LESHAN RADIO COMPANY, LTD.
K1–1/2
Preliminary Information
General Purpose Transistors
NPN Silicon
These transistors are designed for general
purpose amplifier applications. They are
housed in the SOT–323/SC–70 package which
is designed for low power surface mount
applications.
2
EMITTER
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 40 Vdc
Collector–Base V oltage V CBO 75 Vdc
Emitter–Base V oltage V EBO 6.0 Vdc
Collector Current — Continuous I C600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, PD150 mW
TA = 25°C
Thermal Resistance Junction to Ambient RθJA 83 3 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBT2222AWT1 = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1) V (BR)CEO 40 — Vdc
(I C = 1.0 mAdc, I B = 0)
Collector–Base Breakdown V oltage V (BR)CBO 75 — Vdc
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown V oltage V (BR)EBO 6.0 — Vdc
(I E = 10 µAdc, I C = 0)
Base Cutoff Current I BL — 20 nAdc
(V CE = 60 Vdc, V EB = 3.0 Vdc)
Collector Cutoff Current I CEX — 10 nAdc
(V CE = 60 Vdc, V EB = 3.0 Vdc)
1. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
1
3
2
CASE 419–02, STYLE 3
SOT–323 /SC – 70
MMBT2222AWT1
LESHAN RADIO COMPANY, LTD.
K1–2/2
MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS (1)
DC Current Gain (1) hFE ––
(I C = 0.1 mAdc, V CE = 10 Vdc) 35 ––
(I C = 1.0 mAdc, V CE = 10 Vdc) 50 ––
(I C = 10 mAdc, V CE = 10 Vdc) 75 ––
(I C = 150 mAdc, V CE = 10 Vdc) 100 —
(I C = 500 mAdc, V CE = 10 Vdc) 40 ––
Collector–Emitter Saturation V oltage(1) VCE(sat) Vdc
(I C = 150 mAdc, I B = 15 mAdc) –– 0.3
(I C = 500 mAdc, I B = 50 mAdc) –– 1.0
Base–Emitter Saturation V oltage(1) V BE(sat) Vdc
(I C = 150 mAdc, I B = 15 mAdc) 0.6 1.2
(I C = 500 mAdc, I B = 50 mAdc) –– 2.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T300 –– MHz
(I C = 20 mAdc, V CE= 20Vdc, f = 100 MHz)
Output Capacitance C obo –– 8.0 pF
(V CB= 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance C ibo –– 30 pF
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance h ie 0.25 1.25 k Ω
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
V oltage Feedback Ratio h re –– 4.0 X 10 –4
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Small–Signal Current Gain h fe 75 375 —
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Output Admittance h oe 25 200 µmhos
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Noise Figure NF –– 4.0 dB
(V CE= 10 Vdc, I C = 100 µAdc, R S= 1.0 kΩ, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time (V CC = 3.0 Vdc, V BE= – 0.5 Vdc t d—10
Rise Time I C = 150 mAdc, I B1 = 15 mAdc) t r—25ns
Storage T ime (V CC = 30 Vdc, I C = 150 mAdc t s— 225 ns
Fall T ime I B1 = I B2 = 15 mAdc) t f—60
1. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
