10/2008
AWM6422
2.3-2.4 GHz WiMAX Power Amplier Module
Data Sheet - Rev 2.2
M18 Package
12 Pin 4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
FEATURES
• InGaP HBT Technology
• > 30 dB Gain
• 2.5 % EVM at +22 dBm (+3.3 V Supply)
• 4 % EVM at +23.5 dBm (+3.3 V Supply)
• 2.5 % EVM at +23.5 dBm (+4.2 V Supply)
• 4 % EVM at +25 dBm (+4.2 V Supply)
• High Efciency
• Integrated 25 dB Attenuator
• Integrated Output Power Detector
• 50 Matched RF Ports for Reduced External
Component Count
• RoHS Compliant 4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
APPLICATIONS
• WiMAX Tranceivers That Support the IEEE
802.16d-2004, IEEE 802.16e-2005, and the
ETSI EN301-021 Wireless standards
PRODUCT DESCRIPTION
The ANADIGICS AWM6422 WiMAX Power Amplier
is a high performance device that delivers exceptional
linearity and efciency at high levels of output power.
Designed for portable or mobile applications in the
2.3-2.4 GHz band, it supports the IEEE 802.16e-2005
wireless standard, as well as the IEEE 802.16d-2004
and ETSI EN301-021 standards.
The device requires only a nominal +3.3 V supply and
a low-current bias input. An increase in supply voltage
produces an increase in the maximum linear output
Figure 1: Functional Block Diagram
power. The integrated detector can be used to monitor
output power, and the integrated 25 dB step attenuator
enables gain control. No external circuits are required
for biasing or RF impedance matching, thus reducing
external component costs and facilitating circuit board
designs.
The AWM6422 is manufactured using advanced
InGaP HBT technology that offers state-of-the-art
reliability, temperature stability, and ruggedness. It is
offered in a 4.5 mm x 4.5 mm x 1.4 mm surface mount
module optimized for use in a 50 system.
Ste p
A t t e nua t or
P o w e r
D e t e ct o r
B i as
Con trol
S u p ply
V o l t a g e
Supply
V o l t a g e
A t t e nua t or
Con trol
D e t e ct o r
Ouput
R F I nput R F Output
Matchin g
N e two r k
B i as
V o l t a g e
Grou nd
2Data Sheet - Rev 2.2
10/2008
AWM6422
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
V
CC
RF
OUT
V
BIAS
RF
IN
DET
GND
1
GND
10
2
3
4
5
6
9
8
7
V
CC
GND
GND
GND
12
11
V
CC
V
ATTN
PIN NAME DESCRIPTION
1 VCC Supply Voltage
2RFIN RF Input
3GND Ground
4V
BIAS
Bias/Shutdown
5 VCC Supply Voltage
6 VATTN Attenuator Control
7DET Detector Output
8GND Ground
9GND Ground
10 RFOUT RF Output
11 GND Ground
12 VCC Supply Voltage
Data Sheet - Rev 2.2
10/2008
AWM6422
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions dened in the electrical specications.
PARAMETER MIN MAX UNIT COMMENTS
Supply Voltage (V
CC
) 0 +5.0 V
Bias Voltage (V
BIAS
) 0 +3.0 V
Attenuator Control Voltage (V
ATTN
) 0 +3.7 V
RF Input Power -0dBm OFDM modulated signal
ESD Rating 400
1000
-
-VHBM
CDM
MSL Level 3
4
-
-
-
-
235 °C Peak Reflow
250 °C Peak Reflow
Storage Temperature -40 +150 °C
PARAMETER MIN TYP MAX UNIT COMMENTS
Operating Frequency (f) 2300 -2400 MHz
Supply Voltage (VCC)+2.9 +3.3 +4.2 V
Bias Voltage (VBIAS)+2.80
0
+2.85
-
+2.90
+0.7 VPA"on"
PA"shut down"
Attenuator Control Voltage (VATTN)
Logic High
Logic Low
+2.3
0
-
-
+3.7
+0.7 VAttenuator enabled
Nominal gain
RF Output Power (POUT)-+23.5 -dBm OFDM Modulated Signal
Case Temperature (TC)-40 -+85 °C
4Data Sheet - Rev 2.2
10/2008
AWM6422
Table 4: Electrical Specications
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, f = 2.3 GHz, 50 Ω system)
Note:
1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted.
(2) Lower leakage current may be obtained by using an alternate application circuit. Please refer to the ANADIGICS
application note titled “AWM6423 Reduced Leakage Current in Off State.”
