CNY35X CNY35 A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Package Code " GG " 'X' SPECIFICATION APPROVALS z VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The CNY35 optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z AC or polarity insensitive input z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z Computer terminals z Industrial systems controllers z Telephone sets, Telephone exchangers z Signal transmission between systems of different potentials and impedances Dimensions in mm 2.54 7.0 6.0 1 2 6 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 13 Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -30C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUTDIODE Forward Current Power Dissipation 50mA 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Emitter-base Voltage BVEBO Collector Current Power Dissipation 30V 70V 7V 5V 50mA 150mW OPTION G OPTION SM SURFACE MOUNT 7.62 POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 4.67mW/C above 25C) 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 17/7/08 DB91040 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Forward Voltage (VF) Output Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (note 2 ) 10 Coupled 1.2 V IF = 10mA 30 V IC = 1mA 70 5 7 V V V nA IC = 100A IE = 100A IE = 100A VCE = 10V % 10mAIF , 10V VCE V 10mAIF , 0.5mAIC 50 Collector-emitter SaturationVoltageVCE(SAT) 17/7/08 0.4 Input to Output Isolation Voltage VISO 5300 7500 VRMS VPK See note 1 See note 1 Input-output Isolation Resistance RISO 5x1010 VIO = 500V (note 1) S S VCE = 2V, IC = 2mA RL = 100 Response Time (Rise), tr Response Time (Fall), tf Note 1 Note 2 1.5 TEST CONDITION 4 3 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91040m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Forward Voltage 100 80 Forward current IF (mA) Collector power dissipation PC (mW) 400 300 200 100 60 40 20 0 -20 -40 -60 -80 -100 0 -30 0 25 50 75 100 -2.0 125 Forward Current vs. Ambient Temperature Normalised output current ( IC ) Forward current IF (mA) 1.0 2.0 Normalised Output Current vs. Ambient Temperature 120 100 80 60 40 20 2.4 2.2 2.0 1.8 Normalised to VCE = 10V , IF = 10mA , RBE = 1M , TA = 25C IF = 20mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IF = 10mA IF = 5mA 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) 0 25 50 75 Ambient temperature TA ( C ) Normalised Output Current vs. Collector-emitter Voltage Normalised Output Current vs. Forward Current 10 IF = -10mA 1 IF = +10mA 10-1 Normalised to VCE = 10V , IF = +10mA , TA = 25C -2 10 -30 Normalised output current ( IC ) Normalised output current ( IC ) 0 Forward voltage VF ( V ) Ambient temperature TA ( C ) 100 5 1 0.5 0.1 0.05 0.01 0.005 Normalised to VCE = 10V , IF = 10mA , TA = 25C 0.001 0.0005 0.0001 10-3 0.1 0.2 0.5 1 2 5 10 20 Collector-emitter voltage VCE ( V ) 17/7/08 -1.0 50 0.1 0.2 0.5 1 2 5 10 20 50 100 Forward current IF (mA) DB91040m-AAS/A3