BT151-650R - NXP - Product.Network

BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

Rev. 05 — 27 February 2009 Product data sheet

1. Product profile

1.1 General description

Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

1.2 Features and benefits

High reliability

High surge current capability

High thermal cycling performance

1.3 Applications

Ignition circuits

Motor control

Protection Circuits

Static switching

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak

off-state voltage - - 650 V

IT(AV) average on-state

current half sine wave;

Tmb ≤109 °C; see Figure 3 --7.5A

IT(RMS) RMS on-state

current half sine wave;

Tmb ≤109 °C; see Figure 1;

see Figure 2

--12A

Static characteristics

IGT gate trigger current VD=12V; T

j=25°C;

IT=100mA; see Figure 8 -215mA

Product data sheet Rev. 05 — 27 February 2009 2 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

2. Pinning information

3. Ordering information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode

SOT78

(TO-220AB; S C - 4 6 )

2 A anode

3G gate

mb mb anode

sym037

Table 3. O r dering info rmation

Type number Package

Name Description Version

BT151-650R TO-220AB;

SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

TO-220AB SOT78

Product data sheet Rev. 05 — 27 February 2009 3 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state

voltage -650V

VRRM repetitive peak reverse

voltage -650V

IT(AV) average on-state

current half sine wave; Tmb ≤109 °C; see Figure 3 -7.5A

IT(RMS) RMS on-state current half sine wave; Tmb ≤109 °C; see Figure 1; see

Figure 2 -12A

dIT/dt rate of rise of on-state

current IT=20A; I

G=50mA; dI

G/dt = 50 mA/µs - 50 A/µs

IGM peak gate current - 2 A

PGM peak gate pow e r - 5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

ITSM non-repetitive peak

on-state current half sine wave; tp= 8.3 ms; Tj(init) =25°C - 132 A

half sine wave; tp= 10 ms; Tj(init) =25°C; see

Figure 4; see Figure 5 -120A

I2t I2t for fusing tp= 10 ms; sine-wave pulse - 72 A2s

PG(AV) average gate power over any 20 ms period - 0.5 W

VRGM peak reverse gate

voltage -5V

Fig 1. RMS on-state current as a function of surge

duration; maximum values

Fig 2. RMS on-state current as a function of mounting

base temperature; maximum values

surge duration (s)

10−210110−1

001aaa954

IT(RMS)

(A)

Tmb (°C)

−50 150100050

001aaa999

IT(RMS)

(A)

Product data sheet Rev. 05 — 27 February 2009 4 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

Fig 3. T otal po wer dissipation as a function of average on-state current; maximum values

Fig 4. Non-repetitive peak on-state current as a function of pulse width fo r sinuso idal cu rrents; maxim um valu es

IT(AV) (A)

0 8642

003aab830

Ptot

(W)

2.8

2.2

1.9

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

a = 1.57

001aaa956

tp (s)

10−510−2

10−3

10−4

102

103

ITSM

(A)

dlT/dt limit

Tj initial = 25 °C max

ITITSM

Product data sheet Rev. 05 — 27 February 2009 5 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

5. Thermal characteristics

Fig 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

003aab829

120

160

ITSM

(A)

number of cycles

1 103

102

Tj initial = 25 °C max

ITITSM

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from

junction to mounting

base

see Figure 6 --1.3K/W

Rth(j-a) thermal resistance from

junction to ambient f ree

air

-60-K/W

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width

001aaa962

10−1

10−2

Zth(j-mb)

(K/W)

10−3

tp (s)

10−511010−1

10−2

10−410−3

δ =

Product data sheet Rev. 05 — 27 February 2009 6 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD=12V; T

j=25°C; I

T= 100 mA; see

Figure 8 -215mA

ILlatching current VD=12V; T

j=25°C; see Figure 9 -1040mA

IHholding current VD=12V; T

j=25°C; see Figure 10 -720mA

VTon-state voltage IT=23A; T

j= 25 °C; see Figure 11 - 1.4 1.75 V

VGT gate trigger voltage IT= 100 mA; VD=12V; T

j= 25 °C; see

Figure 12 -0.61.5V

IT= 100 mA; VD=650V; T

j= 125 °C 0.25 0.4 - V

IDoff-state current VD=650 V; T

j= 125 °C - 0.1 0.5 mA

IRreverse current VR=650V; T

j= 125 °C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage VDM =435V; T

j= 125 °C; exponential

waveform; gate open circuit 50 130 - V/µs

VDM =435V; T

j=125°C; R

GK = 100 Ω;

exponential waveform; see Figure 7 200 1000 - V/µs

tgt gate-controlled turn-on

time ITM =40A; V

D= 650 V; IG= 100 mA;

dIG/dt = 5 A/µs; Tj=25°C -2-µs

tqcommutated turn-off

time VDM =435V; T

j=125°C; I

TM =20A;

VR=25V; (dI

T/dt)M=30A/µs;

dVD/dt = 50 V/µs; RGK = 100 Ω

-70-µs

Fig 7. Critical rate of rise of off-s tat e voltag e as a

function of junction tempera tu re; minimu m

values

Fig 8. Normalized gate trigger current as a fun ction of

junction temperature

001aaa949

103

102

104

dVD/dt

(V/μs)

Tj (°C)

0 15010050

(2)

(1)

Tj (°C)

−50 150100050

001aaa952

IGT

IGT(25°C)

Product data sheet Rev. 05 — 27 February 2009 7 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

Fig 9. Normalized latching current as a function of

junction temperature Fig 10. Normalized holding current as a function of

junction temperature

Fig 11. On-state current as a function of on-state

voltage

Fig 12. Normalized gate tri gger voltage as a function of

junction temperature

Tj (°C)

−50 150100050

001aaa951

IL(25°C)

Tj (°C)

−50 150100050

001aaa950

IH(25°C)

VT (V)

021.50.5 1

001aaa959

(A)

(3)(2)(1)

Tj (°C)

−50 150100050

001aaa953

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Product data sheet Rev. 05 — 27 February 2009 8 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

7. Package outline

Fig 13. Package outline SOT78 (TO-220AB)

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

123

L1(1)

b1(2)

(3×)

b2(2)

(2×)

b(3×)

L2(1)

mounting

base

Product data sheet Rev. 05 — 27 February 2009 9 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BT151-650R_5 20090227 Product data sheet - BT151_SER_L_R_4

Modifications: •Package outline updated.

•Type number BT151-650R separated from data sheet BT151_SER_L_R_4.

BT151_SER_L_R_4 20061023 Product data sheet - BT151_SERIES_3

BT151_SERIES_3 (9397

750 13159) 20040607 Product specification - BT151_SERIES_2

BT151_SERIES_2 19990601 Product specification - BT151_SERIES_1

BT151_SERIES_1 19970901 Product specification - -

Product data sheet Rev. 05 — 27 February 2009 10 of 11

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The la test product

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extr act from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

9.3 Disclaimers

General — Information in this document is believed to be accurate an d

reliable. However, NXP Semiconductors does not give an y represent ations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Rati ngs System of I EC 60134) may cause perman ent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

9.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status [1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

NXP Semiconductors BT151-650R

SCR, 12 A, 15mA, 650 V, SOT78

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 27 February 2009

Document identifier: BT151-650R_5

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

10 Contact information. . . . . . . . . . . . . . . . . . . . . .10