PARAMETER MIN TYP MAX UNIT COMMENTS
Gain 28.5 32 35 dB
Attenuator Step 23 25 27 dB
Output Power Meets Spectrum Mask -+23.5 -dBm ETSI EN301-021 Type G
EVM -
-
2.5
4
3.2
-%at +22 dBm POUT
at +23.5 dBm POUT
Output P1dB -+30 -dBm CW
Output IP3 -+41 -dBm two CW tones, +19 dBm
output per tone
Harmonics --35 -dBc at +23.5 dBm POUT
Power-Added Efficiency -20 -%at +23.5 dBm POUT
Power Detector Voltage
at +22 dBm POUT
at +14 dBm POUT
-
-
+1.3
+0.5
-
-VHigh impedance load
Quiescent Current 85 108 131 mA
Current Consumption
VCC
VCC
VBIAS
VATTN
-
-
-
-
305
340
6.8
0.2
368
-
8.0
1.0
mA
POUT = +22 dBm
POUT = +23.5 dBm
Logic High = +3.3 V
Leakage Current
(2)
-1.7 3.0 mA PA shut down (VBIAS = 0V)
Data Sheet - Rev 2.2
10/2008
AWM6422
5
Figure 3: Gain vs. Output Power
(TC = +25 °C, VCC = +2.9 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
Figure 4: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +2.9 V, VBIAS = +2.85 V, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
Figure 5: Gain vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
Figure 6: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
Figure 7: Gain vs. Output Power
(TC = +25 °C, VCC = +4.2 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
Figure 8: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +4.2 V, VBIAS = +2.85 V, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
24
25
26
27
28
29
30
31
32
33
34
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Gain (dB)
2.30 GHz
2.35 GHz
2.40 GHz
Frequency
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Uncorrected EVM (%)
2.30 GHz
2.35 GHz
2.40 GHz
Frequency
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Uncorrected EVM (%)
2.30 GHz
2.35 GHz
2.40 GHz
Frequency
24
25
26
27
28
29
30
31
32
33
34
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Gain (dB)
2.30 GHz
2.35 GHz
2.40 GHz
Frequency
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Uncorrected EVM (%)
2.30 GHz
2.35 GHz
2.40GHz
Frequency
6Data Sheet - Rev 2.2
10/2008
AWM6422
Figure 9: Gain vs. Frequency
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
POUT = +22 dBm, 54 Mbps OFDM Modulation)
Figure 10: Uncorrected EVM vs. Frequency
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
POUT = +22 dBm, 54 Mbps OFDM Modulation,
system EVM approx. 0.8 %)
Figure 11: Supply Current vs. Output Power
(TC = +25 °C, VBIAS = +2.85 V, f = 2.35 GHz,
54 Mbps OFDM Modulation)
Figure 12: Effects of Bias Voltage (VBIAS) on EVM
(TC = +25 °C, VCC = +3.3 V, f = 2.35 GHz, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
Figure 13: Detector Voltage vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
Figure 14: Effects of Supply Voltage (VCC) on
Detector Voltage (TC = +25 °C, VBIAS = +2.85 V,
f = 2.35 GHz, 54 Mbps OFDM Modulation)
24
25
26
27
28
29
30
31
32
33
34
2.28 2.30 2.32 2.34 2.36 2.38 2.40 2.42
Frequency (GHz)
Gain (dB)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
2.28 2.30 2.32 2.34 2.36 2.38 2.40 2.42
Frequency (GHz)
Uncorrected EVM (%)
100
150
200
250
300
350
400
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Icc (mA)
+2.9 V
+3.3 V
+4.2 V
Vcc
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Uncorrected EVM (%)
+2.80 V
+2.85 V
+2.90 V
V
BIAS
0.0
0.5
1.0
1.5
2.0
2.5
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Detector Voltage (V)(Vdc)
2.30 GHz
2.35 GHz
2.40 GHz
Frequency
0.0
0.5
1.0
1.5
2.0
2.5
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Detector Voltage (V)
+2.9 V
+3.3 V
+4.2 V
Vcc
Data Sheet - Rev 2.2
10/2008
AWM6422
7
Figure 15: Gain vs. Case Temperature
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
POUT = +22 dBm, 54 Mbps OFDM Modulation)
Figure 16: Effects of Case Temperature on EVM
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
54 Mbps OFDM Modulation, system EVM
approx. 0.8 %)
Figure 17: Supply Current vs. Case Temperature
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
POUT = +22 dBm, 54 Mbps OFDM Modulation)
Figure 18: Effects of Case Temperature on
Detector Voltage (VCC = +3.3 V, VBIAS = +2.85 V,
f = 2.35 GHz, 54 Mbps OFDM Modulation)
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
-50-40 -30-20 -10010 20 30 40 50 60 70 80 90
Case Temperature (deg C)
Gain (dB)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Uncorrected EVM (%)
+85 deg C
+25 deg C
-40 de
g
C
Case Temp
275
280
285
290
295
300
305
310
315
-50-40 -30-20 -10010 20 30 40 50 60 70 80 90
Case Temperature (deg C)
Icc (mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Detector Voltage (V)
+85 deg C
+25 deg C
-40 de
g
C
Case Temp
8Data Sheet - Rev 2.2
10/2008
AWM6422
APPLICATION INFORMATION
Transmit Disable and Attenuator Control
The power amplier is disabled by setting VBIAS below
+0.7 V. The step attenuator is enabled by applying a
Figure 19: Application Circuit
logic high to VATTN; the PA exhibits nominal gain when
a logic low is applied to VATTN.
GND
at slug
RF IN 2
9
1
67
12
85
4
3
VCC
VBIAS
GNDRFIN
GND
VCC
GND
VCC GND
RFOUT
VCC
VCC
RF OUT
VATTN DET
VCC
VATTN DETOUT
4.7 K
VBIAS
10
11
2.2 F
0.1 F
0.01 F1 F2.2 F
0.1 F
100 pF
Data Sheet - Rev 2.2
10/2008
AWM6422
9
Figure 20: Land Pattern
10 Data Sheet - Rev 2.2
10/2008
AWM6422
PACKAGE OUTLINE
Figure 21: M18 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module
Data Sheet - Rev 2.2
10/2008
AWM6422
11
NOTES
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
Data Sheet - Rev 2.2
10/2008
12
AWM6422
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE
RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING
AWM6422RM18P8 -40 °C to +85 °C
RoHS-compliant 12 Pin
4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
2,500 piece Tape and Reel