAW

High-Z

tCVS

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

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Figure 43: Burst WRITE Operation – Variable Latency Mode

Notes: 1. Non-default BCR settings for burst WRITE operation in variable latency mode: Latency code

two (three clocks); WAIT active LOW; WAIT asserted during delay; burst length of four;

burst-wrap enabled.

2. WAIT asserts for LC cycles for both fixed and variable latency. LC = latency code

(BCR[13:11]).

3. tAS required if tCSP > 20ns.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK VIH

VIL

VIH

VIL

tCLK tKP

tSP

tAS3

tCSP

D0 D3 D2 D1

Valid

Address

tHD

tSP

tHD

tSP

tHD

tSP

High-Z High-Z

LB#/UB# VIH

VIL

tSP tHD

tHD

Don’t Care

WRITE Burst Identified

(WE# = LOW)

tCBPH

tKHTL

tAS3

tHZ

tCEW

tKP tKHKL

Note 2

tCEM

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 44: Burst WRITE Operation – Fixed Latency Mode

Notes: 1. Non-default BCR settings for burst WRITE operation in fixed latency mode: Fixed latency;

latency code two (three clocks); WAIT active LOW; WAIT asserted during delay; burst length

four; burst wrap enabled.

2. WAIT asserts for LC cycles for both fixed and variable latency. LC = latency code

(BCR[13:11]).

3. tAS required if tCSP > 20ns.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK VIH

VIL

VIH

VIL

tCLK tKP

tSP

tAS3

tCSP

D0 D3 D2 D1

Valid

Address

tHD

tSP

tHD

tSP

tHD

tSP

High-Z High-Z

LB#/UB# VIH

VIL

tSP tHD

tHD

Don’t Care

WRITE Burst Identified

(WE# = LOW)

tCBPH

tKHTL

tAS3

tHZ

tCEW

tKP tKHKL

Note 2

tCEM

tAVH

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

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Figure 45: Burst WRITE at End of Row (Wrap Off)

Notes: 1. Non-default BCR settings for burst WRITE at end of row: fixed or variable latency; WAIT

active LOW; WAIT asserted during delay.

2. For burst WRITEs, CE# must go HIGH before the third CLK after the WAIT period begins

(before the third CLK after WAIT asserts with BCR[8] = 0, or before the fourth CLK after

WAIT asserts with BCR[8] = 1).

3. Devices from different CellularRAM vendors can assert WAIT so that the end-of-row data is

input one cycle before the WAIT period begins (as shown, solid line), or the same cycle that

asserts WAIT. This difference in behavior will not be noticed by controllers that monitor

WAIT, or that use WAIT to abort on an end-of-row condition.

4. Micron devices are fully compatible with the CellularRAM Workgroup specification that

requires CE# to go HIGH one cycle sooner than shown here.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE#

VIH

VIL

WE#

VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK VIH

VIL

VIH

VIL

tKHTL

tHZ tHZ

tCLK

tSP tHD

End of row

(A[6:0] = 7Fh)

Valid Input Valid Input

Don’t Care

VIH

VIL

LB#/UB#

High-Z

Note 2

Note 3

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 46: Burst WRITE Followed by Burst READ

Notes: 1. Non-default BCR settings for burst WRITE followed by burst READ: Fixed or variable latency;

latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.

2. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by

either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than

15ns. CE# can stay LOW between burst READ and burst WRITE operations, but CE# must not

remain LOW longer than tCEM. See burst interrupt diagrams (Figures 47 through 49, on

pages 59 through 61) for cases where CE# stays LOW between bursts.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

IN/OUT

VOH

VOL

CLK VIH

VIL

VIH

VIL

tCLK

tSP

tCSP

D3 D2 D1

Valid

Address

tHD

tSP

tHD

tSP

tSP tHD

Valid

Address

tCSP tOHZ

tKOH

tACLK

Valid

Output

Valid

Output Valid

Output

Valid

Output

High-Z

High-Z VOH

VOL

LB#/UB# VIH

VIL

tHD

tSP tHD

tHD

High-Z

Undefined

Don’t Care

tBOE

tCBPH

High-Z

tHD

tHD tSP

Note 2

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 47: Burst READ Interrupted by Burst READ or WRITE

Notes: 1. Non-default BCR settings for burst READ interrupted by burst READ or WRITE: Fixed or vari-

able latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. All

bursts shown for variable latency; no refresh collision.

