D
S
G
G D S
Gate Drain Source
Benefits
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR420)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Pb-Free ; RoHS Compliant ; Halogen-Free
Description
Third Generation HEXFETs from Infineon Technology
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance and
cost-eectiveness.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. Power dissi-
pation levels up to 1.5 watts are possible in typical surface
mount applications.
Base part number Package Type Standard Pack
Form Quantity
IRFR420PbF D-Pak Tape and Reel 2000 IRFR420TRPbF
Orderable Part Number
VDSS 500V
RDS(on) max 3.0
ID (Silicon Limited) 2.4A
D-Pak
IRFR420TRPbF
Final Datasheet Please read the important Notice and Warnings at the end of this document V2.0
www.infineon.com 2017-08-01
IRFR420TRPbF
HEXFET® Power MOSFET
D
G
S
Final Datasheet V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
2
Table of Contents
Table of Contents
Benefits …..………………………………………………………………………...……………..…………….1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1 Parameters ………………………………………………………………………………………………3
2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
3 Electrical characteristics ………………………………………………………………………………5
4 Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………11
Qualification Information ……………………………………………………………………………………………13
Revision History …………………………………………………………………………………………..…………14
Final Datasheet V2.0
2017-08-01
HEXFET® Power MOSFET
IRFR420TRPbF
3
1 Parameters
Table1 Key performance parameters
Parameter Values Units
VDS 500 V
RDS(on) max 3.0
ID 2.4 A
Parameters
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Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified)
Parameter Symbol Conditions Values Unit
Continuous Drain Current ID TC = 25°C, VGS @ 10V 2.4
A
Continuous Drain Current ID TC = 100°C, VGS @ 10V 1.5
Pulsed Drain Current IDM TC = 25°C 8.0
Maximum Power Dissipation PD TC = 25°C 42
Maximum Power Dissipation (PCB Mount) PD TA = 25°C 2.5
Linear Derating Factor TC = 25°C 0.33 W/°C
Gate-to-Source Voltage VGS - ± 20 V
Operating Junction and
Storage Temperature Range
TJ
TSTG - -55 to + 150
°C
Soldering Temperature, for 10 seconds
(1.6mm from case) - - 260
W
Linear Derating Factor (PCB Mount) TA = 25°C 0.02
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Figure 11).
Limited by TJmax , starting TJ = 25°C, L = 139mH, RG = 25
, IAS = 2.4A, VGS =10V. (See Figure 10).
ISD
2.4A, di/dt
50A/µs, VDD
V(BR)DSS, TJ
150°C.
Pulse width
300µs; duty cycle
2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.please refer to application note to AN-994.
R
is measured at TJ approximately 90°C.
Table 4 Avalanche characteristics
Parameter Symbol Values Unit
Single Pulse Avalanche Energy EAS (Thermally limited) 400 mJ
Avalanche Current IAR 2.4 A
Repetitive Avalanche Energy EAR mJ
4.2
Table 3 Thermal characteristics
Parameter Symbol Conditions Typ. Max. Unit
Junction-to-Case RJC TJ approximately 90°C - 3.0
°C/W
Junction-to-Ambient (PCB Mount) RJA - - 50
Junction-to-Ambient RJA - - 110
Min.
-
-
-
2 Maximum ratings and thermal characteristics
Maximum ratings and thermal characteristics
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Table 6 Dynamic characteristics
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Forward Trans conductance gfs VDS = 50V, ID = 1.4A 1.5 - - S
Total Gate Charge Qg ID = 2.1A
VDS = 400V
VGS = 10V
See Fig.6 and 13
- - 19
nC
Gate-to-Source Charge Qgs - - 3.3
Gate-to-Drain Charge Qgd - - 13
Turn-On Delay Time td(on) VDD = 250V - 8.0 -
ns
Rise Time tr ID = 2.1A - 8.6 -
Turn-O Delay Time td(o) RG = 18 - 33 -
Fall Time tf RD = 120See Fig.10 - 16 -
Internal Drain Inductance LD Between lead,
6mm (0.25in.)
from package
and center of die contact
- 4.5 -
nH
Internal Source Inductance Ls - 7.5 -
Input Capacitance Ciss VGS = 0V - 360 -
Output Capacitance Coss VDS = 25V - 92 - pF
Reverse Transfer Capacitance Crss ƒ = 1.0MHz, See Fig.5 - 37 -
Table 7 Reverse Diode
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Continuous Source Current IS MOSFET symbol - - 2.4
A
(Body Diode) showing the
Pulsed Source Current ISM integral reverse - - 8.0
(Body Diode) p-n junction diode.
