1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line fro m the damage cause d by ESD and othe r transient s.
The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
2. Pinning information
PESD12VV1BL
Very low capacitance bidir ectional ESD protection diode
Rev. 2 — 18 March 2013 Product data sheet
Bidirectional ESD protection of one line ESD protection up to 30 kV
Low diode capacitance Cd=17pF IEC 61000-4-2; level 4 (ESD)
Rated peak puls e po we r: PPPM = 290 W IEC 61000-4-5 (surge); IPPM =7.8A
Ultra low leakage current IRM < 1 nA AEC-Q101 qualified
Computers and peripherals Portable electronics
Audio and video equipment Communication systems
Cellular handsets and accessories
Table 1. Quick reference data
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 12 V
Cddiode capacitance f = 1 MHz; VR= 0 V - 17 25 pF
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode
2 cathode
21
Transparent
top view
sym045
21
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 2 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
3. Ordering information
4. Marking
5. Limiting values
[1] Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to
IEC 61000-4-5 and IEC 61643-321).
[1] Device stressed with ten non-repetitive ESD pulses.
Tabl e 3. Ordering i nfo rmation
Type number Package
Name Description Version
PESD12VV1BL DFN1006-2 leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm SOD882
Table 4. Marking codes
Type number Marking code
PESD12VV1BL MW
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPPM rated peak pulse power [1] -290W
IPPM rated peak pulse current tp=8/20s[1] -7.8A
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 6. ESD maximum ratings
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VESD electrostatic
discharge voltage IEC 61000-4-2
(contact discharge) [1] -30kV
machine mo de l - 400 V
MIL-STD-883
(human body model) -10kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B ( human body model) > 8 kV
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 3 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
6. Characteristics
[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
Fig 1. 8/20 s pulse waveform accordin g to
IEC 61000-4-5 and IEC 61643-321 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (μs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
et
100 % IPP; 8 μs
50 % IPP; 20 μs
001aaa631
I
PP
100 %
90 %
t
30 ns 60 ns
10 %
t
r
= 0.7 ns to 1 ns
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff
voltage --12V
IRM reverse leakage current VRWM =12V - <1 10 nA
VBR breakdown voltage IR= 5 mA 14.6 15.7 16.8 V
Cddiode capacitance f = 1 MHz; V R= 0 V - 17 25 pF
VCL clamping voltage IPP =1A [1] --22V
IPPM =7.8A [1] --38V
rdyn dynamic resistance IR=10A [2] -0.7-
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 4 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
Tamb =25Cf=1MHz; T
amb =25C
Fig 3. Rated peak pulse po wer as a function of
square pulse duration; typical values Fig 4. Diode ca pacitance as a function of reverse
voltage; typical values
Fig 5. V-I characte r istics for a bidirectional ESD protection diode
aaa-002723
102
10
103
PPP
(W)
1
tp (s)
10-4 10-2
10-3
DDD
 



959
&G
S)
006aab325
-VCL -VBR -VRWM
VCL
VBR
VRWM
-IRM
IRM
-IR
IR
-IPP
IPP
-+
IPPM
-IPPM
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 5 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
Fig 6. ESD clamping test setu p and waveforms
50 Ω
Rd
Cs
DUT
(DEVICE
UNDER
TEST)
GND
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
Cs = 150 pF; Rd = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10x
ATTENUATOR
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-002726
GND
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 6 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
7. Application information
The device is designed for the pr otection of one bidirectional dat a or signal line from surge
pulses and ESD damage. The device is suitable on lines where the signal polarities are
both, positive and negative with respect to ground.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as clos e to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductor s in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 7. Application di ag ram
aaa-002737
ESD protection diode
GND
line to be protected
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 7 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 8. Package outline DFN1006-2 (SOD882)
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55
0.50
0.46
cathode marking on top side (if applicable)
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
10000
PESD12VV1BL DFN1006-2
(SOD882) 4 mm pitch, 8 mm tape and reel -315
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 8 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint DFN1006-2 (SOD882)
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.5
(2×)
0.8
(2×)
0.7
Dimensions in mm
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 9 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
12. Revision history
Table 10. Revision history
Document ID Release date Data she et status Change notice Supersedes
PESD12VV1BL v.2 20130318 Product data sheet - PESD12VV1BL v.1
Modifications: Figure 3 corrected
PESD12VV1BL v.1 20120403 Product data sheet - -
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 10 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product st atus of de vice(s) d escribed in th is docume nt may have changed since this docume nt was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
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information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
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Suitability for use in automotive applications — T his NXP
Semiconductors product has been qualified for use in automotive
applications. Unless ot herwise agreed in writing, the product is not designed,
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Applications — Applications that are described herein for any of these
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Customers are responsible for the design and ope ration of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the obj ective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] dat a sheet Production This document contains the product specification.
PESD12VV1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 18 March 2013 11 of 12
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
No offer to sell or license — Nothing in this document may be interpret ed or
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conveyance or implication of any license under any copyrights, patents or
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Export control — This document as well as the item(s) described herein
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 March 2013
Document identifier: PESD12VV1BL
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision hi story. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12