MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION IM3(Min.)=-25dBc at Po=33dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain SYMBOL P1dB Compression Point Power Gain at 1dB Gain CONDITIONS G1dB Compression Point Drain Current IDS1 Power Added Efficiency add 3rd Order Intermodulation IM3 Distortion VDS= 9V IDSset=2.2A f = 13.75 to 14.5GHz Two Tone Test UNIT MIN. TYP. MAX. dBm 39.0 39.5 dB 5.0 6.0 A 2.8 3.0 % 26 dBc -25 Po= 33.0dBm Drain Current IDS2 (Single Carrier Level) A 2.8 3.0 Channel Temperature Rise Tch (VDS X IDS+Pin-P1dB) C 80 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITIONS gm VDS= 3V IDS= 2.4A VGSoff VDS= 3V IDS= 72mA IDSS VDS= 3V VGS= 0V VGSO IGS= -72A Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. mS 2200 V -0.7 -2.0 -4.5 A 5.0 V -5 C/W 3.0 3.7 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar. 2006 TIM1314-9L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 5.7 Total Power Dissipation (Tc= 25 C) PT W 30.0 Channel Temperature Tch C 175 Storage Tstg C -65 to +175 4-R2.4 2.0MIN. PACKAGE OUTLINE (2-9D1B) (1) Unit in mm (1) Gate (2) (3) Drain 2.0MIN 0.50.15 1.80.3 0.2MAX 8.5 MAX. 3.2MAX +0.1 0.1 -0.05 13.00.3 17.0 MAX. 1.20.3 (3) (2) Source 9.70.3 2.50.3 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1314-9L RF PERFORMANCE Pout(dBm) Output Power (Pout) vs. Frequency VDS=9V IDS2.8A 41 Pin=33.5 dBm 40 39 38 37 13.75 14.0 14.25 14.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 42 freq.=14.5GHz 41 VDS=9V 50 IDS2.8A Pout Pout(dBm) 39 40 38 37 30 36 add 35 20 34 33 10 27 29 31 33 Pin(dBm) 3 35 37 add(%) 40 TIM1314-9L Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 40 30 20 10 0 0 40 80 120 160 200 Tc( C ) IM3 vs. Output Power Characteristics 0 VDS=9V -10 freq.=14.5GHz f=5MHz IM3(dBc) -20 -30 -40 -50 28 30 32 34 Pout(dBm) @Single carrier level 4 36 38