Diode Forward Voltage VSD TJ = 25°C, IS = 2.4A,VGS = 0V - - 1.6 V
Peak Diode Recovery dv/dt dv/dt TJ = 150°C, IS = 2.1A,VDS = 500V - - 3.5 V/ns
Reverse Recovery Time trr TJ = 25°C - 260 520 ns
Reverse Recovery Charge Qrr TJ = 25°C - 0.7 1.4 C
D
S
G
IF = 2.1A,
di/dt = 100A/µs
Table 5 Static characteristics
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 500 - - V
Breakdown Voltage Temp. Coeicient V(BR)DSS/TJ Reference to 25°C, ID = 1mA - 0.59 - V/°C
Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 1.4A - - 3.0
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0 V
Drain-to-Source Leakage Current IDSS VDS =500V, VGS =0V - - 25 µA
VDS =400V,VGS = 0V,TJ =125°C - - 250
Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100
Gate-to-Source Reverse Leakage IGSS VGS = -20V - - -100 nA
3 Electrical characteristics
Electrical characteristics
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Electrical characteristic diagrams
4 Electrical characteristic diagrams
Figure 1 Typical Output Characteristics,
TC = 25°C
Figure 2 Typical Output Characteristics,
TC = 150°C
Figure 3 Typical Transfer Characteristics Figure 4 Normalized On-Resistance vs. Temperature
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Electrical characteristic diagrams
Figure 5 Typical Capacitance vs. Drain-to-Source
Voltage
Figure 6 Typical Gate Charge vs. Gate-to-Source
Voltage
Figure 7 Typical Source-Drain Diode Forward
Voltage
Figure 8 Maximum Safe Operating Area
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Electrical characteristic diagrams
Figure 9 Maximum Drain Current vs. Case
Temperature
Figure 10 Maximum Avalanche Energy vs.
Temperature
Figure 11 Maximum Eective Transient Thermal Impedance, Junction-to-Case
25 50 75 100 125 150
TC , Case Temperature (°C)
0.0
0.40.4
0.80.8
1.21.2
1.61.6
2.02.0
2.4
0.0
0.4
0.8
1.2
1.6
2.0
ID, Drain Current (A)
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 1.1A
1.5A
BOTTOM 2.4A
1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Thermal Response ( Z
thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
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Electrical characteristic diagrams
Figure 12a Switching Time Test Circuit Figure 12b Switching Time Waveforms
Figure 13 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs
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IRFR420TRPbF
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Electrical characteristic diagrams
Figure 14a Unclamped Inductive Test Circuit Figure 14b Unclamped Inductive Waveforms
Figure 15a Gate Charge Waveform
Figure 15b Gate Charge Test Circuit
Final Datasheet V2.0
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D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
D-Pak (TO-252AA) Part Marking Information
Package Information
5 Package Information
Final Datasheet V2.0
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D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches)
Package Information
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Final Datasheet V2.0
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HEXFET® Power MOSFET
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13
† Applicable version of JEDEC standard at the time of product release.
Qualification Information
Qualification Level Industrial
(per JEDEC JESD47F) †
Moisture Sensitivity Level D-Pak MSL1
RoHS Compliant Yes
Qualification Information
6 Qualification Information
Final Datasheet V2.0
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HEXFET® Power MOSFET
IRFR420TRPbF
14
Revision History
Revision History
Major changes since the last revision
Page or Reference Revision Date Description of changes
All pages 1.0 2017-08-01 First release data sheet.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and standards
concerning customer’s products and any use of the
product of Infineon Technologies in customer’s
applications.
The data contained in this document is exclusively
intended for technically trained sta. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies oice
(www.infineon.com).
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies oice.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Edition 2015-05-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
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