DSI45-12A
Single Diode
Standard Rectifier
13
Part number
DSI45-12A
Backside: cathode
FAV
F
VV1.23
RRM
45
1200
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI45-12A
V = V
A²s
A²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.26
R0.55 K/W
R
min.
45
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
130
P
tot
270 WT = 25°C
C
RK/W
45
1200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.57
T = 25°C
VJ
150
V
F0
V0.81T = °C
VJ
175
r
F
9.1 mΩ
V1.23T = °C
VJ
I = A
F
V
45
1.66
I = A
F
90
I = A
F
90
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
18
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
480
520
840
805
A
A
A
A
410
440
1.15
1.13
1200
FAV
180° sine
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI45-12A
Ratings
000000
YYWWZ
Logo
Part Number
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
DSI45-16AR ISOPLUS247 (2) 1600
Package
T
VJ
°C
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 70 A
per terminal
175-40
DSI45-08A TO-247AD (2) 800
TO-247
Similar Part Package Voltage class
DSI45-16A TO-247AD (2) 1600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
DSI45-12A 471895Tube 30DSI45-12AStandard
threshold voltage V0.81
mΩ
V
0 max
R
0 max
slope resistance * 6.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI45-12A
S
Ø
P
Ø
P1 D2
D1
E1
4
123
L
L1
2x
b2
2x
b
e
2x
E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
13
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI45-12A
0.001 0.01 0.1 1
200
240
280
320
360
400
23456789011
0
200
400
600
800
1000
1200
0.5 1.0 1.5
0
10
20
30
40
50
60
70
80
0 1020304050
0
20
40
60
80
0 50 100 150 200
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
I
2
t
[A
2
s]
I
FSM
[A]
I
F
[A]
V
F
]s[t]V[
P
tot
[W]
I
dAVM
[A] T
amb
[°C]
t[ms]
Z
th
[K/W]
0 50 100 150 200
0
20
40
60
80
T
C
[°C]
50 Hz, 80% V
RRM
T
VJ
= 45°C T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
t[ms]
I
dAVM
[A]
V
R
= 0 V
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
T
VJ
= 150°C
125°C
25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
i
1
2
3
4
R
i
0.033
0.095
0.164
0.258
t
i
0.0006
0.0039
0.033
0.272
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130215dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
