© 2003 IXYS All rights reserved DS98986D(05/03)
High Voltage IGBT IXGH 20N120B
IXGT 20N120B
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD (IXGH)
Features
zHigh Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
zInternational standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
zLow switching losses, low V(sat)
zMOS Gate turn-on
- drive simplicity
Advantages
zHigh power density
zSuitable for surface mounting
zEasy to mount with 1 screw,
(isolated mounting screw hole)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 1200 V
VGE(th) IC= 250 µA, VCE = VGE 2.5 5 V
ICES VCE = VCES TJ = 25°C50µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= 20A, VGE = 15 V 2.9 3.4 V
TJ = 125°C 2.8 3.8 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C40A
IC110 TC= 110°C20A
ICM TC= 25°C, 1 ms 80 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 80 A
(RBSOA) Clamped inductive load @ 0.8 VCES
PCTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260 °C
MdMounting torque (M3) (TO-247) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
TO-268
(IXGT)
G
EC (TAB)
VCES = 1200 V
IC25 =40A
VCE(sat) = 3.4 V
tfi(typ) = 160 ns
Preliminary Data Sheet
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 20A; VCE = 10 V, 12 18 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 1700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 95 pF
Cres 35 pF
Qg72 nC
Qge IC = 20A, VGE = 15 V, VCE = 0.5 VCES 12 nC
Qgc 27 nC
td(on) 25 ns
tri 15 ns
td(off) 150 280 ns
tfi 160 320 ns
Eoff 2.1 3.5 mJ
td(on) 25 ns
tri 18 ns
Eon 0.9 mJ
td(off) 270 ns
tfi 360 ns
Eoff 3.5 mJ
RthJC 0.65 K/W
RthCK (TO-247) 0.25 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 AD Outline
Inductive load, TJ = 125°°
°°
°C
IC = 20A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
Inductive load, TJ = 25°°
°°
°C
IC = 20 A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
Min Recommended Footprint
IXGH 20N120B
IXGT 20N120B
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 20N120B
IXGT 20N120B
© 2003 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
20
40
60
80
10 0
12 0
14 0
16 0
024681012141618
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
9V
1 1V
7V
5V
13 V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
5
10
15
20
25
30
35
40
0.511.522.533.544.55
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
1 3V
1 1 V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
5
10
15
20
25
30
35
40
1 1.5 2 2.5 3 3.5 4 4.5 5
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
1 3V
1 1 V
5V
7V
9V
Fig. 5. Input Admittance
0
10
20
30
40
50
60
70
80
345678910
V
GE
- Volts
I
C
- Amperes
T
J
= -40ºC
25ºC
1 25ºC
Fig. 6. Transconductance
0
3
6
9
12
15
18
21
24
27
0 1020304050607080
I
C
- Amperes
G
f s
- Siemens
T
J
= -40ºC
25ºC
1 25ºC
Fig. 4. Temperature Dependence of V
CE(sat)
0.7
0.8
0.9
1
1. 1
1. 2
1. 3
1. 4
-50 -25 0 25 50 75 100 125 150
T
J
- Degr ees Centigr ade
V
CE (s at)
- Normalize
d
I
C
= 40A
I
C
= 20A
I
C
= 1 0A
V
G E
= 1 5V
IXGH 20N120B
IXGT 20N120B
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 11. Capacitance
10
10 0
1000
10000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - p
F
C
i es
C
oes
C
res
f = 1 MHz
Fig. 10. Gate Charge
0
3
6
9
12
15
0 102030 4050607080
Q
G
- nanoCoulombs
V
G E
- Volts
V
C E
= 600V
I
C
= 20A
I
G
= 1 0mA
Fig. 7. Dependence of E
off
on R
G
0
2
4
6
8
10
12
14
0 102030405060
R
G
- Ohms
E
off
- milliJoules
I
C
= 1 0A
I
C
= 20A
I
C
= 40A
T
J
= 1 25ºC
V
G E
= 1 5V
V
C E
= 960V
Fig. 8. Dependence of E
off
on I
C
2
4
6
8
10
12
14
10 15 20 25 30 35 40
I
C
- Amperes
E
off
- milliJoules
R
G
= 5 Ohms
R
G
= 56 Ohms
T
J
= 1 25ºC
V
G E
= 1 5V
V
C E
= 960V
Fig. 9. Dependence of E
off
on T emperature
0
2
4
6
8
10
12
14
16
0 255075100125150
T
J
- Degrees Centigrade
E
off
- milliJoules
I
C
= 40A
I
C
= 20A
I
C
= 1 0A
V
G E
= 1 5V
V
C E
= 960V
Solid lines - R
G
= 56 Ohms
Dashed lines - R
G
= 5 Ohms
Fig. 12. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
100 300 500 700 900 1100 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10 Ohms
dV/dT < 10V/ns
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 20N120B
IXGT 20N120B
Fig. 13. Maximum Transient Thermal Resistance
0.1
1
1 10 100 1000
Puls e W idth - millis ec ond s
R (th) J C - (ºC/W)
© 2003 IXYS All rights reserved
