©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002
KSK596
Si N-channel Junction FET
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
IDSS Classification
Symbol Parameter Ratings Units
VGDO Gate-Drain Voltage -20 V
IGGate Current 10 mA
IDDrain Current 1 mA
PDPower Dissipation 100 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVGDO Gate-Drain Breakdown Volt age IG= -100uA -20 V
VGS(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA -0.6 -1.5 V
IDSS Drain Current VDS=5V, VGS=0 100 350 µA
lYFSl Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 1.2 ms
Ciss Input Capacitance VDS=5V, VGS=0, f=1MHz 3.5 pF
Crss Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF
Classification A B C
IDSS(µA) 100 ~ 170 150 ~ 240 210 ~ 350
KSK596
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
1.Source 2. Gate 3. Drain
TO-92S
1
©2002 Fairchild Semiconductor Corporation
KSK596
Rev. B2, November 2002
Typical Characteristics
Figure 1 . ID-VDS Figure 2. ID-VDS
Figur e 3 . ID-VGS Figure 4.
yFS
-IDSS
Figure 5. VGS(off)-IDSS Figure 6 . C ISS-VDS
012345678910
0
50
100
150
200
250
300
350
400
450
500
VGS = -0.3V
IDSS = 200µA
VGS = 0
VGS = -0.1V
VGS = -0.2V
VGS = -0.4V
ID[µA], DRAIN CURRENT
VDS[V], DRAIN-SOURCE VOLTAGE
012345678910
0
100
200
300
400
500
600
700
800
900
1000
VGS = -0.6V
VGS = -0.5V
ID[µA], DRAIN CURRENT
VDS[V], DRAIN-SOURCE VOLTAGE
IDSS = 500µA
VGS = -0.4V
VGS = -0.3V
VGS = -0.2V
VGS = -0.1V
VGS = 0
-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VDS = 5V
ID[mA], DRAIN CURRENT
VGS[V], GATE-SOURCE VOLTAGE
0.1 1
0.1
1
10
VDS = 5V
VGS = 0
f=1kHz
lYFSl [ms], FOR W AR D TR AN SF ER ADM ITTA NC E
IDSS[mA], DRAIN CURRENT
0.1 1
0.1
1
10
-
-
-VDS = 5V
ID = 1µA
VGS(off)[V], GATE -S OURCE C UT-OF F VO LTA GE
IDSS[mA], DRAIN CURRENT 110
1
10
100
Ciss[p F ], IN PU T C APA CIT A N C E
VDS[V], DRAIN-SOURCE VOLTAGE
©2002 Fairchild Semiconductor Corporation
KSK596
Rev. B2, November 2002
Typical Characteristics (Continued)
Figur e 7 . C RSS-VDS Figure 8. PD-TA
110
0.1
1
10
VGS = 0
f = 1 MHz
Crss[pF], OUTPUT CAPACITANCE
VDS[V], DRAIN-SOURCE VOLTAGE
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
PC[m W], PO W E R D ISSIP A T I ON
Ta[oC], AMBIENT TEMPERATURE
4.00 ±0.20
3.72 ±0.20
2.86 ±0.20
2.31 ±0.20
3.70 ±0.20
0.77 ±0.10 14.47 ±0.30
(1.10)
0.49 ±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35 +0.10
–0.05
TO-92S
Package Dimensions
KSK596
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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