SIGC158T120R3L - Infineon Technologies

SIGC158T120R3L

Edited by INFINEON Technologies AI PS DD HV3, L7691B, Edition 2, 04.09.03

IGBT3 Chip

This chip is used for:

• power module

FEATURES:

• 1200V Trench + Field Stop technology

• 120µm chip

• low turn-off losses

• short tail current

• positive temperature coefficient

• easy paralleling

Applications:

• drives

Chip Type VCE ICn Die Size Package Ordering Code

SIGC158T120R3L 1200V

150A 12.56 x 12.56 mm2

sawn on foil Q67050-

A4211-A101

MECHANICAL PARAMETER:

Raster size 12.56 x 12.56

Emitter pad size ( include gate pad ) 11.04 x 11.04

Gate pad size 1.14 x 1.14

Area total / active 157.8 / 128.1 mm2

Thickness 120 µm

Wafer size 150 mm

Flat position 90 grd

Max.possible chips per wafer 86 pcs

Passivation frontside Photoimide

Emitter metallization 3200 nm AlSiCu

Collector metallization 1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond electrically conductive glue or solder

Wire bond Al, <500µm

Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm

Recommended Storage Environment store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

SIGC158T120R3L

Edited by INFINEON Technologies AI PS DD HV3, L7691B, Edition 2, 04.09.03

MAXIMUM RATINGS:

Parameter Symbol Value Unit

Collector-emitter voltage, Tj=25 °C VCE 1200 V

DC collector current, limited by Tjmax IC 1 ) A

Pulsed collector current, tp limited by Tjmax Icpuls 450 A

Gate emitter voltage VGE ±20 V

Operating junction and storage temperature Tj, Tstg -55 ... +150 °C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter Symbol Conditions min. typ. max. Unit

Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC= 6 mA 1200

Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=150A 1.35 1.65 2.05

Gate-emitter threshold voltage VGE(th) IC=6mA , VGE=VCE 5.0 5.8 6.5

Zero gate voltage collector current ICES VCE=1200V , VGE=0V 1000 µA

Gate-emitter leakage current IGES VCE=0V , VGE=20V 600 nA

Integrated gate resistor RGint 5 Ω

ELECTRICAL CHARACTERISTICS (tested at component):

Value

Parameter Symbol Conditions min. typ. max. Unit

Input capacitance Ciss 10766

Output capacitance Coss 563

Reverse transfer capacitance Crss

VCE=25V,

VGE=0V,

f=1MHz 488

SWITCHING CHARACTERISTICS (tested at component), Inductive Load

Value

Parameter Symbol Conditions 1) min. typ. max. Unit

Turn-on delay time td(on) 0.29

Rise time tr 0.05

Turn-off delay time td(off) 0.52

Fall time tf

Tj=125°C

VCC=600V,

IC=150A,

VGE=-15/15V,

RG= 2.4Ω 0.09

µs

1) values also influenced by parasitic L- and C- in measurement and package.

SIGC158T120R3L

Edited by INFINEON Technologies AI PS DD HV3, L7691B, Edition 2, 04.09.03

CHIP DRAWING:

SIGC158T120R3L

Edited by INFINEON Technologies AI PS DD HV3, L7691B, Edition 2, 04.09.03

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet tbd

DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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