2. Burst interrupt shown on first allowable clock (for example, after the first data received by

the controller).

3. CE# can stay LOW between burst operations, but CE# must not remain LOW longer than

tCEM.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE#

2nd Cycle READ

VIH

VIL

OE#

2nd Cycle WRITE

VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0] OUT

2nd Cycle READ

VOH

VOL

CLK VIH

VIL

DQ[15:0] IN

2nd Cycle WRITE

VIH

VIL

tHD

tSP

tSP tHD

tCLK

tOHZ

tKOH

tACLK

Valid

Output

Valid

Output Valid

Output

Valid

Output

LB#/UB#

2nd Cycle READ

VIH

VIL

LB#/UB#

2nd Cycle WRITE

VIH

VIL

tSP tHD

UndefinedDon’t Care

tHD

tSP

tCSP

tSP tHD

Valid

Address

tOHZ

tKOH

tACLK

Valid

Output

High-Z

tBOE

tCEW

tSP tHD

tHD

tSP

VOH

VOL

tBOE

D2 D3D1

High-Z

tCEM (Note 3)

Valid

Address

READ Burst interrupted with new READ or WRITE. See Note 2.

High-Z

tKHTL

tHD

High-Z

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 48: Burst WRITE Interrupted by Burst WRITE or READ – Variable Latency Mode

Notes: 1. Non-default BCR settings for burst WRITE interrupted by burst WRITE or READ in variable

latency mode: Variable latency; latency code two (three clocks); WAIT active LOW; WAIT

asserted during delay. All bursts shown for variable latency; no refresh collision.

2. Burst interrupt shown on first allowable clock (i.e., after first data word written).

3. CE# can stay LOW between burst operations, but CE# must not remain LOW longer than

tCEM.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE#

2nd Cycle WRITE

VIH

VIL

OE#

2nd Cycle READ

VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0] IN

2nd Cycle WRITE

DQ[15:0] OUT

2nd Cycle READ

VOH

VOL

CLK VIH

VIL

VIH

VIL

tCLK

tSP

tCSP

Valid

Address

tHD

tSP

tHD

tSP

tSP tHD

VALID

ADDRESS

tHD

High-Z

LB#/UB#

2nd Cycle WRITE

LB#/UB#

2nd Cycle READ

VIH

VIL

VIH

VIL

tHD

tSP tHD

tKHTL

tSP tHD

Undefined

Don’t Care

D2 D3 D1

tHD

tSP

tHD

tHD tSP

tOHZ

tBOE

tSP tHD

tKOH

tACLK

Valid

Output

Valid

Output Valid

Output

Valid

Output

High-Z

VOH

VOL

VOH

VOL

WRITE Burst interrupted with new WRITE or READ. See Note 2.

Valid

Address

tCEM (Note 3)

tCEW

High-Z High-Z

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 49: Burst WRITE Interrupted by Burst WRITE or READ – Fixed Latency Mode

Notes: 1. Non-default BCR settings for burst WRITE interrupted by burst WRITE or READ in fixed

latency mode: Fixed latency; latency code two (three clocks); WAIT active LOW; WAIT

asserted during delay.

2. Burst interrupt shown on first allowable clock (i.e., after first data word written).

3. CE# can stay LOW between burst operations, but CE# must not remain LOW longer than

tCEM.

A[22:0] VIH

VIL

ADV# VIH

VIL

CE# VIH

VIL

OE#

2nd Cycle WRITE

VIH

VIL

OE#

2nd Cycle READ

VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0] IN

2nd Cycle WRITE

DQ[15:0] OUT

2nd Cycle READ

VOH

VOL

CLK VIH

VIL

VIH

VIL

tCLK

tSP

tCSP

Valid

Address

tHD

tSP

tHD

tSP

tHD

High-Z

LB#/UB#

2nd Cycle WRITE

LB#/UB#

2nd Cycle READ

VIH

VIL

VIH

VIL

tSP tHD

Undefined

Don’t Care

tHD

D2 D3 D1

tHD

tSP

tHD tSP

tOHZ

tBOE

tKOH

tACLK

Valid

Output

Valid

Output Valid

Output

Valid

Output

High-Z

VOH

VOL

VOH

VOL

tKHTL

WRITE Burst interrupted with new WRITE or READ. See Note 2.

