MDS150 150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS150 is a high power COMMON BASE bipolar transistor. It is designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The transistor includes double input prematch and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25C1 350 W Maximum Voltage and Current Collector to Emitter Voltage (BVces) 55 V Emitter to Base Voltage (BVebo) 3.5 V Peak Collector Current (Ic) 10 A Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL CHARACTERISTICS Pout Pin Pg c VSWR Pd1 Trise1 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Pulse Droop Rise Time TEST CONDITIONS F = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN TYP MAX 150 20 8.75 40 3:1 0.5 100 UNITS W W dB % dB nSec FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces BVcbo hFE jc1 Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Breakdown DC - Current Gain Thermal Resistance Ie = 10 mA Ic = 30 mA Ic = 30 mA Vce = 5V, Ic = 1 A 3.5 55 55 10 V V V 0.5 C/W NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 128, repeated every 6.4mS REV B: MAY 2010 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS150 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS150 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.