Linear Hall-Effect Sensor ICs with Analog Output
Available in a Miniature, Low-Profile Surface-Mount Package
A1308 and
A1309
6
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
CHARACTERISTIC DEFINITIONS
Power-On Time. When the supply is ramped to its operating
voltage, the device output requires a finite time to react to an
input magnetic field. Power-On Time, tPO , is defined as the time
it takes for the output voltage to begin responding to an applied
magnetic field after the power supply has reached its minimum
specified operating voltage, VCC(min), as shown in Figure 1.
Delay to Clamp. A large magnetic input step may cause the
clamp to overshoot its steady-state value. The Delay to Clamp,
tCLP , is defined as the time it takes for the output voltage to settle
within 1% of its steady-state value, after initially passing through
its steady-state voltage, as shown in Figure 2.
Quiescent Voltage Output. In the quiescent state (no signifi-
cant magnetic field: B = 0 G), the output, VOUT(Q), is at a con-
stant ratio to the supply voltage, VCC, across the entire operating
ranges of VCC and Operating Ambient Temperature, TA.
Quiescent Voltage Output Drift Across Temperature
Range. Due to internal component tolerances and thermal
considerations, the Quiescent Voltage Output, VOUT(Q), may
drift due to temperature changes within the Operating Ambient
Temperature, TA. For purposes of specification, the Quiescent
Voltage Output Drift Across Temperature Range, ∆VOUT(Q) (mV),
is defined as:
∆VOUT(Q) VOUT(Q)(TA) –VOUT(Q)(25°C)
=
(1)
Sensitivity. The amount of the output voltage change is propor-
tional to the magnitude and polarity of the magnetic field applied.
This proportionality is specified as the magnetic sensitivity,
Sens (mV/G), of the device and is defined as:
OUT(B+)
OUT(B–)
Sens = (2)
where B+ is the magnetic flux density in a positive field (south
polarity) and B– is the magnetic flux density in a negative field
(north polarity).
Sensitivity Temperature Coefficient. The device sensitiv-
ity changes as temperature changes, with respect to its Sensitiv-
ity Temperature Coefficient, TCSENS. TCSENS is programmed
at 150°C (L temperature device) or at 125°C (K temperature
device), and calculated relative to the baseline sensitivity pro-
gramming temperature of 25°C. TCSENS is defined as:
SensT2 – SensT1
SensT1 T2–T1
1
TCSens =×
100 (%/°C)
(3)
where T1 is the baseline Sens programming temperature of 25°C,
and T2 is the TCSENS programming temperature of 150°C (L
temperature device) or 125°C (K temperature device).
The ideal value of Sens across the full ambient temperature
range, SensIDEAL(TA), is defined as:
SensT1 × [100 (%) + TCSENS (TA –T1
SensIDEAL(TA) =
(4)
Sensitivity Drift Across Temperature Range. Second-
order sensitivity temperature coefficient effects cause the
magnetic sensitivity, Sens, to drift from its ideal value across the
operating ambient temperature range, TA. For purposes of specifi-
cation, the Sensitivity Drift Across Temperature Range, ∆SensTC,
V
VCC
VCC(min)
VOUT
90% VOUT
0
t1= time at which power supply reaches
minimum specified operating voltage
t2=
time at which output voltage settles
within ±10% of its steady-state value
under an applied magnetic field
t1t2
tPO
V
CC
(typ)
time (µs)
Magnetic Input Signal
t1= time at which output voltage initially
reaches steady-state clamp voltage
t2= time at which output voltage settles to
within 1% of steady-state clamp voltage
V
CLPHIGH
t1t2
tCLP
VOUT
Device Output, VOUT (V)
Figure 1: Denition of Power-On Time, tPO
Figure 2: Denition of Delay to Clamp, tCLP