T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 1 of 9
2N6796, 2N6798, 2N6800, 2N6802
Availa ble on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
Qualified Levels:
JAN, JANT X, JANTXV
and JANS*
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-
reliability applications. The 2N6798 part number is also qualified to the JANS level. These
devices are also av ai lable i n a low prof ile U-18 LCC surface mount package. Microsemi also
offers numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
TO-205AF (TO-39)
Package
Also available in:
U-18 LCC package
(surface mount)
2N6796U, 2N6798U,
2N6800U & 2N6802U
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6796, 2N6798, 2N680 0 and 2N6802 number series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.
*JANS qualification is available on 2N6798 only.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility.
• Military and other high-reliability applica tions.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
TJ & Tstg
-55 to +150
°C
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
5.0
oC/W
Total Power Dissipation
@ TA = +25 °C
(1)
PT 0.8
25
W
Drain-Source Voltage, dc
2N6798
2N6800
VDS
100
200
400
500
V
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ TC = +25 ºC
(2)
2N6796
2N6798
2N6800
2N6802
ID1
8.0
5.5
3.0
2.5
A
Drain Current, dc @ TC = +100 ºC
(2)
2N6796
2N6798
2N6800
2N6802
ID2
5.0
3.5
2.0
1.5
A
Off-State Current ( Pe ak Tota l V alue)
(3)
2N6796
2N6798
2N6800
2N6802
IDM
32
22
14
11
A (pk)
Source Current
2N6796
2N6798
2N6800
2N6802
IS
8.0
5.5
3.0
2.5
A
See notes on next page.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 2 of 9
2N6796, 2N6798, 2N6800, 2N6802
Notes: 1. Derate linearly 0.2 W/°C for TC > +25 °C.
2. The following formula derives the maximum theoretic al ID limit. ID is also limited by package and internal wires and may be limited due to
pin di am et er.
3. IDM = 4 x ID1 as calculated in note 2.
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap .
• TERMINALS: Tin/lea d solder dip nickel plate or RoHS compliant pure tin plate (com mer cia l grade only) .
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6796 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level (2N6798)
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 3 of 9
2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S our ce Br eakdown Volta ge
VGS = 0 V, ID = 1.0 mA
2N6796
2N6798
2N6800
2N6802
V(BR)DSS
100
200
400
500
V
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, TJ = +125°C
VDS ≥ VGS, ID = 0.25 mA, TJ = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125°C
IGSS1
IGSS2
±100
±200
nA
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 320 V
VGS = 0 V, VDS = 400 V
2N6796
2N6798
2N6800
2N6802
IDSS1
25
µA
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = +12 5 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = +12 5 °C
2N6796
2N6798
2N6800
2N6802
IDSS2
0.25
mA
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 5.0 A pulsed
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.0 A pulsed
VGS = 10 V, ID = 1.5 A pulsed
2N6796
2N6798
2N6800
2N6802
rDS(on)1
0.18
0.40
1.00
1.50
Ω
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 8.0 A pulsed
VGS = 10 V, ID = 5.5 A pulsed
VGS = 10 V, ID = 3.0 A pulsed
VGS = 10 V, ID = 2.5 A pulsed
2N6796
2N6798
2N6800
2N6802
rDS(on)2
0.195
0.420
1.100
1.600
Ω
Static Drain-Source On-State Resistance
TJ = +125°C
VGS = 10 V, ID = 5.0 A pulsed
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.0 A pulsed
VGS = 10 V, ID = 1.5 A pulsed
2N6796
2N6798
2N6800
2N6802
rDS(on)3
0.35
0.75
2.40
3.50
Ω
Diode Forward Voltage
VGS = 0 V, ID = 8.0 A puls e d
VGS = 0 V, ID = 5.5 A pulsed
VGS = 0 V, ID = 3.0 A pulse d
VGS = 0 V, ID = 2.5 A pulsed
2N6796
2N6798
2N6800
2N6802
VSD
1.5
1.4
1.4
1.4
V
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 4 of 9
2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYN AMIC CH AR ACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796
2N6798
2N6800
2N6802
Qg(on)
28.51
42.07
34.75
33.00
nC
Gate to Source Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796
2N6798
2N6800
2N6802
Qgs
6.34
5.29
5.75
4.46
nC
Gate to Drain Charge
VGS = 10 V, ID = 8.0 A, VDS = 50 V
VGS = 10 V, ID = 5.5 A, VDS = 50 V
VGS = 10 V, ID = 3.0 A, VDS = 50 V
VGS = 10 V, ID = 2.5 A, VDS = 50 V
2N6796
2N6798
2N6800
2N6802
Qgd
16.59
28.11
16.59
28.11
nC
SWITCHING CHARACTERISTI CS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796
2N6798
2N6800
2N6802
td(on)
30
ns
Rinse time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796
2N6798
2N6800
2N6802
tr
75
50
35
30
ns
Turn-off delay time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796
2N6798
2N6800
2N6802
td(off)
40
50
55
55
ns
Fall time
ID = 8.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 30 V
ID = 5.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 77 V
ID = 3.0 A, VGS = +10 V, RG = 7.5 Ω, VDD = 176 V
ID = 2.5 A, VGS = +10 V, RG = 7.5 Ω, VDD = 225 V
2N6796
2N6798
2N6800
2N6802
tf
45
40
35
30
ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 8.0 A
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 5.5 A
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 3.0 A
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 2.5 A
2N6796
2N6798
2N6800
2N6802
trr
300
500
700
900
ns
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 5 of 9
2N6796, 2N6798, 2N6800, 2N6802
GRAPHS
t1, RECTANGLE PULSE DURATION (seconds)
FIGURE 1 – Normalized Transient Thermal Impedance
THERMAL RESPONSE (ZӨJC)
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 6 of 9
2N6796, 2N6798, 2N6800, 2N6802
GRAPHS (continued)
FIGURE 2 – Maximum Drain Current versus Case Temperature Graphs
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
For 2N6796 For 2N6798
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
2N6800 2N6802
I
D,
DRAIN CURRENT (A)
I
D,
DRAIN CURRENT (A)
I
D,
DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 7 of 9
2N6796, 2N6798, 2N6800, 2N6802
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6796
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6798
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 8 of 9
2N6796, 2N6798, 2N6800, 2N6802
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6880
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6802
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN-TO-SOURCE- CURRENT (AMPERES)
T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 9 of 9
2N6796, 2N6798, 2N6800, 2N6802
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
3. Dimension TL measured from maximum HD.
4. Outline in this zone is not cont rolle d.
5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius
of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.305
0.355
7.75
9.02
CH
0.160
.180
4.07
4.57
HD
0.335
0.370
8.51
9.39
LC
0.200 TP
5.08 TP
6
LD 0.016 0.021 0.41 0.53 7, 8
LL
0.500
0.750
12.70
19.05
7, 8
LU
0.016
0.019
0.41
0.48
7, 8
L1
0.050
1.27
7, 8
L2
0.250
6.35
7, 8
P
.070
1.78
5
Q
0.050
1.27
4
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.72
0.86
2
TH
.009
.041
0.23
1.04
r
0.010
0.25
9
α
45° TP
45° TP
6