BSL215C
OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor
Features
· Complementary P + N channel
· Enhancement mode
· Super Logic level (2.5V rated)
· Avalanche rated
· Qualified according to AEC Q101
· 100% lead-free; RoHS compliant
· Halogen free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified 1)
Parameter Symbol Conditions Unit
P N
Continuous drain current
IDTA=25 °C -1.5 1.5 A
TA=70 °C -1.2 1.2
Pulsed drain current
ID,pulse TA=25 °C -6 6
Avalanche energy, single pulse
EAS
P: ID=-1.5 A,
N: ID=1.5 A,
RGS=25 W
11 3.7 mJ
Gate source voltage
VGS V
Power dissipation
Ptot TA=25 °C W
Operating and storage temperature
Tj, Tstg °C
ESD class JESD22-A114-HBM
Soldering temperature
Tsolder °C
IEC climatic category; DIN IEC 68-1
Value
-55 ... 150
55/150/56
260
±12
0.5
1) Remark: only one of both transistors active
0 (<250V)
PG-TSOP6
Type
Package
Tape and Reel Information
Lead Free
Packing
BSL215C
PG-TSOP-6
H6327: 3000 pcs / reel
sPH
Yes
Non dry
4
5
6
1 2 3
P
N
VDS
-20
20
V
RDS(on),max
VGS=±4.5 V
150
140
mW
VGS=±2.5 V
280
250
ID
-1.5
1.5
A
Product Summary
Rev.2.2 page 1 2013-11-06
BSL215C
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
P
N
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage P V(BR)DSS VGS=0 V, ID=-250 µA - - -20 V
N
VGS=0 V, ID=250 µA 20 - -
Gate threshold voltage P
VGS(th) VDS=VGS, ID=-11 µA -1.2 -0.9 -0.6
N
VDS=VGS, ID=3.7 µA 0.7 0.95 1.2
Zero gate voltage drain current P
IDSS
VDS=-20 V, VGS=0 V,
Tj=25 °C
- - -1 µA
N
VDS=20 V, VGS=0 V,
Tj=25 °C
- - 1
P
VDS=-20 V, VGS=0 V,
Tj=150 °C
- - -100
N
VDS=20 V, VGS=0 V,
Tj=150 °C
- - 100
Gate-source leakage current P
N
P
RDS(on) VGS=-2.5V, ID=-1.1 A -163 280 mW
N
VGS=2.5 V, ID=0.7 A -173 250
P
VGS=-4.5V, ID=-1.5 A -102 150
N
VGS=4.5 V, ID=1.5 A -108 140
Transconductance P
gfs
|VDS|>2|ID|RDS(on)max,
ID=-1.2 A
-4.5 - S
N
|VDS|>2|ID|RDS(on)max,
ID=1.2 A
- 4 -
±100
RthJA
nA
IGSS
-
VGS=±12 V, VDS=0 V
-
Values
2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB
Drain-source on-state
resistance
Thermal resistance, junction -
ambient
-
-
250
minimal footprint 2)
K/W
Rev.2.2 page 2 2013-11-06
BSL215C
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance P
Ciss -270 346 pF
N - 110 143
Output capacitance P
Coss -110 128
N - 46 62
Reverse transfer capacitance P
Crss -94 128
N - 6.1 9
Turn-on delay time P
td(on) -6.7 ns
N - 4.1 -
Rise time P
tr-9.7 -
N - 7.6 -
Turn-off delay time P
td(off) -14.5 -
N - 6.8 -
Fall time P
tf-14.0 -
N - 1.4 -
Gate Charge Characteristics
Gate to source charge P
Qgs - -0.49 - nC
Gate to drain charge
Qgd - -1.9 -
Switching charge
Qg- -3.0 -
Gate plateau voltage
Vplateau - -1.9 -
Gate to source charge N
Qgs -0.24 -
Gate to drain charge
Qgd -0.2 -
Switching charge
Qg-0.73 -
Gate plateau voltage
Vplateau -2.2 -
VDD=10 V,
ID=1.5 A,
VGS=0 to 4.5 V
Values
VGS=0 V,
P: VDS=-10 V,
N: VDS= 10 V,
f=1 MHz
P: VDD=-10 V,
VGS=-4.5V, RG=6 W,
ID=-1.5 A
N: VDD=10 V,
VGS=4.5 V, RG=6 W,
ID=1.5 A
VDD=-10 V,
ID=-1.5 A,
VGS=0 to -5 V
Rev.2.2 page 3 2013-11-06
BSL215C
Parameter Symbol Conditions Unit
min. typ. max.
