LT4295
4
Rev. B
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SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Gate Outputs
PG, SG Output High Level I = –1mA lVCC –0.1 V
PG, SG Output Low Level I = 1mA l1 V
PG Rise Time, Fall Time PG = 1000pF 15 ns
SG Rise Time, Fall Time SG = 400pF 15 ns
Current Sense/Overcurrent
VFAULT Overcurrent Fault Threshold VISEN+ – VISEN–l125 140 155 mV
ΔVSENSE/
ΔVITHB
Current Sense Comparator Threshold with
Respect to VITHB
l–130 –111 –92 mV/V
VITHB(OS) VITHB Offset l3.03 3.17 3.33 V
Timing
fOSC Default Switching Frequency ROSC Pin Open l 200 214 223 kHz
Switching Frequency 45.3kΩ from ROSC to GND l280 300 320 kHz
fT2P T2P Signal Frequency fSW/256
T2P Duty Cycle in PoE Operation (Note 7) After 4-Event Classification
After 5-Event Classification
(RCLASS++ Has Resistor to GND)
50
25 %
%
T2P Duty Cycle in Auxiliary Supply
Operation (Note 7) V(AUX) > VAUXT, and RCLASS++ Has Resistor to
GND 25 %
tMIN Minimum PG On Time l175 250 330 ns
DMAX Maximum PG Duty Cycle l63 66 70 %
tPGDELAY PG Turn-On Delay-Flyback
PG Turn-On Delay-Forward
5.23kΩ from FFSDLY to GND
52.3kΩ from FFSDLY to GND
10.5kΩ from FFSDLY to VCC
52.3kΩ from FFSDLY to VCC
45
171
92
391
ns
ns
ns
ns
tFBDLY Feedback Amp Enable Delay Time 350 ns
tFB Feedback Amp Sense Interval 550 ns
tPGSG PG Falling to SG Rising Delay Time-Flyback
PG Falling to SG Falling Delay Time-
Forward
Resistor from FFSDLY to GND
10.5kΩ from FFSDLY to VCC
52.3kΩ from FFSDLY to VCC
20
67
301
ns
ns
ns
tSTART Start Timer (Note 6) Delay After Power Good l80 86 93 ms
tFAULT Fault Timer (Note 6) Delay After Overcurrent Fault l80 86 93 ms
IMPS MPS Current l10 12 14 mA
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TJ = 25°C. VVPORT = VHSSRC = VVIN = 40V, VVCC = VCCREG, ROSC, PG, and SG Open,
RFFSDLY = 5.23kΩ to GND. AUX connected to GND unless otherwise specified. (Note 2)
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2. All voltages with respect to GND unless otherwise noted. Positive
currents are into pins; negative currents are out of pins unless otherwise
noted.
Note 3. This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature can exceed 150°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 4. Detection signature resistance specifications do not include
resistance added by the external diode bridge which can add as much as
1.1kΩ to the port resistance.
Note 5. IGPU available in PoE powered operation. That is, available after
V(VPORT) > VHSON and V(AUX) < VAUXT, over the range where V(VPORT) is
between VHSOFF and 60V.
Note 6. Guaranteed by design, not subject to test.
Note 7. Specified as the percentage of the period which T2P is low
impedance with respect to VCC.