Valid

Address

tCEM (Note 3)

tAVH tAVH

tHD

tCEW

High-Z High-Z

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 50: Asynchronous WRITE Followed by Burst READ

Notes: 1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Fixed or variable

latency; latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.

2. When transitioning between asynchronous and variable-latency burst operations, CE# must

go HIGH. CE# can stay LOW when transitioning to fixed-latency burst READs. A refresh

opportunity must be provided every tCEM. A refresh opportunity is satisfied by either of the

following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.

tCLK

tSP tHD

tSP

Valid Address

tOHZ

tKOH

tACLK

High-Z

Valid Address Valid Address

tAVS tAVH tAW tWR

tVP tVS

A[22:0] VIH

VIL

ADV# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

IN/OUT

VOH

VOL

CLK VIH

VIL

VIH

VIL

VOH

VOL

CE# VIH

VIL

LB#/UB# VIH

VIL

tCW

tCVS

tWPH

tAS

tWP

tWC

tDH tDW

Data Data

High-Z

tHD

tSP

tCEW

tSP tHD

tCSP

tWC

tBW

Valid

Output Valid

Output

Valid

Output

Don’t Care Undefined

tHD

tBOE

tCBPH

Note 2

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 51: Asynchronous WRITE (ADV# LOW) Followed by Burst READ

Notes: 1. Non-default BCR settings for asynchronous WRITE, with ADV# LOW, followed by burst

READ: Fixed or variable latency; latency code two (three clocks); WAIT active LOW; WAIT

asserted during delay.

2. When transitioning between asynchronous and variable-latency burst operations, CE# must

go HIGH. CE# can stay LOW when transitioning to fixed-latency burst READs. A refresh

opportunity must be provided every tCEM. A refresh opportunity is satisfied by either of the

following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.

tCLK

tSP tHD

tHD

Valid Address

tCSP

tKOH

tACLK

Valid

Output

High-Z

Valid Address Valid Address

A[22:0] VIH

VIL

ADV# VIH

VIL

OE# VIH

VIL

WE# VIH

VIL

WAIT

DQ[15:0]

IN/OUT

VOH

VOL

CLK VIH

VIL

VIH

VIL

VOH

VOL

CE#

VIH

VIL

LB#/UB# VIH

VIL

tCW

tWPH

tWP

tWC

tDH tDW

Data Data

High-Z

tHD

tSP

tSP tHD

tWC tWC

tBW

tAW tWR

tSP

Valid

Output Valid

Output

Undefined

Don’t Care

tBOE

tOHZ

tCEW

tCBPH

High-Z

Note 2

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 52: Burst READ Followed by Asynchronous WRITE (WE#-Controlled)

Notes: 1. Non-default BCR settings for burst READ followed by asynchronous WE#-controlled WRITE:

Fixed or variable latency; latency code two (three clocks); WAIT active LOW; WAIT asserted

during delay.

2. When transitioning between asynchronous and variable-latency burst operations, CE# must

go HIGH. CE# can stay LOW when transitioning from fixed-latency burst READs; asynchro-

nous operation begins at the falling edge of ADV#. A refresh opportunity must be provided

every tCEM. A refresh opportunity is satisfied by either of the following two conditions: a)

clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.

A[22:0]

VIH

VIL

ADV#

VIH

VIL

CE#

VIH

VIL

OE#

VIH

VIL

WE#

VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK

VIH

VIL

VOH

VOL

VIH

VIL

tSP

tCLK

tACLK

tCEW

tHD

tAW

tWR

Valid

Output

Valid

Address

High-Z

tKOH tDW

tOHZ

tSP

LB#/UB#

VIH

VIL

tCSP

High-Z

OLZ

tHD

WPH

tHD tBW

tSP

tHZ

tHD

tSP

Undefined

Don’t Care

READ Burst Identified

(WE# = HIGH)

tWC

tHD

tKHTL

tBOE

Valid

Address

Valid

Input

High-Z

tCEW tHZ

tCBPH

Note 2

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128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 53: Burst READ Followed by Asynchronous WRITE Using ADV#

Notes: 1. Non-default BCR settings for burst READ followed by asynchronous WRITE using ADV#:

Fixed or variable latency; latency code two (three clocks); WAIT active LOW; WAIT asserted

during delay.

2. When transitioning between asynchronous and variable-latency burst operations, CE# must

go HIGH. CE# can stay LOW when transitioning from fixed-latency burst READs; asynchro-

nous operation begins at the falling edge of ADV#. A refresh opportunity must be provided

every tCEM. A refresh opportunity is satisfied by either of the following two conditions: a)

clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.

