SUPERTEX INC Ordering Information N-Channel Enhancement-Mode Vertical DMOS FETs mers BVpss / Rosion) loony Order Number / Package . BVpas (max) (min) TO-92 Dicet 40V 0.352 8A VN2204N3 | VN2204ND 60V 0.952 8A VN2206N3 | VN2206ND 100V 0.350 BA VN2210N3_ | VN2210ND t MIL visual scresning available Features Frae from secondary breakdown Low power drive requirement Ease of paralleling Low Cigg and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain oboauaonanad Complementary N- and P-Channel devices Applications Moior contro! Converters Amplifiers Switches Power supply circuits oooaadg Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVpss Drain-to-Gate Voltage BVpes Gate-to-Source Voltage +20V Operating and Storage Temperature -55C to +150C. Soldering Temperature* 300C a Distance of 1.6 mm from case for 10 seconds. 8-87 Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicon- gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- induced secondary breakdown. Supertex Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Options (Note 1) TO-92 Note 1: See Package Outline section for discrete pinouts. aS D @M@ 87739295 0002290 2 MESTX TaSUPERTEX INC 3SE >) M@@ 4773295 0002251 4 MSTX VN22A Thermal Characteristics 1-35-25 Package 1p (continuous)* Ip (pulsed) Power Dissipation Oe Ae lop* loaw @ Ty = 25C C/W C/W TO-92 1.2A 8.0A 1.0W 170 125 1.2A 8.0A Ip (continuous) is limited by max rated T}. Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbol Parameter Min Typ Max Unit Conditions BY, in-to- VN2204 40 oe | Penoetace = Leet a V | Vox 0,ly= 10m VN2210 100 Vasuny Gate Threshold Voltage 0.8 24 Vv Ves = Vos: Ip = 10MA AVesin Change in Vegeny with Temperature -4.3 5.5 | mVPC Vas = Vos: Ip = 10MA lass Gate Body Leakage 1 100 nA Veg = + 20V, Vpg = 0 loss Zero Gate Voltage Drain Current 50 BA Vas = 0, Vpg = Max Rating 10 mA Vas = 0, Vpg = 0.8 Max Rating T, = 126C Ipjony ON-State Drain Current 3 4.5 A Veg = BV, Vpg = 25V Veg = 10V, Vpg = 25V Rosion: Static Drain-to-Source 0.4 0.5 Ves = SV, Ip =1A (%) | ON-State Resistance a Ose a Vesn OV. haa ARpsion) Change in Rosin; with Temperature 0.85 1.2 iC Veg = 10V, Ip =4A Ges Forward Transconductance 1.5 2.0 wo Vos = 25V, Ip = 2A Cigg Input Capacitance 500 Coss Common Source Output Capacitance 200 pF es nies = 25 Cass Reverse Transfer Capacitance 65 taion) Turn-ON Delay Time 10 15 Vpp = 25V t Rise Time 10 15 ns Ip =4A torr Turn-OFF Delay Time 30 50 Rg = 502 tr Fall Time 30 50 Vsp Diode Forward Voltage Drop 1.0 1.6 Vv Veg = 0, Isp = 4A tee Reverse Recovery Time 500 ns Ves = 0, Ign = TA Notes: 1; All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300ms pulse, 2% duty cycle.) 2: AIlA.C. parameters sample tested. Switching Waveforms and Test Circuit Vop 10V g0% AL NEUE ff ; 10% \ | PULSE | ov 4 | OUTPUT ton) t(OFF) | GENERATOR | A | i DUT. td(Ony | tr 'd(OFF), tf | I v INPUT | 502 oD 10% C 10% | OUTPUT i, | L wv 90%. 90% L oe a1 = = 8-88