IRF7507PbF
PD - 95218
lGeneration V Technology
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lVery Small SOIC Package
lLow Profile (<1.1mm)
lAvailable in Tape & Reel
lFast Switching
HEXFET® Power MOSFET
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.135Ω0.27Ω
5/11/04
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Description
www.irf.com 1
Parameter Max. Units
N-Channel P-Channel
VDS Drain-Source Voltage 20 -20 V
ID @ TA = 25°C Continuous Drain Current, VGS 2.4 -1.7
ID @ TA = 70°C Continuous Drain Current, VGS 1.9 -1.4 A
IDM Pulsed Drain Current 19 -14
PD @TA = 25°C Maximum Power Dissipation1.25 W
PD @TA = 70°C Maximum Power Dissipation0.8 W
Linear Derating Factor 10 mW/°C
VGS Gate-to-Source Voltage ± 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µS 16 V
dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Absolute Maximum Ratings
lLead-Free
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Micro8
RθJA Maximum Junction-to-Ambient 100 °C/W
Units
Parameter Max.
IRF7507PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 — — VGS = 0V, ID = 250µA
P-Ch -20 — — VGS = 0V, ID = -250µA
N-Ch — 0.041 — Reference to 25°C, ID = 1mA
P-Ch — -0.012 — Reference to 25°C, ID = -1mA
— 0.085 0.14 VGS = 4.5V, ID = 1.7A
— 0.120 0.20 VGS = 2.7V, ID = 0.85A
— 0.17 0.27 VGS = -4.5V, ID =-1.2A
— 0.28 0.40 VGS = -2.7V, ID =-0.6A
N-Ch 0.7 — — VDS = VGS, ID = 250µA
P-Ch -0.7 — — VDS = VGS, ID = -250µA
N-Ch 2.6 — — VDS = 10V, ID = 0.85A
P-Ch 1.3 — — VDS = -10V, ID = -0.6A
N-Ch — — 1.0 VDS = 16 V, VGS = 0V
P-Ch — — -1.0 VDS = -16V, VGS = 0V
N-Ch — — 25 VDS = 16 V, VGS = 0V, TJ = 125°C
P-Ch — — -25 VDS = -16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 12V
N-Ch –– 5.3 8.0
P-Ch — 5.4 8.2
N-Ch –– 0.84 1.3
P-Ch — 0.96 1.4
N-Ch –– 2.2 3.3
P-Ch — 2.4 3.6
N-Ch — 5.7 —
P-Ch — 9.1 —
N-Ch — 24 —
P-Ch — 35 —
N-Ch — 15 —
P-Ch — 38 —
N-Ch — 16 —
P-Ch — 43 —
N-Ch — 260 —
P-Ch — 240 —
N-Ch — 130 — pF
P-Ch — 130 —
N-Ch — 61 —
P-Ch — 64 —
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
Notes:
N-Channel ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 1.25
P-Ch — — -1.25
N-Ch — — 19
P-Ch — — -14
N-Ch — — 1.2 TJ = 25°C, IS = 1.7A, VGS = 0V
P-Ch — — -1.2 TJ = 25°C, IS = -1.2A, VGS = 0V
N-Ch — 39 59
P-Ch — 52 78
N-Ch — 37 56
P-Ch — 63 95
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
ID = 1.7A, VDS = 16V, VGS = 4.5V
P-Channel
ID = -1.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.7A, RG = 6.0Ω,
RD = 5.7Ω
P-Channel
VDD = -10V, ID = -1.2A, RG = 6.0Ω,
RD = 8.3Ω
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
N-Ch
P-Ch
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7507PbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
N - Channel
0.01
0.1
1
10
100
0.1 1 10
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25°C
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
J
0.01
0.1
1
10
100
0.1 1 10
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20µs PULSE WIDTH
T = 150°C
J
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = 4.5V
GS
I = 1.7A
D
0.0
0.2
0.4
0.6
0.8
0246
A
I , Drain Current (A)
D
V = 2.5V
GS
V = 5.0V
GS
RDS(on), Drain-to-Source On Resistance
