PD- 93913D IRF7470 SMPS MOSFET HEXFET(R) Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID 40V 13m 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current 1 8 S 2 7 S 3 6 4 5 S G A A D D D D SO-8 Top View Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 40 12 10 8.5 85 2.5 1.6 0.02 -55 to + 150 V V A W W W/C C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units --- --- 20 50 C/W Notes through are on page 8 www.irf.com 1 6/13/03 IRF7470 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 40 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.8 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. Max. Units --- --- V 0.04 --- V/C 9.0 13 10 15 m 14.5 30 --- 2.0 V --- 20 A --- 100 --- 200 nA --- -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 10A VGS = 4.5V, ID = 8.0A VGS = 2.8V, ID = 5.0A VDS = VGS, ID = 250A VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 27 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 29 7.9 8.0 23 10 1.9 21 3.2 3430 690 41 Max. Units Conditions --- S VDS = 20V, ID = 8.0A 44 ID = 8.0A 12 nC VDS = 20V 12 VGS = 4.5V 35 VGS = 0V, VDS = 16V --- VDD = 20V --- ID = 8.0A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 20V --- pF = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units --- --- 300 8.0 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- 2.3 A --- --- 85 --- 0.80 --- 0.65 --- 72 --- 130 --- 76 --- 150 1.3 --- 110 200 110 230 V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 8.0A, VGS = 0V TJ = 125C, IS = 8.0A, VGS = 0V TJ = 25C, IF = 8.0A, VR= 20V di/dt = 100A/s TJ = 125C, IF = 8.0A, VR=20V di/dt = 100A/s www.irf.com IRF7470 1000 100 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V 100 10 2.0V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 2.0V 10 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 150 C TJ = 25 C 10 V DS = 25V 20s PULSE WIDTH 2.6 2.8 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 2.4 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 2.2 20s PULSE WIDTH TJ = 150 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 1 2.0 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 3.0 ID = 10A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7470 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 1000 Coss 100 Crss 1 10 ID = 8.0A VDS = 32V VDS = 20V 8 6 4 2 10 0 100 0 10 30 40 50 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) TJ = 150 C 100 10 TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) C, Capacitance(pF) 10000 VGS , Gate-to-Source Voltage (V) 10 100000 2.2 10us 100us 10 1ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 10ms 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com Fig 6. On-Resistance Vs. Drain Current IRF7470 10.0 VDS VGS ID , Drain Current (A) 8.0 RD D.U.T. RG + -V DD 6.0 10V Pulse Width 1 s Duty Factor 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.030 RDS(on) , Drain-to -Source On Resistance () RDS (on) , Drain-to-Source On Resistance () IRF7470 0.025 0.020 VGS = 2.7V 0.015 VGS = 4.5V VGS = 10V 0.010 0 10 20 30 40 50 0.020 0.018 0.016 0.014 ID = 10A 0.012 0.010 2 60 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2F QGS .3F D.U.T. QGD 800 + V - DS EAS , Single Pulse Avalanche Energy (mJ) 50K 12V VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01 Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP BOTTOM ID 3.6A 6.4A 8.0A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 14c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7470 SO-8 Package Details DIM D -B- 5 8 E -A- 1 7 2 5 A 6 3 e 6X 5 H 0.25 (.010) 4 M A M e1 K x 45 -C- 0.10 (.004) B 8X 0.25 (.010) A1 L 8X 6 C 8X M C A S B S MIN MAX .0532 .0688 1.35 1.75 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e1 A MILLIMETERS MAX A1 e INCHES MIN .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.48 6.20 L 0.16 .050 0.41 1.27 0 8 0 8 RECOMMENDED FOOTPRINT NOTES: 1. 2. 3. 4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. CONTROLLING DIMENSION : INCH. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X SO-8 Part Marking www.irf.com 7 IRF7470 SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 9.4mH Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec RG = 25, IAS = 8.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 6/03 8 www.irf.com