IRG7PH28UD1PbF
IRG7PH28UD1MPbF
1 www.irf.com © 2012 International Rectifier January 8, 2013
IRG7PH28UD1PbF
TO-247AC
G
C
E
G
G
C E
G
IRG7PH28UD1MPbF
TO-247AD
G C E
Gate Collector Emitter
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRG7PH28UD1PbF TO-247AC Tube 25
IRG7PH28UD1PbF
IRG7PH28UD1MPbF TO-247AD Tube 25
IRG7PH28UD1MPbF
VCES = 1200V
IC = 15A, TC = 100°C
TJ(MAX) = 150°C
VCE(ON) typ. = 1.95V
E
G
n-channel
C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF diode
1300Vpk repetitive transient capacity
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead-free package
Benefits
Device optimized for induction heating and soft switching
applications
High efficiency due to low VCE(ON), low switching losses and
ultra-low VF
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 30
IC @ TC = 100°C Continuous Collector Current 15
ICM Pulse Collector Current, VGE = 15V 100
ILM Clamped Inductive Load Current, VGE = 20V 60
A
IF @ TC = 25°C Diode Continuous Forward Current 30
IF @ TC = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 60
VGE Continuous Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 115 W
PD @ TC = 100°C Maximum Power Dissipation 46
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300
(0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
V(BR) Transient Repetitive Transient Collector-to-Emitter Voltage 1300
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.4 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.95 2.30 V IC = 15A, VGE = 15V, TJ = 25°C
— 2.4 —
IC = 15A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 350µA
gfe Forward Transconductance — 13 — S VCE = 50V, IC = 15A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 100 µA VGE = 0V, VCE = 1200V
— 100 — VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.1 1.2 V IF = 15A
— 1.0 — IF = 15A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 60 90 IC = 15A
Qge Gate-to-Emitter Charge (turn-on) — 10 15 nCVGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 27 40 VCC = 600V
Eoff Turn-Off Switching Loss — 543 766 µJ IC = 15A, VCC = 600V, VGE = 15V
RG = 22, L = 1.0mH, TJ = 25°C
td(off) Turn-Off delay time — 229 — nsEnergy losses include tail & diode
tf Fall time — 62 — reverse recovery
Eoff Turn-Off Switching Loss — 939 — µJ IC = 15A, VCC = 600V, VGE=15V
RG = 22, L = 1.0mH, TJ = 150°C
td(off) Turn-Off delay time — 272 — ns Energy losses include tail & diode
tf Fall time — 167 — reverse recovery
Cies Input Capacitance — 1160 — VGE = 0V
Coes Output Capacitance — 55 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 30 — f = 1.0Mhz
TJ = 150°C, IC = 60A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp ≤ 1200V
Rg = 22, VGE = +20V to 0V
Notes:
V
CC = 80% (VCES), VGE = 20V, L = 25µH, RG = 22.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R
is measured at TJ of approximately 90°C.
FBSOA operating conditions only.
V
GE = 0V, TJ = 75°C, PW ≤ 10µs.
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Junction-to-Case (IGBT) ––– ––– 1.09
RθJC (Diode) Junction-to-Case (Diode) ––– ––– 1.35
°C/W
RθCS Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
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25 50 75 100 125 150
TC (°C)
0
5
10
15
20
25
30
IC (A)
25 50 75 100 125 150
TJ , Temperature (°C)
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
VGE(th), Gate Threshold Voltage
IC = 350µA
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
10 100 1000 10000
VCE
(V)
1
10
100
IC (A)
0246810
VCE
(V)
0
10
20
30
40
50
60
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
25 50 75 100 125 150
TC (°C)
0
20
40
60
80
100
120
Ptot (W)
Fig. 2 - Power Dissipation vs.
Case Temperature
0246810
VCE
(V)
0
10
20
30
40
50
60
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 3 - Typical Gate Threshold Voltage
vs. Junction Temperature
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
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0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF (V)
0.1
1
10
100
IF (A)
25°C
150°C
Fig. 8 - Typ. Diode Forward Voltage Drop
Characteristics
0246810
VCE
(V)
0
10
20
30
40
50
60
ICE (A)
VGE
= 18V
VGE
= 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
5101520
VGE
(V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 7.5A
ICE
= 15A
ICE
= 30A
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
5101520
VGE (V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 7.5A
ICE
= 15A
ICE
= 30A
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
456789101112
VGE
(V)
0
10
20
30
40
50
60
70
ICE
(A)
TJ = 150°C
TJ = 25°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
5101520
VGE (V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 7.5A
ICE
= 15A
ICE
= 30A
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
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0 5 10 15 20 25 30
IC (A)
10
100
1000
Swiching Time (ns)
tdOFF
tF
020 40 60 80 100
RG ()
10
100
1000
Swiching Time (ns)
tdOFF
tF
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V
0 5 10 15 20 25 30
IC (A)
0
400
800
1200
1600
2000
Energy (µJ)
EOFF
0 20406080100
Rg ()
800
1000
1200
1400
1600
1800
Energy (µJ)
EOFF
Fig. 15 - Typ. Energy Loss vs. RG
TJ =
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 15A; VGE = 15V
0100 200 300 400 500 600
VCE
(V)
1
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 10203040506070
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE
, Gate-to-Emitter Voltage (V)
VCES
= 600V
VCES
= 400V
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 15A
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
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1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Ri (°C/W) i (sec)
0.00756 0.000005
0.56517 0.000677
0.54552 0.003514
0.25085 0.019551
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri (°C/W) i (sec)
0.015352 0.000008
0.360775 0.000223
0.431394 0.002475
0.282479 0.01715
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
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0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
Switching Loss
Fig.C.T.3 - Switching Loss Circuit
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
Fig.C.T.4 - BVCES Filter Circuit
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
-5
0
5
10
15
20
25
30
35
40
-100
0
100
200
300
400
500
600
700
800
-0.5 0 0.5 1
I
CE
(A)
V
CE
(V)
time(µs)
90% ICE
5% VCE
5% ICE
Eoff Loss
tf
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
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TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
ASSEMBLY YEAR 0 = 2000
ASSEM BLED O N W W 35, 2000
IN THE ASSEMBLY LINE "H"
EXAM PLE: THIS IS AN IRGP30B120KD-E
LOT CO DE 5657
WITH ASSEMBLY PART NUMBER
DATE CODE
IN T E R N A T IO N A L
RECTIFIER
LOG O
035H
5 6 5 7
WEEK 35
LINE H
LOT CO DE
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
2x
c
"A"
"A"
E
E2/2
Q
E2
2X
L1
L
D
A
e
2x b2 3x b
LEAD TIP
SEE
VIEW "B"
b4
B
A
Ø .010 BA
A2
A1
Ø .010 BA
D1
S
E1
THERMAL PAD
-A-
Ø P
Ø .010 BA
VIEW: "B"
SECTION: C-C, D-D, E-E
(b, b2, b4)
(c)
BASE META
L
PLATING
VIEW: "A" - "A"
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
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IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Qualification Level Industrial†
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-247AC N/A
RoHS Compliant Yes
TO-247AD N/A
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
