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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS86568_F085 N-Channel PowerTrench(R) MOSFET 60 V, 80 A, 3.5 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For current package drawing, please refer to the Fairchild web site at https://www.fairchildsemi.com/packagedrawings/PQ/ PQFN08M.pdf Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 60 Units V 20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25C 80 Pulsed Drain Current TC = 25C See Figure 4 Single Pulse Avalanche Energy (Note 2) 102 A mJ Power Dissipation 214 W Derate Above 25oC 1.43 W/oC TJ, TSTG Operating and Storage Temperature RJC Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.7 oC/W 50 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25C, L = 50uH, IAS = 64A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche. 3: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDMS86568 Device FDMS86568_F085 (c)2014 Fairchild Semiconductor Corporation FDMS86568_F085 Rev. C1 Package Power56 Reel Size 13" 1 Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMS86568_F085 N-Channel PowerTrench(R) MOSFET December 2014 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250A, VGS = 0V VDS = 60V VGS = 0V 60 - - V - - 1 A TJ = 25oC TJ = 175oC (Note 4) - - 1 mA - - 100 nA 2.0 3.0 4.0 V - 2.6 3.5 m - 4.9 6.6 m VGS = 20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V - 8 - nC Qgs Gate-to-Source Gate Charge - 23 - nC Qgd Gate-to-Drain "Miller" Charge - 9 - nC ns VDS = 30V, VGS = 0V, f = 1MHz VDD = 48V ID = 80A - 4335 - pF - 1065 - pF - 36 - pF - 2.5 - - 55 71 nC Switching Characteristics ton Turn-On Time - - 64 td(on) Turn-On Delay - 21 - ns tr Rise Time - 20 - ns td(off) Turn-Off Delay - 33 - ns tf Fall Time - 13 - ns toff Turn-Off Time - - 64 ns V VDD = 30V, ID = 80A, VGS = 10V, RGEN = 6 Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/ms VDD = 48V - 67 87 ns - 70 99 nC Note: 4: The maximum value is specified by design at TJ = 175C. Product is not tested to this condition in production. FDMS86568_F085 Rev. C1 2 www.fairchildsemi.com FDMS86568_F085 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 200 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 150 VGS = 10V CURRENT LIMITED BY SILICON 100 50 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = 10V TC = 25oC IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDMS86568_F085 Rev. C1 3 www.fairchildsemi.com FDMS86568_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.1 10ms 100ms 300 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 175oC 0 2 1 10 100 1000 300 150 50 0.1 Figure 6. Unclamped Inductive Switching Capability 200 TJ = 25oC 0.01 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V 100 STARTING TJ = 150oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 250 STARTING TJ = 25oC 10 1 0.001 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area TJ = -55oC 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 100 10 VGS = 0 V TJ = 175 oC TJ = 25 oC 1 0.1 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 300 250 80s PULSE WIDTH Tj=25oC 200 ID, DRAIN CURRENT (A) 300 ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 150 100 5V 50 0 250 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 200 150 100 5V 50 80s PULSE WIDTH Tj=175oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 9. Saturation Characteristics FDMS86568_F085 Rev. C1 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDMS86568_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 40 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 30 TJ = 175oC TJ = 25oC 20 10 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.10 ID = 5mA 1.05 1.0 0.8 1.00 0.6 0.95 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 f = 1MHz VGS = 0V 10 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage FDMS86568_F085 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10000 CAPACITANCE (pF) 1.6 Figure 12. Normalized RDSON vs. Junction Temperature VGS = VDS ID = 250A 1.2 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.8 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 2.0 10 ID = 80A 8 VDD =24V VDD = 30V VDD = 36V 6 4 2 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 60 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDMS86568_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM Awinda(R) AX-CAP(R)* BitSiCTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficentMaxTM ESBCTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FPSTM F-PFSTM FRFET(R) Global Power ResourceSM GreenBridgeTM Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM Marking Small Speakers Sound Louder and BetterTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R)* (R) tm PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM Solutions for Your SuccessTM SPM(R) STEALTHTM SuperFET(R) SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM TinyBoost(R) TinyBuck(R) TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TranSiCTM TriFault DetectTM TRUECURRENT(R)* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM VoltagePlusTM XSTM XsensTM TM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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