ON Semiconductor N-Channel -- Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage VDG -35 Vdc Gate-Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Lead Temperature TL 300 C TJ, Tstg -65 to +150 C Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 5 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 35 -- Vdc IGSS -- -1.0 nAdc -3.0 -1.0 -0.5 -10 -5.0 -3.0 -- 1.0 20 5.0 2.0 -- -- -- -- -- -- 30 50 100 OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc) Gate Reverse Current (VGS = -15 Vdc) Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 Adc) VGS(off) J111 J112 J113 Drain-Cutoff Current (VDS = 5.0 Vdc, VGS = -10 Vdc) ID(off) Vdc nAdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) (VDS = 15 Vdc) Static Drain-Source On Resistance (VDS = 0.1 Vdc) IDSS J111 J112 J113 mAdc rDS(on) J111 J112 J113 Drain Gate and Source Gate On-Capacitance (VDS = VGS = 0, f = 1.0 MHz) Cdg(on) + Csg(on) -- 28 pF Drain Gate Off-Capacitance (VGS = -10 Vdc, f = 1.0 MHz) Cdg(off) -- 5.0 pF Source Gate Off-Capacitance (VGS = -10 Vdc, f = 1.0 MHz) Csg(off) -- 5.0 pF 1. Pulse Width = 300 s, Duty Cycle = 3.0%. Semiconductor Components Industries, LLC, 2001 June, 2001 - Rev. 1 1 Publication Order Number: J111/D J111 J112 J113 TYPICAL SWITCHING CHARACTERISTICS 1000 TJ = 25C 500 RK = RD 200 J111 J112 J113 100 500 VGS(off) = 12 V = 7.0 V = 5.0 V 50 20 10 RK = 0 5.0 RK = RD 200 t r , RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) 1000 100 20 10 RK = 0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) Figure 1. Turn-On Delay Time 1000 1000 TJ = 25C 500 J111 J112 J113 200 100 500 VGS(off) = 12 V = 7.0 V = 5.0 V 20 10 RK = 0 5.0 RK = RD 200 RK = RD 50 20 30 50 Figure 2. Rise Time t f , FALL TIME (ns) t d(off) , TURN-OFF DELAY TIME (ns) TJ = 25C VGS(off) = 12 V = 7.0 V = 5.0 V 50 5.0 2.0 J111 J112 J113 100 TJ = 25C J111 J112 J113 VGS(off) = 12 V = 7.0 V = 5.0 V 50 20 10 RK = 0 5.0 2.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.5 0.7 1.0 50 Figure 3. Turn-Off Delay Time RD RK OUTPUT 50 VGEN INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0% RT RGG 30 50 NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (-VGG). The Drain-Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or Gate-Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn-on interval, Gate-Source Capacitance (Cgs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and Drain-Source Resistance (rds). During the turn-off, this charge flow is reversed. Predicting turn-on time is somewhat difficult as the channel resistance rds is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turn-on time is non-linear. During turn-off, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD, which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. SET VDS(off) = 10 V RGEN 50 20 Figure 4. Fall Time +VDD INPUT 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 50 VGG RGG RK RD(RT 50) RD RD RT 50 Figure 5. Switching Time Test Circuit http://onsemi.com 2 20 15 J112 10 J111 10 C, CAPACITANCE (pF) y fs, FORWARD TRANSFER ADMITTANCE (mmhos J111 J112 J113 J113 7.0 5.0 Tchannel = 25C VDS = 15 V 3.0 Cgs 7.0 5.0 Cgd 3.0 2.0 Tchannel = 25C (Cds IS NEGLIGIBLE) 1.5 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 1.0 0.03 0.05 0.1 50 Figure 6. Typical Forward Transfer Admittance IDSS = 10 160 mA 25 mA 50mA 75mA 100mA 80 0 Tchannel = 25C 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 7.0 8.0 ID = 1.0 mA VGS = 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -70 Figure 8. Effect of Gate-Source Voltage On Drain-Source Resistance 90 10 Tchannel = 25C 9.0 80 70 8.0 7.0 rDS(on) @ VGS = 0 60 50 6.0 VGS(off) -40 -10 20 50 80 110 Tchannel, CHANNEL TEMPERATURE (C) 140 170 Figure 9. Effect of Temperature On Drain-Source On-State Resistance 5.0 40 4.0 30 3.0 20 2.0 10 1.0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZERO-GATE-VOLTAGE DRAIN CURRENT (mA) VGS, GATE-SOURCE VOLTAGE (VOLTS) rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 100 30 2.0 125mA 120 40 10 Figure 7. Typical Capacitance rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 200 0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) NOTE 2 The Zero-Gate-Voltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate-Source Off Voltage (VGS(off) and Drain- Source On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an J112 The electrical characteristics table indicates that an J112 has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts. Figure 10. Effect of IDSS On Drain-Source Resistance and Gate-Source Voltage http://onsemi.com 3 J111 J112 J113 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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