LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* AC input response
* High input current
( IF : MAX. 150mA )
* High input-output isolation voltage
( Viso = 5,000Vrms )
* Low collector dark current
( ICEO : MAX. 10-7A at VCE = 20V )
* Current transfer ratio
( CTR : MIN. 20% at IF = ±100mA, VCE = 2V )
* Dual-in-line package :
LTV-814H : 1-channel type
LTV-824H : 2-channel type
LTV-844H : 4-channel type
* Wide lead spacing package :
LTV-814HM : 1-channel type
LTV-824HM : 2-channel type
LTV-844HM : 4-channel type
* Surface mounting package :
LTV-814HS : 1-channel type
LTV-824HS : 2-channel type
LTV-844HS : 4-channel type
* Tape and reel packaging :
LTV-814HS-TA1, LTV-824HS-TA1
* UL approved ( No. E113898 ) only 814H
* TUV approved ( No. R9653630 )
* CSA approved ( No. CA91533 )
* VDE approved ( No. 094722 ) only 814H
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 1 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-814H :
LTV-824H :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 2 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-844H :
LTV-814HM :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 3 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-824HM :
LTV-844HM :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 4 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-814HS :
LTV-824HS :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiw an, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 5 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-844HS :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 6 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
LTV-814HS-TA1 :
LTV-824HS-TA1 :
Description Symbol Dimensions in mm ( inches )
Tape wide W 16 ± 0.3 ( .63 )
Pitch of sprocket holes P0 4 ± 0.1 ( .15 )
Distance of compartment F
P2 7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1 12 ± 0.1 ( .472 )
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 7 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER SYMBOL RATING UNIT
Forward Current IF ±150 mA
INPUT Power Dissipation P 230 mW
Collector - Emitter Voltage VCEO 35 V
Emitter - Collector Voltage VECO 6 V
Collector Current IC 80 mA
OUTPUT
Collector P ower Dissipation PC 160 mW
T otal Power Dissipation Ptot 320 mW
*1 Isolation Voltage Viso 5,000 Vrms
Operating Temperature Topr -30 ~ +100 °C
Storage Temperature Tstg -55 ~ +125 °C
*2 Soldering Temperature Tsol 260 °C
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 8 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Forward Voltage VF — 1.4 1.7 V
IF=±100mA
INPUT Terminal Capacitance Ct — 50 400 pF V=0, f=1KHz
Collector Dark Current ICEO — — 100 nA VCE=20V, IF=0
Collector-Emitter
Breakd own Voltage BVCEO 35 — — V
IC=0.1mA
IF=0
OUTPUT
Emitter-Collector
Breakd own Voltage BVECO 6 — — V
IE=10µA
IF=0
Collector Current IC 20 — 80 mA
* Current Transfer Ratio CTR 20 — 80 %
IF=±100mA
VCE=2V
Collector-Emitter
Saturation Voltage VCE(sat) — 0.1 0.2 V
IF=±100mA
IC=1mA
Isolation Resistance Riso 5×1010 1×1011 — Ω DC500V
40 ~ 60% R.H.
Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz
Cut-Off Frequency fc 15 80 — KHz
VCE=5V, IC=2mA
RL=100Ω, -3dB
Response Time (Rise) tr — 4 18
µs
TRANSFER
CHARACTERISTICS
Response Time (Fall) tf — 3 18
µs
VCE=2V, IC=2mA
RL=100Ω
* CTR I
I100%
C
F
=×
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 9 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current Fig.2 Collector Power Dissipation vs.
Ambient Temper ature
Fig.4 Forwa rd Cur rent vs. Forward
Fig.5 Current Transfer Rat io
vs. Forwar d Cur rent Fig.6 Col lector Current vs.
Collector-emitter Voltage
F
FCE
F
F
0
T a= 75 C
50 C 25 C
0 C
-25 C
V = 5V
T a= 25 C
CE T a= 25 C
Pc(MAX.)
50mA
100mA
10mA
F
I = 150mA
20mA
Forward current I (mA)
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
Collector power dissipation Pc (mW)
Forward voltage V (V)
Forward current I (mA)
Current transfer ratio CTR (%)
Collector current Ic (mA)
Collector-emitter voltage V (V)
Forward current I (mA)
Fig.3 Collec tor-emitter Sat uration
Voltage vs. Forward Current
CE
00
T a= 25 C
Ic= 1mA
2mA
3mA
5mA
7mA
10mA
20mA 30mA
40mA
Collector-emitter saturation voltage
V (sat) (V)
Forward current I (mA)
F
vs. Ambient Temperature
oo
o
o
o
-30
00 25 50 75 100 125
50
100
150
160
200
0
10.5 1.51.0 2.0 2.5 3.0
2
5
10
20
50
100
200
500
20 40 60 10080
2
4
6
8
10
0.1
0
10
20
30
40
50
60
70
80
1 2 5 20 50 2000.5
o
oo
o
o
0
012345678910
10
20
30
40
5
Voltage
50
100
150
200
-30 125250 50 75 100
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 10 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambien t Tempe rature Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current
vs. Ambient Temperature Fig.10 Response Time vs. Load
Fig.11 Frequency Response
L
CEO
CE
R = 1k
L
V = 5V
Ic= 2mA
Ta= 25 C
CE
I = 10mA
V = 5V
CE
FF
Ic= 1mA
I = 100mA
V = 10V
CE CE
V = 2V
Ic= 2mA
Ta= 25 C tr tf
vs. Ambient Temperature
-11
10
-20
ts
td
1k 100
Relative current transfer ratio (%)
Response time ( s)
Collector dark current I (A)
Voltage gain Av (dB)
Collector-emitter saturation voltage
V (sat) (V)
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
A mbient temperature Ta ( C) Load resistance R (k )
Frequency f (kHz)
-25 0 25 50 75 100
0
50
100
150
-25
02507550 100
20
40
60
80
100
120
140
160
0-25 25 1007550 0.1 0.2 0.5 1 2 5 100.03
0.1
0.2
0.5
1
2
5
10
20
50
100
200
1 2 5 10 20 100 500 1000
-15
-10
-5
0
10-10
10-9
10-8
10-7
10-6
10-5
o
o
o
o
o
Resistance
Input ROutput
Input
R
DOutput
L
Vcc
td
tr tf
ts
90%
10%
Output
RDL
R
Vcc
Test Circuit for Response Time
Test Circuit for Frequency Response
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 11 of 12
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
4 PIN 8 PIN
16 PIN
Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) Page : 12 of 12
BNS-OD-C131/A4
