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6/13/03
IRF7470
SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
40V 13m10A
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead –– 20
RθJA Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
Notes through are on page 8
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
PD- 93913D
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 40 V
VGS Gate-to-Source Voltage ± 12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.5 A
IDM Pulsed Drain Current85
PD @TA = 25°C Maximum Power Dissipation2.5 W
PD @TA = 70°C Maximum Power Dissipation1.6 W
Linear Derating Factor 0.02 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
lHigh Frequency DC-DC Converters
with Synchronous Rectification
Applications
Benefits
lUltra-Low Gate Impedance
lVery Low RDS(on) at 4.5V VGS
lFully Characterized Avalanche Voltage
and Current
IRF7470
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Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.80 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 8.0A, VGS = 0V
trr Reverse Recovery Time ––– 72 110 n s TJ = 25°C, IF = 8.0A, VR= 20V
Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 76 110 n s TJ = 125°C, IF = 8.0A, VR=20V
Qrr Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs
S
D
G
Diode Characteristics
2.3
85
A
VSD Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 300 mJ
IAR Avalanche Current––– 8.0 A
Avalanche Characteristics
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.0 13 VGS = 10V, ID = 10A
10 15 mVGS = 4.5V, ID = 8.0A
––– 14.5 30 VGS = 2.8V, ID = 5.0A
VGS(th) Gate Threshold Voltage 0.8 ––– 2.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 32V, VGS = 0V
––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 27 –– ––– S VDS = 20V, ID = 8.0A
QgTotal Gate Charge –– 29 4 4 ID = 8.0A
Qgs Gate-to-Source Charge ––– 7.9 12 nC VDS = 20V
Qgd Gate-to-Drain ("Miller") Charge ––– 8 .0 12 VGS = 4.5V
Qoss Output Gate Charge ––– 23 35 VGS = 0V, VDS = 16V
td(on) Turn-On Delay Time ––– 10 ––– V DD = 20V
trRise Time ––– 1 .9 ––– I D = 8.0A
td(off) Turn-Off Delay Time ––– 21 ––– R G = 1.8
tfFall Time ––– 3.2 ––– VGS = 4.5V
Ciss Input Capacitance ––– 3430 ––– V GS = 0V
Coss Output Capacitance ––– 690 ––– VDS = 20V
Crss Reverse Transfer Capacitance ––– 41 ––– pF ƒ = 1.0MHz
IRF7470
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
2.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
2.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
1
10
100
2.0 2.2 2.4 2.6 2.8 3.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
10A
IRF7470
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
010 20 30 40 50 60
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D8.0A
V = 20V
DS
V = 32V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
110 100
VDS, Dr ain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
IRF7470
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Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pul se Durati on ( sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 6. On-Resistance Vs. Drain Current
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF7470
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Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
200
400
600
800
Starting T , Junction Tem perature ( C)
E , Singl e Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
3.6A
6.4A
8.0A
2 4 6 8 10 12 14 16
VGS, G ate -to - Source Vol tage (V)
0.010
0.012
0.014
0.016
0.018
0.020
RDS(on), Drain-to -Source On Resistance ()
ID = 10A
0 102030405060
ID , Drain Current (A)
0.010
0.015
0.020
0.025
0.030
RDS (on) , Drain-to-Source On Resistance ()
VGS = 4. 5V
VGS = 2. 7V
VGS = 10V
IRF7470
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SO-8 Package Details
K x 4
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRIN T
0.72 (.028 )
8X
1.78 (.070)
8 X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
8°
NOTES:
1. DI MENSI ONING AND TOLERANCING PER ANS I Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DI MENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLI NE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
θ
SO-8 Part Marking
IRF7470
8www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 9.4mH
RG = 25, IAS = 8.0A.
Pulse width 400µs; duty cycle 2%.
When mounted on 1 inch square copper board, t<10 sec
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. O U TLIN E C O NFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TE RM I NAL NUMBE R 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLI NE CONFOR M S T O EIA-481 & E IA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/03