MCMA140P1600TA
Phase leg
Thyristor Module
3 1 2
6 57 4
Part number
MCMA140P1600TA
Backside: isolated
TAV
T
VV1.28
RRM
140
1600
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
TO-240AA
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Isolation Voltage: V~
4800
IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MCMA140P1600TA
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
V
IA
V
T
1.29
R0.22 K/W
min.
140
VV
100T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
520 WT = 25°C
C
150
1600
forward voltage drop
total power dissipation
Conditions Unit
1.63
T = 25°C
VJ
140
V
T0
V0.85T = °C
VJ
140
r
T
2.8 m
V1.28T = °C
VJ
I = A
T
V
150
1.70
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA220
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
140
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
119
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
2.40
2.59
20.8
20.2
kA
kA
kA
kA
2.04
2.21
28.8
27.9
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 140°C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=140°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
IA;V = V
R = ; method 1 (linear voltage rise)
VJ
DVJ
450 A
T
P
G
=0.45
di /dt A/µs;
G
=0.45
DDRM
cr
V = V
D DRM
GK
1000
1.5 V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
150 mA
T= °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage T= °C
VJ
0.2 V
I
GD
gate non-trigger current 10 mA
V = V
D DRM
140
latching current T= °C
VJ
200 mAI
L
25s
p
=10
IA;
G
= 0.45 di /dt A/µs
G
=0.45
holding current T= °C
VJ
200 mAI
H
25V= 6 V
D
R =
GK
gate controlled delay tim e T= °C
VJ
st
gd
25
IA;
G
= 0.45 di /dt A/µs
G
=0.45
V = ½ V
D DRM
turn-off time T= °C
VJ
185 µst
q
di/dt = A/µs;10 dv/dt = V/µs;20
V =
R
100 V; I A;
T
= 150 V = V
D DRM
tµs
p
= 200
non-repet., I = 150 A
T
140
R
thCH
thermal resistance case to heatsink K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. re pe titive reverse/forward bl ocking volt a ge
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MCMA140P1600TA
Ratings
C
M
M
A
140
P
1600
TA
Part number
Thyristor (SCR)
Thyristor
(up to 1800V)
Phase leg
TO-240AA-1B
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
M
D
Nm4
mounting torque 2.5
T
stg
°C125
storage temperature -40
Weight g90
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm4
terminal torque 2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 200 A
per terminal
140-40
terminal to terminal
TO-240AA
Similar Part Package Voltage class
MCMA140P1800TA TO-240AA-1B 1800
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I 1 mA
ISOL
MCMA140P1600TA 509341Box 6MCMA140P1600TAStandard
4000
4800
ISOL
threshold voltage V0.85
m
V
0 max
R
0 max
slope resistance * 1.6
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Thyristor
140°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MCMA140P1600TA
3 1 2
6 57 4
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MCMA140P1600TA
0.001 0.01 0.1 1
800
1200
1600
2000
0 20406080100120
0
20
40
60
80
100
120
140
160
180
011
10
3
10
4
10
5
0 20 40 60 80 100 120 140 160
I
2
t
A
2
s
T
C
[°C]t[s]
0 25 50 75 100 125 150
0
40
80
120
160
P
tot
[W]
I
TSM
[A]
t[ms]
T
VJ
= 45°C
T
VJ
=140°C
I
TAVM
[A]
I
TAVM
T]A[
A
V]C°[
T
[V]
0.00.51.01.52.0
0
50
100
150
200
250
300
I
T
[A]
T
VJ
=125°C
Fig. 1 Surge overload current
I
TSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation vs. forward current and ambient temperature Fig. 5 Forward current
I
T
versus V
T
80 % V
RRM
T
VJ
=45°C
50 Hz
T
VJ
=140°C
V
R
=0V
t[s]
10
-3
10
-2
10
-1
10
0
10
1
0.00
0.04
0.08
0.12
0.16
0.20
0.24
Fi
g
. 6 Transient thermal im
p
edance
j
unction to case
Constants for Z
thJC
calculation:
iR
thi
[K/W] t
i
[s]
10.00730.0001
2 0.0128 0.031
3 0.1329 0.084
4 0.067 0.42
Z
thJC
[K/W]
T
VJ
=25°C
0.4
0.6
0.8
1.0
2.0
4.0
R
thHA
K/W
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved