March 2002
Advance Information
Copyright © Alliance Semiconductor. All rights reserved.
®
AS7C1026A
AS7C31026A
5V/3.3V 64K X 16 CMOS SRAM
3/21/02; v.0.9.8 Alliance Semiconductor P. 1 of 10
Features
• AS7C1026A (5V version)
• AS7C31026A (3.3V version)
• Industrial and commercial versions
• Organization: 65,536 words × 16 bits
• Center power and ground pins for low noise
•High speed
- 10/12/15/20 ns address access time
- 5, 6, 7, 8 ns output enable access time
• Low power consumption: ACTIVE
- 660 mW (AS7C1026A) / max @ 10 ns
- 324 mW (AS7C31026A) / max @ 10 ns
• Low power consumption: STANDBY
- 55 mW (AS7C1026A) / max CMOS I/O
- 36 mW (AS7C31026A) / max CMOS I/O
• Latest 6T 0.25u CMOS technology
• Easy memory expansion with CE, OE inputs
• TTL-compatible, three-state I/O
• JEDEC standard packaging
- 44-pin 400 mil SOJ
- 44-pin TSOP 2
- 48-ball 6 × 8 mm BGA
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
Logic block diagram
64K × 16
Array
OE
CE
WE Column decoder
Row decoder
A0
A1
A2
A3
A4
A5
A7
VCC
GND
A8
A9
A10
A11
A12
A13
A14
A15
Control circuit
I/O0–I/O7
I/O8–I/O15
UB
LB
I/O
buffer
A6
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
I/O13
I/O12
GND
VCC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
GND
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
44-Pin SOJ (400 mil), TSOP 2
21
22
A12
NC
UB
LB
I/O15
I/O14
2
A3
3
A2
4
A1
1
A4
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
43
42
41
44
A6
A7
OE
A5
AS7C1026A
AS7C31026A
Selection guide
-10 -12 -15 -20 Unit
Maximum address access time 10 12 15 20 ns
Maximum output enable access time 5678ns
Maximum operating current AS7C1026A 120 110 100 100 mA
AS7C31026A 90 80 80 80 mA
Maximum CMOS standby current AS7C1026A 10 10 10 15 mA
AS7C31026A 10 10 10 15 mA
0000048 - BGA Ball-Grid-Array Package
123456
ALB OE A0A1A2NC
BI/O8 UB A3 A4 CE I/O0
CI/O9
I/O10
A5 A6 I/O1 I/O2
DV
SS
I/O11
NC A7 I/O3 VDD
EV
DD
I/O12
NC NC I/O4 VSS
FI/O14
I/O13
A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
Pin and ball arrangement
®
AS7C1026A
AS7C31026A
3/21/02; v.0.9.8 Alliance Semiconductor P. 2 of 10
Functional description
The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as
65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for
high-performance applications.
When CE is high the devices enter standby mode. The AS7C1026A is guaranteed not to exceed 55 mW power consumption in CMOS standby
mode.
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0–I/O15 is written on the rising
edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been
disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. the chips drive I/O pins with
the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers
stay in high-impedance mode.
The devices provide multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and
read. LB controls the lower bits, I/O0–I/O7, and UB controls the higher bits, I/O8–I/O15.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply (AS7C1026A) or 3.3V supply (AS7C31026A). the
device is packaged in common industry standard packages. Chip scale BGA packaging, easy to use in manufacturing, provides the smallest
possible footprint. This 48-ball JEDEC-registered package has a ball pitch of 0.75 mm and external dimensions of 8 mm × 6 mm.
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods may affect reliability.
Key: H = High, L = Low, X = don’t care.
Absolute maximum ratings
Parameter Symbol Min Max Unit
Voltage on VCC relative to GND AS7C1026A Vt1 –0.50 +7.0 V
AS7C31026A Vt1 –0.50 +5.0 V
Voltage on any pin relative to GND Both Vt2 –0.50 VCC +0.50 V
Power dissipation Both PD–1.0W
Storage temperature (plastic) Both Tstg –65 +150 °C
Ambient temperature with VCC applied Both Tbias –55 +125 °C
DC current into outputs (low) Both IOUT –20mA
Truth table
CE WE OE LB UB I/O0–I/O7 I/O8–I/O15 Mode
H X X X X High Z High Z Standby (ISB), ISBI)
LHL LHD
OUT High Z Read I/O0–I/O7 (ICC)
LHLHLHigh ZD
OUT Read I/O8–I/O15 (ICC)
LHLLLD
OUT DOUT Read I/O0–I/O15 (ICC)
LLXLL D
IN DIN Write I/O0–I/O15 (ICC)
LLXLHD
IN High Z Write I/O0–I/O7 (ICC)
LLXHLHigh ZD
IN Write I/O8–I/O15 (ICC)
L
L
H
X
H
X
X
H
X
HHigh Z High Z Output disable (ICC)
®
AS7C1026A
AS7C31026A
3/21/02; v.0.9.8 Alliance Semiconductor P. 3 of 10
Recommended operating conditions
Parameter Device Symbol Min Nominal Max Unit
Supply voltage AS7C1026A VCC 4.5 5.0 5.5 V
AS7C31026A VCC 3.0 3.3 3.6 V
Input voltage
AS7C1026A VIH 2.2 – VCC + 0.5 V
AS7C31026A VIH 2.0 – VCC + 0.5 V
Both VIL1
1 VIL min. = –3.0V for pulse width less than tRC/2.
–0.5 – 0.8 V
Ambient operating temperature commercial TA0– 70 oC
industrial TA–40 – 85 oC
DC operating characteristics (over the operating range)
Parameter Sym Test conditions Device
-10 -12 -15 -20
UnitMin Max Min Max Min Max Min Max
Input leakage
current | ILI | VCC = Max
VIN = GND to VCC Both – 1 – 1 – 1 – 1 µA
Output leakage
current | ILO | VCC = Max
CE = VIH,
VOUT = GND to VCC
Both – 1 – 1 – 1 – 1 µA
Operating power
supply current ICC
VCC = Max, CE ≤ VIL
outputs open,
f = fMax = 1/tRC
AS7C1026A – 120 – 110 – 100 – 100 mA
AS7C31026A – 90 – 80 – 80 – 80 mA
Standby
power supply
current
ISB
VCC = Max, CE ≤ VIL,
outputs open,
f = fMax = 1/tRC
AS7C1026A – 30 – 25 – 20 – 20
mA
AS7C31026A – 30 – 25 – 20 – 20
ISB1
VCC = Max, CE ≥ VCC–0.2V,
VIN ≤ GND + 0.2V or
VIN ≥ VCC–0.2V, f = 0
AS7C1026A – 10 – 10 – 10 – 15
mA
AS7C31026A – 10 – 10 – 10 – 15
Output
voltage
VOL IOL = 8 mA, VCC = Min Both – 0.4 – 0.4 – 0.4 – 0.4 V
VOH IOH = –4 mA, VCC = Min 2.4 – 2.4 – 2.4 – 2.4 – V
Capacitance (f = 1MHz, Ta = 25 °C, VCC = NOMINAL)2
Parameter Symbol Signals Test conditions Max Unit
Input capacitance CIN A, CE, WE, OE, LB, UB VIN = 0V 5 pF
I/O capacitance CI/O I/O VIN = VOUT = 0V 7 pF
®
AS7C1026A
AS7C31026A
3/21/02; v.0.9.8 Alliance Semiconductor P. 4 of 10
Key to switching waveforms
Read waveform 1 (address controlled)
Read cycle (over the operating range)
Parameter Symbol
-10 -12 -15 -20
Unit NotesMin Max Min Max Min Max Min Max
Read cycle time tRC 10–12–15–20–ns
Address access time tAA – 10 – 12 – 15 – 20 ns 3
Chip enable (CE) access time tACE – 10 – 12 – 15 – 20 ns 3
Output enable (OE) access time tOE –5–6–7–8ns
Output hold from address change tOH 2–3–3–3–ns 5
