First Sensor WS PD Data Sheet
Part Description WS7.56 TO
Order # 3001222
Features
Description
Application
RoHS
2011/65/EU
Absolute maximum ra
tings
Spectral response (23 °C
)
Max
125
100
5
10
Schematic
Electro-optical characteristics @ 23 °C
Unit
µm
mm²
nA
nF
pF
A/W
A/W
µs
µs
MΩ
MΩ
V
• Precision photometry
• Analytical instruments
• Medical equipment
• Wavelength determination for
10
1
Diode 1; V
R
= 10 mV
2000
I
PEAK
Peak DC current
mA
Active area
Min
2750 x 2750
Active area
7.56
Typ
Max
Symbol
Characteristic
Test Condition
• 7.56
mm² wavelength sensitive
detector
• Two stacked p-n-junctions
• Operating range 45
0 - 950
nm
Symbol
Unit
Min
Wavelength senisitive square active
area PIN photodiode with 7.
56 mm²
active area. Metal can type hermetic
TO5(i) package with clear glass
window.
monochromatic light
Parameter
T
OP
Operating temp
-40
°C
V
max
Max reverse voltage
V
T
STG
Storage temp
-55
°C
C
Capacitance
Diode 1; V
R
= 0 V
1
I
D
Dark current
V
R
= 5 V
10
Diode 2; λ =
890 nm
0.45
Responsivity
Diode 1; λ =
550 nm
t
R
Rise time
Diode 1; V
R
= 0 V; λ = 8
50 nm; R
L
= 1 kΩ
Diode 2; V
R
= 0 V
100
10
Diode 2; V
R
= 0 V; λ = 8
50 nm; R
L
= 1 kΩ
0.2
Shunt Resistance
100
Diode 2; V
R
= 10 mV
Breakdown voltage
I
R
= 2 µA
5
V
BR
0,00
0,05
0,10
0,15
0,20
0,25
0,30
0,35
0,40
0,45
0,50
400
450
500
550
600
650
700
750
800
850
900
950
1000
Responsivity
(A/W
)
W
avelength (nm)
Anode 1
Anode 2
Rev. 14/02/20
18 subject to change without notice
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F
irs
t
Sens
or WS
PD
Data Shee
t
First Sensor WS PD Data Sheet
Pa
rt Des
c
ri
ption
WS7.56
T
O
Part Description WS7.56 TO
Order
#
30
01
22
2
Order # 3001222
Quantum efficiency (23 °C)
Dark current as of bia
s (23 °C)
Special charactertistics:
Application hints:
Handling precautions:
• Soldering temperature max. 2
60 °C for 10
s. The device must be pr
otected against solder flux vapour.
• Minimum pin length is 2
mm.
• For ESD protection
standard precautionary measures are sufficient.
• For further
questions please refer to
document "Instructions f
or handling and processing".
The
WS7.56
wavelength
sensor
has
two
p-n
junctions
constructed
vertically
on
a
common
silicon substrate.
The
upper
and
lower
diode
have
an
enhanced
blue
and
red
response,
re
spectively.
Absorbed
radiation
between
450
and
900
nm
generates
two
photocurrents
proportion
al
to
the
wavelength
of
the
incident
light.
The
quotient
of
the
signals
is
independe
nt
of
light
level
up
to
the
saturation
point.
The
wavelength
of
monochromatic
light
or
the
spectral
density
peak
of
polychromatic light can therefore be
determined.
During
photovoltaic
operation
(V
rev
=
0
V)
the
qu
otient
of
photocurrents
f
rom
anode
1
and
a
node
2
is
constant
for
up
to
150
µW
irradiated
power.
This
range
can
be
increased
to
up
to
3
mW
when
the
reverse
bias
is
raised.
A
recomended
application
circuit
is
show
n
to
the
right.
0
20
40
60
80
400
450
500
550
600
650
700
750
800
850
900
950
1000
Quantum efficiency
(%)
W
avelength
(nm)
Anode 1
Anode 2
0,01
0,10
1,00
10,00
0
1
2
3
4
5
Dark current
(nA)
Reverse bias (V)
Anode 1
Anode 2
Rev. 14/02/20
18 subject to change without notice
www.first-sensor.com
contact@first-sensor.com Page 2/3
F
irs
t
Sens
or WS
PD
Data Shee
t
First Sensor WS PD Data Sheet
Pa
rt Des
c
ri
ption
WS7.56
T
O
Part Description WS7.56 TO
Order
#
30
01
22
2
Order # 3001222
Package dimension:
Small quantities: Foam pa
d, boxed (12 cm x 16.5 cm)
Disclaimer: Due to o
ur strive for continuous imp
rovement, specifications are sub
ject to change within our PCN po
licy according to JESD46C.
Order number 3001222, Package: TO5
Rev. 14/02/20
18 subject to change without notice
www.first-sensor.com
contact@first-sensor.com Page 3/3
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
First Sensor
:
WS7.56-TO5
3001222
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