Si photodiodes S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications High UV sensitivity (quartz window type): QE 75 % (=200 nm) Analytical equipment Suppressed IR sensitivity Optical measurement equipment, etc. Low dark current Structure / Absolute maximum ratings Type No. S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR S1227-1010BQ S1227-1010BR Package Photosensitive area size Effective photosensitive area (mm) (mm) (mm2) 2.7 x 15 1.1 x 5.9 5.9 6 x 7.6 2.4 x 2.4 5.7 8.9 x 10.1 5.8 x 5.8 33 15 x 16.5 10 x 10 100 Window material Quatz Resin potting Quatz Resin potting Quatz Resin potting Quatz Resin potting Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR max (V) (C) (C) 5 -20 to +60 -20 to +80 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Type No. 200 nm p (nm) S1227-16BQ 190 to 1000 S1227-16BR 340 to 1000 S1227-33BQ 190 to 1000 S1227-33BR 340 to 1000 S1227-66BQ 190 to 1000 S1227-66BR 340 to 1000 S1227-1010BQ 190 to 1000 S1227-1010BR 340 to 1000 Min. Typ. (nm) 720 Short circuit Terminal Dark Shunt Rise current capacitance resistance current Temp. time Isc Ct ID Rsh coefficient tr 100 lx VR=10 mV TCID VR=0 V VR=10 mV VR=0 V He-Ne Min. Typ. Max. (G) RL=1 k f=10 kHz Laser 633 Min. Typ. nm (A) (A) (pA) (times/C) (s) (pF) 0.34 2.0 3.2 5 0.5 170 2 20 0.39 2.2 3.7 0.34 2.0 3.0 5 0.5 160 2 20 0.39 2.2 3.7 1.12 0.34 11 16 20 2 950 0.5 5 0.39 13 19 0.34 32 44 50 7 3000 0.2 2 0.39 36 53 Photosensitivity S (A/W) Spectral Peak response sensitivity range wavelength p 0.36 0.43 0.36 0.43 0.36 0.43 0.36 0.43 0.10 0.10 0.10 0.10 - 0.12 0.12 0.12 0.12 - www.hamamatsu.com Noise equivalent power NEP (W/Hz1/2) 2.5 x 10-15 2.1 x 10-15 2.5 x 10-15 2.1 x 10-15 5.0 x 10-15 4.2 x 10-15 8.0 x 10-15 6.7 x 10-15 1 Si photodiodes S1227 series Spectral response S1227-BQ series S1227-BR series (Typ. Ta=25 C) 0.7 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 190 (Typ. Ta=25 C) 0.7 0.5 0.4 0.3 0.2 0.1 400 600 800 0 190 1000 Wavelength (nm) 400 600 800 1000 Wavelength (nm) KSPDB0094EC KSPDB0307EA Photosensitivity temperature characteristics (Typ. ) +1.5 100 pA +1.0 +0.5 (Typ. Ta=25 C) 1 nA Dark current Temperature coefficient (%/C) Dark current vs. reverse voltage S1227-1010BQ/BR S1227-66BQ/BR 10 pA 1 pA 0 S1227-33BQ/BR S1227-16BQ/BR -0.5 190 400 600 800 1000 100 fA 0.01 0.1 1 10 Reverse voltage (V) Wavelength (nm) KSPDB0030EB KSPDB0096EB 2 Si photodiodes S1227 series Dimensional outlines (unit: mm) Hole (2 x) 0.8 Photosensitive area 1.1 x 5.9 Photosensitive area 1.1 x 5.9 Photosensitive surface 15 0.15 Resin 13.5 0.13 6.2 6.2 0.5 0.85 12.2 0.35 13.5 0.13 1.5 0.1 Photosensitive surface 1.5 0.1 15 0.15 Quartz window 0.5 Lead 0.5 Lead 2.7 0.1 Hole (2 x) 0.8 S1227-16BR 2.7 0.1 S1227-16BQ Anode terminal mark Anode terminal mark 8.5 0.2 8.5 0.2 The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0095EB KSPDA0094EB S1227-33BQ S1227-33BR 6.0 0.1 Photosensitive area 2.4 x 2.4 6.6 0.3 Anode terminal mark 4.5 0.2 0.65 10.5 0.5 Lead 6.6 0.3 Anode terminal mark KSPDA0096EB 4.5 0.2 5.0 0.3 10.5 0.35 Resin 5.0 0.3 0.5 Lead 2.0 0.1 Photosensitive surface 2.0 0.1 0.1 0.75 0.35 Quartz window Photosensitive surface 7.6 0.1 6.0 0.1 Photosensitive 7.6 0.1 area 2.4 x 2.4 The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0097EB 3 Si photodiodes S1227 series S1227-66BQ 10.1 0.1 2.0 0.1 8.9 0.1 10.5 0.3 0.65 Resin 0.5 Lead 10.5 0.1 0.75 0.5 Lead 2.0 0.1 Photosensitive surface Photosensitive Quartz window surface 0.3 10.1 0.1 Photosensitive area 5.8 x 5.8 8.9 0.1 Photosensitive area 5.8 x 5.8 S1227-66BR 9.2 0.3 9.2 0.3 7.4 0.2 7.4 0.2 Anode terminal mark 8.0 0.3 8.0 0.3 Anode terminal mark The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0098EB KSPDA0099EB 16.5 0.2 Photosensitive area 10 x 10 15.0 0.15 0.5 Lead 15.1 0.3 15.1 0.3 12.5 0.2 12.5 0.2 13.7 0.3 Anode terminal mark 13.7 0.3 Anode terminal mark 10.5 0.3 10.5 0.5 Lead 2.15 0.1 Photosensitive surface Resin 2.15 0.1 0.1 Quartz window 0.9 0.3 Photosensitive surface 16.5 0.2 0.8 Photosensitive area 10 x 10 S1227-1010BR 15.0 0.15 S1227-1010BQ The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0100EB KSPDA0101EB 4 Si photodiodes S1227 series Information described in this material is current as of November, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1036E06 Nov. 2012 DN 5