DSI45-12A Standard Rectifier VRRM = 1200 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d DSI45-12A Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 1200 V TVJ = 25C 40 A VR = 1200 V TVJ = 150C 1.5 mA TVJ = 25C 1.26 V 1.57 V 1.23 V IF = forward voltage drop min. 45 A IF = 90 A IF = 45 A IF = 90 A TVJ = 150 C TC = 130C 1.66 V T VJ = 175 C 45 A TVJ = 175 C 0.81 V 180 sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 9.1 m 0.55 K/W K/W 0.25 TC = 25C 270 W t = 10 ms; (50 Hz), sine TVJ = 45C 480 A t = 8,3 ms; (60 Hz), sine VR = 0 V 520 A t = 10 ms; (50 Hz), sine TVJ = 150 C 410 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 440 t = 10 ms; (50 Hz), sine TVJ = 45C 1.15 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.13 kAs TVJ = 150 C 840 As 805 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 18 pF 20130215d DSI45-12A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 175 C Weight 6 MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking Logo Part Number DateCode Assembly Code abcdef YYWWZ 000000 Assembly Line Ordering Standard Part Number DSI45-12A Similar Part DSI45-16A DSI45-16AR DSI45-08A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSI45-12A Package TO-247AD (2) ISOPLUS247 (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 471895 Voltage class 1600 1600 800 T VJ = 175C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 6.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d DSI45-12A Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d DSI45-12A Rectifier 400 80 1200 VR = 0 V 50 Hz, 80% VRRM 70 1000 360 60 50 IF 600 [A2s] 280 30 TVJ = 45C I2t IFSM 40 [A] 800 TVJ = 45C 320 [A] TVJ = 150C 400 20 240 TVJ = 150C 125C 25C 10 0 0.5 1.0 200 TVJ = 150C 200 0.001 1.5 0 0.01 V F [V ] 0.1 1 1 2 t [s] 4 5 6 7 8 910 2 Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 3 t [ms] Fig. 3 I t versus time per diode 80 80 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW DC = 1 0.5 0.4 0.33 0.17 0.08 60 Ptot 40 60 IdAVM 40 DC = 1 0.5 0.4 0.33 0.17 0.08 [A] [W] 20 20 0 0 0 10 20 30 40 50 0 IdAVM [A] 50 100 150 200 0 50 Tamb [C] 100 150 200 TC [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 0.6 0.5 0.4 Zth 0.3 [K/W] i 0.2 1 2 0.1 3 4 0.0 1 10 100 1000 Ri 0.033 0.095 ti 0.0006 0.0039 0.164 0.258 0.033 0.272 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d