©2002 Fairchild Semiconductor Corporation Rev. A, March 2002
BC212LB
Absolute Maximum Ratings* TC=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current - Continuous 100 mA
TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BVCEO Collector-Emitter Breakdown Voltage IC = 2mA 50 V
BVCBO Collector-Base Breakdown Voltage IC = 10µA60V
BVEBO Emitter-Base Breakdown Voltage IE = 10µA5V
ICBO Coll ector Cut-off Current VCB = 30V 15 nA
IEBO Emitter Cut-off Current VEB = 4V 15 nA
On Characteristics*
hFE DC Current Gain VCE = 5V, IC = 10µA
VCE = 5V, IC = 2mA 40
60
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 5mA 0.6 V
VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 1.4 V
VBE(on) Base-Emitter On V oltage VCE = 5V, IC = 2mA 0.6 0.72 V
Small Signal Characteristics
Cob Output Capacitance VCE = 10V, f = 1MHz 6 pF
hFE Small Signal Current Gain VCE = 5V, IC = 2mA, f = 1KHz 60
NF Noise Figure VCE = 5V, IC = 200µA, f = 1KHz
RG = 2KΩ, BW = 200Hz 10 dB
BC212LB
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 68.
1. Emitter 2. Collector 3. Base
TO-92
1
©2002 Fairchild Semiconductor Corporation
BC212LB
Rev. A, March 2002
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
RθJC Thermal Resistance, Junction to Case 125 °C/W
Package Demensions
©2002 Fairchild Semiconductor Corporation Rev. A, March 2002
BC212LB
Dimensions in Millimeters
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2002 Fairchild Semiconductor Corporation Rev. H4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
STAR*POWE R is used under license
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