QFET (R) FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. * * * * * * * 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V Low gate charge ( typical 40.5 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant D { D G S FQB Series G{ I2-PAK D2-PAK G D S FQI Series { S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQB19N20C / FQI19N20C 200 Units V 19.0 A 12.1 A - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C)* PD Power Dissipation (TC = 25C) TJ, TSTG TL - Pulsed 76.0 A 30 V (Note 2) 433 mJ (Note 1) 19.0 A (Note 1) 13.9 5.5 3.13 mJ V/ns W 139 1.11 -55 to +150 W W/C C 300 C (Note 1) (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient* RJA Thermal Resistance, Junction-to-Ambient Typ -- Max 0.9 Units C/W -- 40 C/W -- 62.5 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2008 Fairchild Semiconductor Corporation Rev. A1, Oct 2008 FQB19N20C/FQI19N20C October 2008 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.24 IDSS IGSSF IGSSR VDS = 200 V, VGS = 0 V -- -- 10 A VDS = 160 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.14 0.17 -- 10.8 -- S Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9.5 A gFS Forward Transconductance VDS = 40 V, ID = 9.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 830 1080 pF -- 195 255 pF -- 85 110 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 19.0 A, RG = 25 (Note 4, 5) VDS = 160 V, ID = 19.0 A, VGS = 10 V (Note 4, 5) -- 15 40 ns -- 150 310 ns -- 135 280 ns -- 115 240 ns -- 40.5 53.0 nC -- 6.0 -- nC -- 22.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 19.0 A ISM -- -- 76.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 19.0 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 19.0 A, dIF / dt = 100 A/s (Note 4) -- 208 -- ns -- 1.63 -- C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.8mH, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 19.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2008 Fairchild Semiconductor Corporation Rev. A1, Oct 2008 FQB19N20C/FQI19N20C Electrical Characteristics FQB19N20C/FQI19N20C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 o 150 C o 25 C o -55 C 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 0 10 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 0.8 0.6 VGS = 10V 0.4 VGS = 20V 0.2 Note : TJ = 25 0.0 1 10 0 10 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test -1 0 10 20 30 40 50 10 60 0.0 0.4 Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 Ciss Coss Crss 1000 Notes : 1. VGS = 0 V 2. f = 1 MHz 500 1.6 2.0 2.4 12 VGS, Gate-Source Voltage [V] 2000 1500 1.2 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitance [pF] 25 VDS = 40V 10 VDS = 100V VDS = 160V 8 6 4 2 Note : ID = 19.0A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2008 Fairchild Semiconductor Corporation 0 0 10 20 30 40 50 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A1, Oct 2008 (Continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage FQB19N20C/FQI19N20C Typical Characteristics 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 9.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 20 Operation in This Area is Limited by R DS(on) 2 100 s 15 ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 1 10 10 ms DC 0 10 Notes : o 1. TC = 25 C 10 5 o 2. TJ = 150 C 3. Single Pulse 0 25 -1 10 0 1 10 2 10 10 50 75 100 125 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature ZJC(t), Thermal Response 10 150 0 D = 0 .5 N o te s : 1 . Z J C ( t) = 0 . 9 0 /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation Rev. A1, Oct 2008 FQB19N20C/FQI19N20C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2008 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A1, Oct 2008 FQB19N20C/FQI19N20C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2008 Fairchild Semiconductor Corporation Rev. A1, Oct 2008 FQB19N20C/FQI19N20C Mechanical Dimensions D2 - PAK Dimensions in Millimeters (c)2008 Fairchild Semiconductor Corporat Rev. A1, Oct 2008 FQB19N20C/FQI19N20C Mechanical Dimensions I2 - PAK Dimensions in Millimeters (c)2008 Fairchild Semiconductor Corporation Rev. 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