All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8 Rev. 02.1, 2009-02-18
PTF210101M
PTF210101M
Package PG-RFP-10
RF Characteristics
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 15 — — dB
Drain Efficiency ηD35 — — %
Intermodulation Distortion IMD — — –28 dBc
High Power RF LDMOS Field Effect Transistor
10 W, 2110 – 2170 MHz
Description
The PTF210101M is an unmatched 10-watt GOLDMOS® FET intended for
class AB base station applications in the 2110 to 2170 MHz band. This
LDMOS device offers excellent gain, efficiency and linearity performance in
a small footprint.
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ
= 180 mA, ƒ = 2170 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 3.84 MHz bandwidth
-55
-50
-45
-40
-35
-30
-25
24 28 32 36
Average Output Power (dBm)
Adjacent Channel
Power Ratio (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
ACPR
Efficiency
*See Infineon distributor for future availability.
Features
•Typical WCDMA performance
- Average output power = 2.0 W
- Gain = 15 dB
- Efficiency = 20%
- ACPR = –45 dB
•Typical CW performance
- Output Power at P–1dB = 10 W
- Gain = 14 dB
- Efficiency = 50%
•Integrated ESD protection:
Human Body Model Class 1 (minimum)
•Excellent thermal stability
•Low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
•Pb-free and RoHS compliant
PTF210101M
Data Sheet 2 of 8 Rev. 02.1, 2009-02-18
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) —0.83 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ150 °C
Total Device Dissipation PD19 W
Above 25°C derate by 0.15 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 10 W DC )RθJC 6.5 °C/W
Ordering Information
Type Package Outline Package Description Marking
PTF210101M PG-RFP-10 Molded plastic, SMD 0211
*See Infineon distributor for future availability.
PTF210101M
Data Sheet 3 of 8 Rev. 02.1, 2009-02-18
Typical Performance (data taken in production test fixture)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 180 mA, ƒ = 2170 MHz
11
12
13
14
15
16
17
15 20 25 30 35 40 45
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
Drain Efficiency (%)
Gain
Efficiency
Two-Tone Drive-up
VDD = 28 V, IDQ = 180 mA, ƒ1 = 2169, ƒ2 = 2170 MHz
-80
-70
-60
-50
-40
-30
-20
26 28 30 32 34 36 38 40 42
Output Power, PEP (dBm)
Intermodulation Distortion (dBc)
IM5
IM7
IM3
Two-Tone Power Sweep
VDD = 28 V, IDQ = 180 mA, ƒ1 = 2169, ƒ2 = 2170 MHz
11
12
13
14
15
16
26 28 30 32 34 36 38 40 42
Output Power, PEP (dBm)
Gain (dB)
0
5
10
15
20
25
30
35
40
45
Efficiency (%)
Gain
Efficiency
Broadband Performance
VDD = 28 V, IDQ = 180 mA, POUT = 41 dBm
0
10
20
30
40
50
60
2100 2120 2140 2160 2180
Frequency (MHz)
Gain (dB), Efficiency (%)
-16
-15
-14
-13
-12
-11
-10
Input Return Loss (dB)
Gain
Efficiency
Return Loss
PTF210101M
Data Sheet 4 of 8 Rev. 02.1, 2009-02-18
Typical Performance (cont.)