CE Low to output in low Z tCLZ 0–0–0–0–ns4, 5
CE High to output in high Z tCHZ – 3 – 3 – 4 – 5 ns 4, 5
OE Low to output in low Z tOLZ 0–0–0–0–ns4, 5
Byte select access time tBA –5–6–7–8ns
Byte select Low to low Z tBLZ 0–0–0–0–ns4, 5
Byte select High to high Z tBHZ – 5 – 6 – 6 – 8 ns 4, 5
OE High to output in high Z tOHZ – 3 – 3 – 4 – 5 ns 4, 5
Power up time tPU 0–0–0–0–ns4, 5
Power down time tPD – 10 – 12 – 15 – 20 ns 4, 5
Undefined output/don’t careFalling inputRising input
t
OH
t
AA
t
RC
t
OH
Data
OUT
Address
Data validPrevious data valid
®
AS7C1026A
AS7C31026A
3/21/02; v.0.9.8 Alliance Semiconductor P. 5 of 10
Read waveform 2 (OE, CE, UB, LB controlled)
Write cycle (over the operating range)
Parameter Symbol
-10 -12 -15 -20
Unit NotesMin Max Min Max Min Max Min Max
Write cycle time tWC 10 – 12 – 15 – 20 – ns
Chip enable (CE) to write end tCW 8 – 10 – 12 – 12 – ns
Address setup to write end tAW 8 – 9 – 10 – 12 – ns
Address setup time tAS 0–0–0–0– ns
Write pulse width tWP 7 – 8 – 9 – 12 – ns
Write recovery time tWR 0–0–0–0– ns
Address hold from end of write tAH 0–0–0–0– ns
Data valid to write end tDW 5 – 6 – 8 – 10 – ns
Data hold time tDH 0 – 0 – 0 – 0 – ns 5
Write enable to output in high Z tWZ – 6 – 6 – 6 – 8 ns 4, 5
Output active from write end tOW 1 – 1 – 1 – 2 – ns 4, 5
Byte select low to end of write tBW 8 – 10 – 12 – 12 – ns
Data valid
t
RC
t
AA
t
BLZ
t
BA
t
OE
t
OLZ
t
OH
t
OHZ
t
HZ
t
BHZ
t
ACE
t
LZ
Address
OE
CE
LB, UB
Data
IN
AS7C1026A
AS7C31026A
®
3/21/02; v.0.9.8 Alliance Semiconductor P. 6 of 10
Write waveform 1 (WE controlled)
Write waveform 2 (CE controlled)
Address
CE
LB, UB
WE
Data
IN
Data
OUT
t
WC
t
CW
t
BW
t
AW
t
AS
t
WP
t
DW
t
DH
t
OW
t
WZ
t
WR
Data undefined high Z
Data valid
t
AH
Address
CE
LB, UB
WE
Data
IN
t
WC
t
CW
t
BW
t
WP
t
DW
t
DH
t
OW
t
WZ
t
WR
Data
OUT
Data undefined
high Z high Z
t
AS
t
AW
Data valid
t
CLZ
t
AH
®
AS7C1026A
AS7C31026A
3/21/02; v.0.9.8 Alliance Semiconductor P. 7 of 10
AC test conditions
Notes
1During V
CC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2 This parameter is sampled, but not 100% tested.
3 For test conditions, see AC Test Conditions, Figures A, B, and C.
4 These parameters are specified with CL = 5pF, as in Figures B or C. Transition is measured ± 500 mV from steady-state voltage.
5 This parameter is guaranteed, but not tested.
6WE
is High for read cycle.
7CE
and OE are Low for read cycle.
8 Address valid prior to or coincident with CE transition Low.
9 All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 C=30pF, except all high Z and low Z parameters where C=5pF.
255W C(14)
320W
GND
+3.3V
Figure C: 3.3V Output load
168W
Thevenin Equivalent:
D
OUT
+1.728V (5V and 3.3V)
255W C(14)
480W
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns
D
OUT
D
OUT
– Output load: see Figure B or Figure C.