A[22:0]

VIH

VIL

ADV#

VIH

VIL

CE#

VIH

VIL

OE#

VIH

VIL

WE#

VIH

VIL

WAIT

DQ[15:0]

VOH

VOL

CLK

VIH

VIL

VOH

VOL

tSP

tCLK

tCEW

tHD

tVS

tAVS tAVH

tAW

tCW

Valid Output

Valid Address

High-Z

tKOH tDW

tOHZ

tSP tHD tVP

LB#/UB#

VIH

VIL

tCSP

High-Z

tOLZ

tHD

tWP tWPH

tAS

tDH

tHD tBW

tSP

tHZ

tSP

Undefined

Don’t Care

READ Burst Identified

(WE# = HIGH)

tKHTL

Valid Address

Valid Input

High-Z

tCEW tHZ

tCBPH

tACLK

tBOE

tAS

tHD

Note 2

VIH

VIL

PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65 Micron Technology, Inc., reserves the right to change products or specifications without notice.

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 54: Asynchronous WRITE Followed by Asynchronous READ – ADV# LOW

Notes: 1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least

5ns (tCPH) to schedule the appropriate refresh interval. Otherwise, tCPH is only required

after CE#-controlled WRITEs.

Valid Address Valid Address

A[22:0] VIH

VIL

ADV#

VIH

VIL

OE#

WE#

WAIT

DQ[15:0]

IN/OUT

VOH

VOL

VIH

VIL

VOH

VOL

CE#

LB#/UB# VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

tCW

tWPH

tWP

tAS

tWC

tDH tDW

Data

High-Z

Valid Address

tAA

tBHZ

tCPH

Valid Output

High-Z

tOE

tOLZ

tLZ

tBLZ

tOHZ

tHZ

tAW tWR

tBW

tWHZ

tHZ tHZ

Don’t Care Undefined

Data

Note 1

PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65 Micron Technology, Inc., reserves the right to change products or specifications without notice.

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

Figure 55: Asynchronous WRITE Followed by Asynchronous READ

Notes: 1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least

5ns (tCPH) to schedule the appropriate refresh interval. Otherwise, tCPH is only required

after CE#-controlled WRITEs.

Valid Address Valid Address

tAVS tAVH

tVP tVS

A[22:0] VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

ADV#

OE#

WE#

WAIT

DQ[15:0]

IN/OUT

VOH

VOL

VIH

VIL

VOH

VOL

CE#

LB#/UB#

tCW

tWPH

tAS tWP

tWC

tDH tDW

Data Data

High-Z

Valid Address

tAA

tBHZ

tCPH

Valid Output

High-Z

tCVS

tOLZ

tLZ

tAS

tBLZ

tOHZ

tHZ

tAW tWR

tBW

tWHZ

UndefinedDon’t Care

tOE

Note 1

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992

Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. CellularRAM is a trademark of Micron

Technology, Inc., inside the U.S. and a trademark of Qimonda AG outside the U.S. All other trademarks are the property of

their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and tem-

perature range set forth herein. Although considered final, these specifications are subject to change, as further product

development and data characterization sometimes occur.

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

Page/Burst CellularRAM 1.5 Memory

PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65 Micron Technology, Inc., reserves the right to change products or specifications without notice.

Package Information

Figure 56: 54-Ball VFBGA

Notes: 1. All dimensions are in millimeters.

2. Package width and length do not include mold protrusion; allowable mold protrusion is

0.25mm per side.

3. The MT45W8MW16BGX uses “green” packaging.

BALL A1 ID

1.00 MAX

MOLD COMPOUND:

EPOXY NOVOLAC

SUBSTRATE MATERIAL:

PLASTIC LAMINATE

SOLDER BALL MATERIAL:

96.5% Sn, 3% Ag, 0.5% Cu

BALL A6 BALL A1

8.00 ±0.10

4.00 ±0.051.875

BALL A1 ID

54X Ø 0.37

DIMENSIONS APPLY

TO SOLDER BALLS

POST REFLOW.

PRE-REFLOW BALL

DIAMETER IS 0.35

ON A 0.30 SMD

BALL PAD.

0.75 TYP

5.00 ±0.05

3.00

6.00

10.00 ±0.10

0.70 ±0.05

0.10 A A

SEATING

PLANE

3.75

0.75 TYP