MCC132-16io1
Phase leg
Thyristor Module
3 1 2
6 57 4
Part number
MCC132-16io1
Backside: isolated
TAV
T
VV1.08
RRM
130
1600
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Y4
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20131121aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCC132-16io1
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
V
IA
V
T
1.14
R0.23 K/W
min.
130
VV
200T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
435 WT = 25°C
C
150
1600
forward voltage drop
total power dissipation
Conditions Unit
1.36
T = 25°C
VJ
125
V
T0
V0.80T = °C
VJ
125
r
T
1.5 mΩ
V1.08T = °C
VJ
I = A
T
V
150
1.36
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA300
P
GM
Wt = 30 µs 120
max. gate power dissipation
P
T = °C
C
125
Wt = 60
P
P
GAV
W8
average gate power dissipation
C
J
211
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
4.75
5.13
81.6
79.1
kA
kA
kA
kA
4.04
4.36
112.8
109.5
1600
500 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125°C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
IA;V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
500 A
T
P
G
=0.5
di /dt A/µs;
G
=0.5
DDRM
cr
V = ⅔ V
D DRM
GK
1000
2.5 V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
150 mA
T= °C-40
VJ
2.6 V
200 mA
V
GD
gate non-trigger voltage T= °C
VJ
0.2 V
I
GD
gate non-trigger current 10 mA
V = ⅔ V
D DRM
125
latching current T= °C
VJ
300 mAI
L
25tµs
p
=30
IA;
G
= 0.5 di /dt A/µs
G
=0.5
holding current T= °C
VJ
200 mAI
H
25V= 6 V
D
R = ∞
GK
gate controlled delay tim e T= °C
VJ
2µst
gd
25
IA;
G
= 0.5 di /dt A/µs
G
=0.5
V = ½ V
D DRM
turn-off time T= °C
VJ
150 µst
q
di/dt = A/µs;10 dv/dt = V/µs;20
V =
R
100 V; I A;
T
= 160 V = ⅔ V
D DRM
tµs
p
= 200
non-repet., I = 160 A
T
125
R
thCH
0.10
thermal resistance case to heatsink K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. re pe titive reverse/forward bl ocking volt a ge
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20131121aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCC132-16io1
Ratings
Part Number
yywwAA
Date Code +
Prod. Index
Lot.No: xxxxxx
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
Circuit
Package
T
op
°C
M
D
Nm2.75
mounting torque 2.25
T
VJ
°C125
virt ua l j un ctio n temp eratu re -40
Weight g150
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
M
T
Nm5.5
terminal torque 4.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
14.0 10.0
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 300 A
per terminal
100-40
terminal to terminal
Y
4
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCC132-16io1 430579Box 6MCC132-16io1Standard
3600
ISOL
T
stg
°C125
storage temperature -40
3000
threshold voltage V0.8
mΩ
V
0 max
R
0 max
slope resistance * 0.8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Thyristor
125 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131121aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCC132-16io1
123
65
0.25 30
29
5
Ø 6.6
2.8 / 0.8M6 x 16
2.2
123
34
23.2
15
12.4
94
80 7
5
63
40
17 5
4
6
7
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = Right for pin pair 6/7) UL 758, style 3751
89
11 10
3 1 2
6 57 4
Outlines Y4
IXYS reserves the right to change limits, conditions and dimensions. 20131121aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCC132-16io1
0 25 50 75 100 125 150
T
a
[°C]
T
C
[°C]
t[ms]
t[s]
0.001 0.01 0.1 1
0
1000
2000
3000
4000
011
10
4
10
5
10
6
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
320
I
TSM
[A]
I
TAVM
[A]
0 50 100 150 200 250
0
40
80
120
160
200
240
280
320
360
400
P
tot
[W]
I
TAVM
[A]
0 25 50 75 100 125 1500 100 200 300 400 500
0
200
400
600
800
1000
1200
1400
I
2
dt
[A
2
s]
T
VJ
=45°C
180° sin
120°
60°
30°
DC
T
VJ
= 125°C
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
=125°C
R
thKA
K/W
0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8
P
tot
[W]
I
dAVM
[A] T
a
[°C]
B6
Circuit
3xMCC132 or
3x MCD132
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(perthyristorordiode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
180° sin
120°
60°
30°
DC
R
thKA
K/W
0.2
0.08
0.1
0.15
0.04
0.06
0.03
0.3
0.01 0.1 1 10
0.1
1
10
100
0.01 0.1 1 10
0.1
1
10
100
I
G
[A]
V
G
[V]
I
G
[A]
T
VJ
= 25°C
t
gd
[μs]
I
GT
(T
VJ
=-40°C)
I
GT
(T
VJ
=0°C)
I
GT
(T
VJ
=25°C)
125°C
25°C
limit
typ.
t
p
=30µs
t
p
= 500 µs
P
GM
=120W
60 W
P
GAV
=8W
I
GD
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20131121aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCC132-16io1
0 100 200 300 400
0
400
800
1200
1600
t[s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0
0.1
0.2
0.3
0.4
0.5
Z
thJC
[K/W]
I
RMS
[A]
P
tot
[W]
0 255075100125150
T
a
[°C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.1
0.2
0.3
0.4
Circuit
W3
3xMCC132 or
3xMCD132
Z
thJK
[K/W]
t[s]
DC
180°
120°
60°
30°
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
Fi
g
. 10 Transient thermal im
p
edance
j
unction to heatsink
(
p
er th
y
ristor/diode
)
RthJC for various conduction angles d:
d R
thJC
[K/W]
DC 0.230
180° 0.244
120° 0.255
60° 0.283
30° 0.321
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0095 0.001
2 0.0175 0.065
3 0.2030 0.400
RthJK for various conduction angles d:
d R
thJK
[K/W]
DC 0.330
180° 0.344
120° 0.355
60° 0.383
30° 0.421
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0095 0.001
2 0.0175 0.065
3 0.2030 0.400
4 0.1000 1.290
0.15
0.1
0.08
R
thKA
K/W
0.2
0.03
0.04
0.06
0.3
DC
180°
120°
60°
30°
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20131121aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
