2MBI400N-060 IGBT Module 600V / 400A 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Equivalent Circuit Schematic Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Continuous 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *2 Unit V V A A A A W C C V N*m N*m Rating 600 20 400 800 400 800 1500 +150 -40 to +125 AC 2500 (1min.) 3.5 4.5 Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol G1 ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Dis - - 4.5 - - - - - - - - - - - - - - 26400 5870 2670 0.6 0.2 0.6 0.2 - - E1 G2 Current control circuit . t c u d e u n i t n o c Characteristics Min. Typ. Electrical characteristics (at Tj=25C unless otherwise specified) Item E2 C1 *1 : Recommendable value : 2.5 to 3.5 N*m(M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N*m(M6) C2E1 d o r p Conditions Unit Max. 2.0 30 7.5 2.8 - - - 1.2 0.6 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=400mA VGE=15V, IC=400A VGE=0V VCE=10V f=1MHz VCC=300V IC=400A VGE=15V RG=4.7 ohm IF=400A, VGE=0V IF=400A mA A V V pF Conditions Unit s V s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*3 Characteristics Min. Typ. - - - - - 0.025 Max. 0.085 IGBT 0.15 Diode the base to cooling fin - *3 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ C/W C/W C/W E2 IGBT Module 2MBI400N-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25C Collector current vs. Collector-Emitter voltage Tj=125C 800 600 Collector current : Ic [A] Collector current : Ic [A] 800 400 200 0 0 1 2 3 4 5 0 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C VCE [V] 10 Collector-Emitter voltage : 8 6 4 2 0 0 5 10 15 20 8 . t c u 6 4 d e u n i t n o c s Di Gate-Emitter voltage : VGE [V] 2 d o r p 0 25 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=4.7 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=4.7 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1 Collector-Emitter voltage : VCE [V] 10 VCE [V] 400 200 0 Collector-Emitter voltage : 600 100 100 10 10 0 200 400 600 0 200 400 Collector current : Ic [A] Collector current : Ic [A] http://store.iiic.cc/ 600 IGBT Module 2MBI400N-060 Dynamic input characteristics Switching time vs. RG Vcc=300V, Ic=400A, VGE=15V, Tj=25C Tj=25C 500 25 400 20 300 15 200 10 100 5 100 00 0 10 1 5 10 500 1000 1500 0 2500 2000 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 1000 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Collector current : -Ic [A] (Forward current : IF [A] ) 800 600 400 200 0 0 1 2 d e u n i 50 t n o c s Di 3 Emitter-Collector voltage VECD [V] (Forward voltage : VF [V]) . t c u 100 0 4 200 400 600 Forward current : IF [A] Reversed biased safe operating area < 15V, Tj < +VGE=15V, -VGE = = 125C, RG > = 4.7 ohm Switching loss vs. Collector current Vcc=300V, RG=4.7 ohm, VGE=15V 4000 40 3500 3000 30 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [mJ/cycle] d o r p 20 10 2500 2000 1500 1000 500 0 0 0 200 400 Collector current : Ic [A] 600 0 http://store.iiic.cc/ 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 IGBT Module 2MBI400N-060 Capacitance vs. Collector-Emitter voltage Tj=25C Transient thermal resistance Capacitance : Cies, Coes, Cres [nF] Thermal resistance : R th (j-c) [C/W] 100 0.1 0.01 0.001 0.01 0.1 10 1 0 1 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Pulse width : PW [sec.] Outline Drawings, mm Di d e u n i t n o c s . t c u d o r p mass : 370g http://store.iiic.cc/ 30 35