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
AS7C1026A
AS7C31026A
®
3/21/02; v.0.9.8 Alliance Semiconductor P. 8 of 10
Package dimensions
44-pin TSOP 2
Min
(mm)
Max
(mm)
A1.2
A1 0.05
A2 0.95 1.05
b0.30 0.45
c0.127 (typical)
D18.28 18.54
E10.03 10.29
He 11.56 11.96
e0.80 (typical)
l0.40 0.60
D
He
1234567891011121314
44 43 42 41 40 39 38 37 36 35 34 33 32 31
15 16
30 29
17 18 19 20
28 27 26 25
c
l
A1
A2
e
44-pin TSOP 2
0–5
°
21
24
22
23
E
A
b
Seating
Plane
44-pin SOJ
44-pin SOJ
400 mil
Min (in) Max (in)
A0.128 0.148
A10.025 –
A20.105 1.115
B0.026 0.032
b0.015 0.020
c0.007 0.013
D1.120 1.130
E0.370 NOM
E10.395 0.405
E20.435 0.445
e0.050 NOM
e
Pin 1
A1
b
B
A
A2
E2
E1
E2
D
c
®
AS7C1026A
AS7C31026A
3/21/02; v.0.9.8 Alliance Semiconductor P. 9 of 10
Notes
1 Bump counts: 48 (8 row x 6 column).
2 Pitch: (x,y) = 0.75 mm x 0.75 mm (typ).
3 Units: millimeters.
4 All tolerance are +/- 0.050 unless otherwise specified.
5 Typ: typical.
6 Y is coplanarity: 0.10 (max).
Minimum Ty p i c a l Maximum
A–0.75–
B5.90 6.00 6.10
B1 –3.75–
C7.90 8.00 8.10
C1 –5.25–
D0.25 0.30 0.40
E– – 1.20
E1 –0.68–
E2 0.17 0.22 0.27
Y– – 0.10
48-ball BGA
Bottom View
6 5432 1 Ball A1
C1
A
B
C
D
F
G
H
J
A
B1
Side View
Top View
Ball #A1 index
C
SRAM DIE
Elastomer
B
Detail View
A
Y
Die
0.3/T
µ
p
E2
E
Die
D
E1
E2
E
*pin 1 indicator will show as
engraved circle and/or Inc. trade mark
*
®
AS7C1026A
AS7C31026A
© Copyright Alliance Sem iconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered tradem arks of Alliance. All other brand and
p
roduct names may be the tradem arks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no
responsibility for any errors that may appear in this document. The data contained herein represents Alliance’s best data and/or estimates at the time of issuance. Alliance reserves the right to
change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this
p
roduct data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or
customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to
the sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as
express agreed to in Alliance’s Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance’s Terms and
Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights, mask works rights, trademarks, or any other intellectual property rights
of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result
in significant injury to the user, and the inclusion of Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance
against all claims arising from such use.
3/21/02; v.0.9.8 Alliance Semiconductor P. 10 of 10
Ordering codes
Package \ Access time Vo l t / Te m p 10 ns 12 ns 15 ns 20 ns
Plastic SOJ, 400 mil
5V commercial AS7C1026A-10JC AS7C1026A-12JC AS7C1026A-15JC AS7C1026A-20JC
5V industrial AS7C1026A-10JI AS7C1026A-12JI AS7C1026A-15JI AS7C1026A-20JI
3.3V commercial AS7C31026A-10JC AS7C31026A-12JC AS7C31026A-15JC AS7C31026A-20JC
TSOP 2, 10.2 x 18.4 mm
5V commercial AS7C1026A-10TC AS7C1026A-12TC AS7C1026A-15TC AS7C1026A-20TC
3.3V commercial AS7C31026A-10TC AS7C31026A-12TC AS7C31026A-15TC AS7C31026A-20TC
3.3V industrial AS7C31026A-10TI AS7C31026A-12TI AS7C31026A-15TI AS7C31026A-20TI
BGA, 6 x 8 mm
5V commercial AS7C1026A-10BC AS7C1026A-12BC AS7C1026A-15BC AS7C1026A-20BC
3.3V commercial AS7C31026A-10BC AS7C31026A-12BC AS7C31026A-15BC AS7C31026A-20BC
3.3V industrial AS7C31026A-10BI AS7C31026A-12BI AS7C31026A-15BI AS7C31026A-20BI
Part numbering system
AS7C X1026 –XX X C
SRAM
prefix
Vol tage:
Blank=5V CMOS
3=3.3V CMOS
Device
number
Access
time
Package:
J=SOJ 400 mil
T=TSOP 2, 10.2 x 18.4 mm
B=BGA, 6 x 8 mm
Temperature range:
C= Commercial: 0° C to 70° C
I= Industrial: -40° C to 85° C
