NVMFS6B03NL Power MOSFET 100 V, 4 mW, 145 A, Single N-Channel Features * * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6B03NLWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 4 mW @ 10 V 100 V 145 A 6 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGS 16 V ID 145 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100C TC = 25C TC = 100C TA = 25C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State ID A 20 PD D TJ, Tstg -55 to + 175 C IS 160 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 60 A) EAS 180 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM 2.0 520 Source Current (Body Diode) N-CHANNEL MOSFET W 3.9 IDM Operating Junction and Storage Temperature S (1,2,3) 14 TA = 100C TA = 25C, tp = 10 ms W 198 99 TA = 100C TA = 25C G (4) 102 PD D (5,6) 1 DFN5 (SO-8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = 6B03NL (NVMFS6B03NL) or XXXXXX = 6B03LW (NVMFS6B03NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Symbol Value Unit Junction-to-Case - Steady State RqJC 0.76 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 38 See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2016 January, 2016 - Rev. 0 1 Publication Order Number: NVMFS6B03NL/D NVMFS6B03NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 40.9 VGS = 0 V, VDS = 80 V mV/C TJ = 25C 25 TJ = 125C 250 IGSS VDS = 0 V, VGS = 16 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) 1.0 3.0 -6.4 VGS = 10 V ID = 20 A VGS = 4.5 V V mV/C 3.3 4.0 4.8 6.0 mW CHARGES AND CAPACITANCES Input Capacitance CISS 5320 Output Capacitance COSS Reverse Transfer Capacitance CRSS 110 Total Gate Charge QG(TOT) 70.7 Threshold Gate Charge QG(TH) 9.4 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 7.4 Plateau Voltage VGP 3.3 td(ON) 19.9 VGS = 0 V, f = 1 MHz, VDS = 25 V VGS = 10 V, VDS = 50 V; ID = 50 A 1850 pF nC 17.3 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 50 V, ID = 50 A, RG = 2.5 W tf 181.7 ns 28.7 152.4 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.81 TJ = 125C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 64.7 VGS = 0 V, dIS/dt = 100 A/ms, IS = 25 A QRR 33.4 ns 31.8 99 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6B03NL TYPICAL CHARACTERISTICS 3.8 V VDS = 10 V ID, DRAIN CURRENT (A) 120 3.6 V 100 3.4 V 80 60 3.2 V 40 3.0 V 100 80 60 20 0 0 0.5 1.5 1.0 2.0 4 3 5 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 50 A TJ = 25C 8 6 4 2 0 4 5 6 8 7 9 10 VGS, GATE VOLTAGE (V) 6.0 TJ = 25C 5.5 VGS = 4.5 V 5.0 4.5 4.0 VGS = 10 V 3.5 3.0 2.5 2.0 10 30 50 90 70 110 130 150 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.E+05 2.4 ID = 50 A VGS = 10 V TJ = 150C 2.0 1.E+04 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE 2 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 2.2 1 TJ = -55C VDS, DRAIN-TO-SOURCE VOLTAGE (V) 12 3 TJ = 125C 0 3.0 2.5 TJ = 25C 40 20 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 140 VGS = 140 10 V to 4V 120 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 160 1.8 1.6 1.4 TJ = 125C 1.E+03 1.2 1.0 TJ = 85C 1.E+02 0.8 0.6 0.4 -50 -25 1.E+01 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6B03NL TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 1E+4 C, CAPACITANCE (pF) Ciss Coss 1E+3 Crss 1E+2 1E+1 VGS = 0 V TJ = 25C f = 1 MHz 1E+0 0 10 20 30 40 50 60 70 80 90 9 QT 8 7 6 5 Qgd Qgs 4 3 TJ = 25C VDS = 50 V ID = 50 A 2 1 0 100 8 0 16 24 32 40 48 56 64 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 72 100 1000 IS, SOURCE CURRENT (A) VDS = 50 V ID = 50 A VGS = 4.5 V tr tf 100 td(off) 10 td(on) TJ = 125C 10 TJ = 25C TJ = -55C 1 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 10 100 VGS 10 V Single Pulse TC = 25C 500 ms 10 1 ms 1 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 NVMFS6B03NL TYPICAL CHARACTERISTICS 100 120 IPEAK, DRAIN CURRENT (A) GFS, SMALL-SIGNAL FORWARD TRANSFER CONDUCTANCE (S) 140 100 80 60 40 20 0 25C 10 100C 1 0 40 20 60 80 100 120 140 0.1E-3 1E-3 10E-3 ID, DRAIN CURRENT (A) TAV, TIME IN AVALANCHE (sec) Figure 12. GFS vs. ID Figure 13. IPEAK vs. TAV 100 50% Duty Cycle R(t) (C/W) 10 1 20% 10% 5% 2% 1% 0.1 NVMFS6B03NL, 650 mm2, 2 oz, Cu Single Layer Pad 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 14. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping NVMFS6B03NLT1G 6B03NL DFN5 (Pb-Free) 1500 / Tape & Reel NVMFS6B03NLWFT1G 6B03LW DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel NVMFS6B03NLT3G 6B03NL DFN5 (Pb-Free) 5000 / Tape & Reel NVMFS6B03NLWFT3G 6B03LW DFN5 (Pb-Free, Wettable Flanks) 5000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO-8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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