Reverse Diode
P
IS- - -0.5 A
N - - 0.5
Diode pulse current P
IS,pulse - - -6
N - - 6
Diode forward voltage P
VSD
VGS=0 V, IF=-1.5 A,
Tj=25 °C
- -0.8 -1.1 V
N
VGS=0 V, IF=1.5 A,
Tj=25 °C
-0.8 1.1
Reverse recovery time P
trr -21 -ns
N - 8.4 -
Reverse recovery charge P
Qrr - -3.7 - nC
N - 1.7 -
Values
TC=25 °C
VR=±10 V, IF=IS,
diF/dt=100 A/µs
Diode continuous forward current
Rev.2.2 page 4 2013-11-06
BSL215C
1 Power dissipation (P) 2 Power dissipation (N)
Ptot=f(TA)Ptot=f(TA)
3 Drain current (P) 4 Drain current (N)
ID=f(TA)ID=f(TA)
parameter: VGS≤-4.5 V parameter: VGS≥4.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
Ptot [W]
TA [°C]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 40 80 120 160
ID [A]
TA [°C]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
Ptot [W]
TA [°C]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 40 80 120 160
-ID [A]
TA [°C]
Rev.2.2 page 5 2013-11-06
BSL215C
5 Safe operating area (P) 6 Safe operating area (N)
ID=f(VDS); TA=25 °C; D=0 ID=f(VDS); TA=25 °C; D=0
parameter: tpparameter: tp
7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N)
ZthJA=f(tp)ZthJA=f(tp)
parameter: D=tp/Tparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-2
10-1
100
101
ID [A]
VDS [V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
102
100
101
102
103
ZthJA [K/W]
tp [s]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-2
10-1
100
101
-ID [A]
-VDS [V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
101
102
100
101
102
103
ZthJA [K/W]
tp [s]
Rev.2.2 page 6 2013-11-06
BSL215C
9 Typ. output characteristics (P) 10 Typ. output characteristics (N)
ID=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C
parameter: VGS parameter: VGS
11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N)
RDS(on)=f(ID); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
2.2 V
2.5 V
3 V
3.5 V
4.5 V
6 V
0
40
80
120
160
200
240
280
0 2 4 6 8
RDS(on) [mW]
ID [A]
1.8 V
2 V
2.3 V
2.5 V
3 V
3.5 V
4.5 V
10 V
0
1
2
3
4
5
6
7
8
0 1 2 3
ID [A]
VDS [V]
1.8 V
2 V
2.3 V
2.5 V
3 V
3.3 V
4.5 V
10 V
0
1
2
3
4
5
6
7
8
0 1 2 3
ID [A]
VDS [V]
2 V
2.5 V
2.5 V
3 V
3.3 V
4.5 V
6 V
0
40
80
120
160
200
240
280
0 2 4 6 8
RDS(on) [mW]
ID [A]
Rev.2.2 page 7 2013-11-06
BSL215C
13 Typ. transfer characteristics (P) 14 Typ. transfer characteristics (N)
ID=f(VGS); |VDS |>2 | ID| RDS(on)max ID=f(VGS); |VDS |>2 | ID| RDS(on)max
parameter: Tjparameter: Tj
15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N)
RDS(on)=f(Tj); ID=-1.5 A; VGS=-4.5 V RDS(on)=f(Tj); ID=1.5 A; VGS=4.5 V
25 °C
150 °C
0
1
2
3
4
5
6
0 1 2 3
ID [A]
VGS [V]
25 °C
150 °C
0
1
2
3
4
5
6
0 1 2 3
-ID [A]
-VGS [V]
typ
98%
0
40
80
120
160
200
240
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
typ
98%
0
40
80
120
160
200
240
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
Rev.2.2 page 8 2013-11-06
BSL215C
17 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N)
VGS(th)=f(Tj); VGS=VDS; ID=-11 µA VGS(th)=f(Tj); VGS=VDS; ID=3.7 µA
19 Typ. capacitances (P) 20 Typ. capacitances (N)
C=f(VDS); VGS=0 V; f=1 MHz C=f(VDS); VGS=0 V; f=1 MHz
Ciss
Coss
Crss
101
102
103
0 10 20
C [pF]
-VDS [V]
Ciss
Coss
Crss
100
101
102
103
0 5 10 15 20
C [pF]
VDS [V]
2%
typ
98%
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140 180
-VGS(th) [V]
Tj [°C]
typ
2%
98%
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Rev.2.2 page 9 2013-11-06
BSL215C
21 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N)
IF=f(VSD)IF=f(VSD)
parameter: Tjparameter: Tj
23 Avalanche characteristics (P) 24 Avalanche characteristics (N)
IAS=f(tAV); RGS=25 WIAS=f(tAV); RGS=25 W
parameter: Tj(start) parameter: Tj(start)
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
-IAV [A]
tAV [µs]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
IAV [A]
tAV [µs]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-2
10-1
100
101
0 0.5 1 1.5 2
-IF [A]
-VSD [V]
25 °C
150 °C
98%, 25 °C
98%, 150°C
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
IF [A]
VSD [V]
Rev.2.2 page 10 2013-11-06
BSL215C
25 Typ. gate charge (P) 26 Typ. gate charge (N)
VGS=f(Qgate); ID=-1.5 A pulsed VGS=f(Qgate); ID=1.5 A pulsed
parameter: VDD parameter: VDD
27 Drain-source breakdown voltage (P) 28 Drain-source breakdown voltage (N)
VBR(DSS)=f(Tj); ID=-250 µA VBR(DSS)=f(Tj); ID=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140 180
-VBR(DSS) [V]
Tj [°C]
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
-4 V
-10 V
-16 V
0
1
2
3
4
5
6
0 1 2 3 4 5
-VGS [V]
-Qgate [nC]
4 V
10 V
16 V
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
VGS [V]
Qgate [nC]
Rev.2.2 page 11 2013-11-06
BSL215C
BSL215C
Package Outline:
Footprint: Packaging:
Dimensions in mm
TSOP6
Rev.2.2 page 12 2013-11-06
BSL215C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.2 page 13 2013-11-06