SMMBT2222AWT1G - ON Semiconductor

October, 2011 − Rev. 10

1Publication Order Number:

MMBT2222LT1/D

MMBT2222L, MMBT2222AL,

SMMBT2222AL

General Purpose Transistors

NPN Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MMBT2222L

MMBT2222AL, SMMBT2222AL

VCEO 30

Vdc

Collector−Base Voltage

MMBT2222L

MMBT2222AL, SMMBT2222AL

VCBO 60

Vdc

Emitter−Base Voltage

MMBT2222L

MMBT2222AL, SMMBT2222AL

VEBO 5.0

6.0

Vdc

Collector Current − Continuous IC600 mAdc

Collector Current − Peak (Note 3) ICM 1100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

xxx = 1P or M1B

M = Date Code*

G= Pb−Free Package

COLLECTOR

BASE

EMITTER

http://onsemi.com

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

xxx M G

MMBT2222L, MMBT2222AL, SMMBT2222AL

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222

MMBT2222A

V(BR)CEO 30

−

Vdc

Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222

MMBT2222A

V(BR)CBO 60

−

Vdc

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222

MMBT2222A

V(BR)EBO 5.0

6.0

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A

ICEX −10

nAdc

Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222

(VCB = 60 Vdc, IE = 0) MMBT2222A, SMMBT2222A

(VCB = 50 Vdc, IE = 0, TA = 125°C) MMBT2222

(VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222A, SMMBT2222A

ICBO −

−

0.01

mAdc

Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A, SMMBT2222A IEBO −100 nAdc

Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A IBL −20 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) MMBT2222A only

(IC = 150 mAdc, VCE = 10 Vdc) (Note 4)

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 4) MMBT2222

MMBT2222A, SMMBT2222A

hFE 35

100

−

300

−

Collector−Emitter Saturation Voltage (Note 4)

(IC = 150 mAdc, IB = 15 mAdc) MMBT2222

MMBT2222A, SMMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) MMBT2222

MMBT2222A, SMMBT2222A

VCE(sat) −

−

0.4

0.3

1.6

1.0

Vdc

Base−Emitter Saturation Voltage (Note 4)

(IC = 150 mAdc, IB = 15 mAdc) MMBT2222

MMBT2222A, SMMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) MMBT2222

MMBT2222A, SMMBT2222A

VBE(sat) −

0.6

−

1.3

1.2

2.6

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 5)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222

MMBT2222A, SMMBT2222A

fT250

300

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo −8.0

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222

MMBT2222A, SMMBT2222A

Cibo −

−

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

hie 2.0

0.25

8.0

1.25

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

hre −

−

8.0

4.0

X 10−4

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

hfe 50

300

375

−

MMBT2222L, MMBT2222AL, SMMBT2222AL

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic UnitMaxMinSymbol

SMALL−SIGNAL CHARACTERISTICS

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

hoe 5.0

200

mmhos

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A

rb, Cc−150

Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)

MMBT2222A, SMMBT2222A

−4.0

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td−10

Rise Time tr−25

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts−225 ns

Fall Time tf−60

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

5. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

-2 V < 2 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 kW

+30 V

200

CS* < 10 pF

+16 V

-14 V

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

-4 V

1N914

1000

100

200

300

500

700

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

hFE, DC CURRENT GAIN

TJ = 125°C

25°C

-55°C

VCE = 1.0 V

VCE = 10 V

MMBT2222L, MMBT2222AL, SMMBT2222AL

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

TJ = 25°C

IC = 1.0 mA 10 mA 150 mA 500 mA

Figure 5. Turn −On Time

IC, COLLECTOR CURRENT (mA)

100

200

t, TIME (ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

7.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300 500

500

t, TIME (ns)

5.0

7.0

100

200

300

Figure 6. Turn −Off Time

IC, COLLECTOR CURRENT (mA)

10 20 70 1005.0 7.0 30 50 200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

t′s = ts - 1/8 tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 5.0 10 20 50

0.2 0.5

100

NF, NOISE FIGURE (dB)

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 W

500 mA, RS = 200 W

100 mA, RS = 2.0 kW

50 mA, RS = 4.0 kW

f = 1.0 kHz

IC = 50 mA

100 mA

500 mA

1.0 mA

4.0

6.0

8.0

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

MMBT2222L, MMBT2222AL, SMMBT2222AL

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Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

2.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.2 0.3 0.5 0.7

Ccb

Ceb

Figure 10. Current−Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

200

300

500

fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE = 20 V

TJ = 25°C

Figure 11. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 12. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

0.01

0.1

10.10.010.001

0.2

0.3

0.5

0.7

0.8

1.0

1.1

1.3

Figure 13. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10.10.010.001

0.2

0.3

0.5

0.6

0.7

0.9

1.1

1.2

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

IC/IB = 10

150°C

−55°C

25°C0.4

0.6

0.9

1.2 IC/IB = 10

150°C

−55°C

25°C

0.4

0.8

1.0

VCE = 1 V

150°C

−55°C

25°C

Figure 14. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

-0.5

+0.5

COEFFICIENT (mV/ C)

-1.0

-1.5

-2.5

RqVC for VCE(sat)

RqVB for VBE

-2.0

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 50

MMBT2222L, MMBT2222AL, SMMBT2222AL

http://onsemi.com

Figure 15. Safe Operating Area

VCE (Vdc)

1001010.10.01

0.001

0.01

0.1

IC (A)

Single Pulse Test

@ TA = 25°C

Thermal Limit

100 ms

1 s

10 ms

1 ms

ORDERING INFORMATION

Device Specific Marking Code Package Shipping†

MMBT2222LT1G M1B SOT−23

(Pb−Free)

3000 / Tape & Reel

MMBT2222ALT1G,

SMMBT2222ALT1G

1P SOT−23

(Pb−Free)

3000 / Tape & Reel

MMBT2222LT3G M1B SOT−23

(Pb−Free)

10,000 / Tape & Reel

MMBT2222ALT3G,

SMMBT2222ALT3G

1P SOT−23

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MMBT2222L, MMBT2222AL, SMMBT2222AL

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

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MMBT2222LT1/D

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