Z Source Z Load
G
S
D
Broadband Circuit Impedance
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2080 2.4 –6.0 2.1 –3.3
2110 2.1 –5.8 2.1 –3.1
2140 1.8 –5.2 2.1 –2.9
2170 1.6 –4.9 2.0 –2.8
2200 1.4 –4.5 2.0 –2.6
Voltage Sweep
IDQ
= 180 mA, ƒ = 2110 MHz
37
38
39
40
41
42
20 22 24 26 28 30 32 34
Supply Voltage (V)
Output Power (dBm)
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
-20 020 40 60 80 100
Case Temperature (ºC)
Normalized Bias Voltage
0.05 A
0.28 A
0.51 A
0.74 A
0.97 A
1.20 A
PTF210101M
Data Sheet 5 of 8 Rev. 02.1, 2009-02-18
210101m_sch
R3 R4
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3K V
R1
1.2K V
LM7805
C1
0.001µF
QQ1
Q1
R5
10µF
35V
C6
0.1µF
C5
R6
10 µF
35V
C4 R7
10pF
C7
10 V
1K Vl8
l7
220 V
R8
10pF10pF
1.2pF
l1l10 l13
DUT
RF_IN
C8
C16
RF_OUT
C9
C10
1.4pF
l2l3l4l5l6
C11
2.4pF
10pF 0.1µF 10µF
50V
1µF
VDD
l11
C12 C13 C14 C15
l12
2KV220 V
l9
10 V
VDD
Reference Circuit
Reference circuit schematic for ƒ = 2170 MHz
Circuit Assembly Information
DUT PTF210101M LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers 4350 1 oz. copper
Microstrip Electrical Characteristics at 2170 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.048 λ, 50.0 Ω3.99 x 1.63 0.157 x 0.064
l20.139 λ, 50.0 Ω11.63 x 1.63 0.458 x 0.064
l30.034 λ, 50.0 Ω2.84 x 1.63 0.112 x 0.064
l40.025 λ, 9.6 Ω1.93 x 14.27 0.076 x 0.562
l50.068 λ, 9.6 Ω5.21 x 14.27 0.205 x 0.562
l60.028 λ, 9.6 Ω2.16 x 14.27 0.085 x 0.562
l70.176 λ, 81.0 Ω15.11 x 0.69 0.595 x 0.027
l80.193 λ, 81.0 Ω16.66 x 0.69 0.656 x 0.027
l90.015 λ, 12.9 Ω1.19 x 10.16 0.047 x 0.400
l10 0.233 λ, 12.9 Ω17.93 x 10.16 0.706 x 0.400
l11 0.197 λ, 67.0 Ω16.76 x 1.02 0.660 x 0.040
l12 0.020 λ, 50.0 Ω1.68 x 1.63 0.066 x 0.064
l13 0.072 λ, 50.0 Ω6.68 x 1.63 0.263 x 0.064
1Electrical characteristics are rounded.
PTF210101M
Data Sheet 6 of 8 Rev. 02.1, 2009-02-18
QQ1
C3 C1
R1
C2
R2
C4
C7
C6
C8 C9
C10
C11
C16
C13
C14C12R6 R7
R8
R5
210101M_C_02
210101m_assy
RF_IN RF_OUT
LM
10
35V
+
VDD
10
35 V
+
C5
R3
R4
Q1 C15
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)*
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C6 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5, C13 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C7, C9, C12, C16 Ceramic capacitor, 10 pF ATC 100B 100
C8 Ceramic capacitor, 1.2 pF ATC 100B 1R2
C10 Ceramic capacitor, 1.4 pF ATC 100B 1R4
C11 Ceramic capacitor, 2.4 pF ATC 100B 2R4
C14 Capacitor, 1.0 µF ATC 920C105
C15 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3, R8 Chip Resistor 220 ohms Digi-Key P221ECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R6 Chip Resistor 10 ohms Digi-Key P10ECT-ND
R7 Chip Resistor 1 k-ohms Digi-Key P1KECT-ND
*Gerber Files for this circuit available on request
PTF210101M
Data Sheet 7 of 8 Rev. 02.1, 2009-02-18
Diagram Notes—unless otherwise specified:
1. All tolerances ± 0.127 [.005] unless specified otherwise.
2. Dimensions are mm
3. Lead thickness: 0.09
4. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain
Package Outline Specifications
Package PG-RFP-10 (TSSOP-10 Outline)
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
M
PG-RFP-10
0.85 ±0.1
0.09
3 ±0.1
0.42
0.125
6° M
AX.
H
0.1 A
4.9 0.25 A B C
0.08 M
0.22 ±0.05
0.15 MAX.
1.1 MAX.
A
C
0.5
10 6
51
3 ±0.1 B
Index marking
A B C
+0.15
–0.10
+0.08
–0.05
Data Sheet 8 of 8 Rev. 02.1, 2009-02-18
PTF210101M
Confidential—Limited Distribution
Revision History: 2009-02-18 Data Sheet
Previous version: 2005-12-05, Data Sheet
Page Subjects (major changes since last revision)
6Fixed typing error
1Revise package information and photo
We Listen to Your Comments
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
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