IRF7507PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N - Channel
0.05
0.07
0.09
0.11
0.13
2345678
A
R , Drain-to-Source On Resistance
DS(on)
(Ω
GS
V , Gate-to-Source Voltage (V)
I = 2.4A
D
0
100
200
300
400
500
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0246810
G
GS
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 9
I = 1.7A
V = 16V
D
DS
0.1
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF7507PbF
www.irf.com 5
Fig 11. Typical Output Characteristics
Fig 13. Typical Transfer Characteristics
Fig 12. Typical Output Characteristics
Fig 14. Typical Source-Drain Diode
Forward Voltage
Fig 15. Normalized On-Resistance
Vs. Temperature
Fig 16. Typical On-Resistance Vs. Drain
Current
P - Channel
0.01
0.1
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-1.5V
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
0.01
0.1
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 150°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.01
0.1
1
10
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.2
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
I = -1.2A
V = -4.5V
D
GS
0.0 0.5 1.0 1.5 2.0
0.0
0.2
0.4
0.6
0.8
1.0
R , Drain-to-Source On Resistance
-I , Drain Current (A)
D
DS (on)
VGS = -2.5V
VGS = -5.0V
IRF7507PbF
6www.irf.com
Fig 18. Maximum Safe Operating Area
Fig 17. Typical On-Resistance Vs. Gate
Voltage
P - Channel
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
N-P - Channel
0.1
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
0
100
200
300
400
500
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0246810
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -1.2A
V = -16V
FOR TEST CIRCUIT
SEE FIGURE 19
D
DS
2345678
0.100
0.150
0.200
0.250
0.300
R , Drain-to-Source On Resistance
-V , Gate-to-Source Voltage (V)
GS
DS (on)
ID = -1.7A
IRF7507PbF
www.irf.com 7
Micro8 Part Marking Information
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES MILLIMETERS
MIN MAX MIN MAX
A
0.10 (.004)
0.25 (.010) M A M
H
1 2 3 4
8 7 6 5
D
- B - 3
3
E
- A -
e
6X
e 1
- C -
B 8X
0.08 (.003) M C A S B S
A 1 L
8X
C
8X
θ
NOTES:
1 DIMENSIONING A ND TOLERANCING PER ANSI Y14.5M-1982 .
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
A .036 .044 0.91 1.11
A1 .004 .008 0.10 0.20
B .010 .014 0.25 0.36
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .116 .120 2.95 3.05
H .188 .198 4.78 5.03
L .016 .026 0.41 0.66
θ
0° 6° 0° 6°
DIM
LEAD ASSIGNMENTS
SINGLE DUAL
D D D D D1 D1 D2 D2
S S S G S1 G1 S2 G2
1 2 3 4 1 2 3 4
8 7 6 5 8 7 6 5
RECOMMENDED FOOTPRINT
1.04
( .041 )
8X
0.38
( .015 ) 8X
3.20
( .126 )
4.24
( .167 )
5.28
( .208 )
0.65
( .0256 )6X
LOT CODE (XX)
EXAMPLE: T HIS IS AN IRF 7501
PART NUMBE R
P = D E S IGNAT E S L E AD - F R E E
PRODUCT (OPTIONAL)
W = WE EK
Y = YEAR
DAT E CODE (YW) - S ee tabl e bel ow
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
YEAR Y
WOR K
WE E K W
92009
52005
2003
2002
2001
2004
3
2
1
4
2007
2006
2008
7
6
8
2010 0
03
02
01
04
C
B
A
D
26
24
25
Z
X
Y
B2002 B28
WW = (27-52) IF PRECEDED BY A LETTER
YEAR
2001
Y
A
WEEK
WOR K
27
W
A
K2010
F2006
2004
2003
2005
D
C
E
2008
2007
2009
H
G
J
X50
30
29
D
C
51
52
Y
Z
IRF7507PbF
8www.irf.com
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.