Rev 0.6 / Nov. 2005 1
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Document Title
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
Revision History
Revision
No. History Draft Date Remark
0.0 Initial Draft. Sep. 2004 Preliminary
0.1
1) Correct Summary description & page.7
- The Cache feature is deleted in summary description.
- Note.3 is deleted. (page.7)
2) Correct table.5 & Table.12
3) Correct TSOp1, WSOP1 Pin description
- 38th pin has been changed Lockpre
4) Add Bad Block Management & System Interf a ce using CE don’t care
5) Change TSOP1, WSOP1, FBGA package dimension & figures.
- Change TSOP1, WSOP1, FBGA package mechanical data
- Change TSOP1, WSOP1 package figures
Nov. 29. 2004 Preliminary
0.2
1) LOCKPRE is changed to PRE.
- Texts, Tables and figures are changed.
2) Change Command Set
- READ A and B are changed to READ 1.
- READ C is changed to READ 2.
3) Change AC, DC characterics
- tRB, tCRY, tCEH and tOH are added.
4) Correct Program time (max)
- before : 700us
- after : 500us
5) Edit figures
- Address names are changed.
6) Change AC characterics
Mar. 03. 2005 Preliminary
tRP tREA
Before 30 35
After 25 30
Rev 0.6 / Nov. 2005 2
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Revision History
- Continued -
Revision
No. History Draft Date Remark
0.3
1) Change AC Characteristics (1.8V device)
2) Change AC Parameter
3) Add Read ID Ta ble
4) Edit Automatic Read at Power On & Power On/Off Timing
- Texts & Figure are Changed.
5) Insert the Marking Information.
6) Change 128Mb Package Type.
- FBGA package is deleted.
- WSOP package is changed to USOP package.
- Figure & dimension are changed.
Jun. 13. 2005 Preliminary
0.4
1) Delete the 1.8V device’s features.
2) Change AC Conditions table
3) Add tWW parameter ( tWW = 100ns, min)
- Texts & Figures are added.
- tWW is added in AC timing characteristics table.
4) Edit Copy Back Program operation step
5) Edit System Interface Using CE don’t care Figures.
6) Correct Address Cycle Map.
Jul. 26. 2005
0.5
1) Correct PKG dimension (TSOP, USOP PKG)
Sep. 02. 2005
0.6 1) Correct USOP figure. Nov. 07. 2005
tRC tRP tREH tWC tWP tWH tREA
Before 50 25 15 50 25 15 30
After 60 40 20 60 40 20 40
tCRY(3.3V) tCRY(1.8V) tOH
Before 50+tr(R/B#) 50+tr(R/B#) 15
After 60+tr(R/B#) 60+tr(R/B#) 10
CP
Before 0.050
After 0.100
Rev 0.6 / Nov. 2005 3
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27USXX281A
Memory Cell Array
= (512+16) Bytes x 32 Pages x 1,024 Blocks
= (256+8) Words x 32 pages x 1,024 Blocks
PAGE SIZE
- x8 device : (512 + 16 spare) Bytes
: HY27US08281A
- x16 device: (256 + 8 spare) Words
: HY27US16281A
BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
- Random access: 10us (max.)
- Sequential access: 3.3V device: 50ns (min.)
- Page program time: 200us (typ.)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
FAST BLOCK ERASE
- Block erase time: 2ms (Typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE
- Manufacturer Code
- Device Code
CHIP ENABLE DON'T CARE OPTION
- Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
PACKAGE
- HY27US(08/16)281A-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27US(08/16)281A-T (Lead)
- HY27US(08/16)281A-TP (Lead Free)
- HY27US(08/16)281A-S(P)
: 48-Pin USOP1 (12 x 17 x 0.65 mm)
- HY27US(08/16)281A-S (Lead)
- HY27US(08/16)281A-SP (Lead Free)
Rev 0.6 / Nov. 2005 4
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
1. SUMMARY DESCRIPTION
The HYNIX HY27US(08/16)281A series is a 16Mx8bit with spare 4G bit capacity. The device is offered in 1.8V Vcc
Power Supply and in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old
data is erased.
The device contains 1024 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected
Flash cells.
A program operation allows to write the 512-byte page in typical 200us and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) block.
Data in the page mode can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command input. This interf ace allows a reduced pin count an d easy migr ation towards dif-
ferent densities, without any rearrangement of footprint.
Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin.
The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data.
The modifying can be locked using the WP# input pin.
The output pin RB# (open drain buffer) signals the status of the device during each operation. In a system with mul-
tiple memories the RB# pins can be connected all together to provide a global status signal.
Even the write-intensive syste ms can take adv antage of the HY27US(08/16)281A extended relia bility of 100K progr am/
erase cycles by providing ECC (Error Correcti ng Code) with real time mapping-out algorithm.
Optionally the chip could be offered with the CE# don’t care function. This option allows the direct download of the
code from the NAND Flash memory device by a microcontroller, since the CE# transitions do not stop the read opera-
tion.
The copy back function allows the optimization of defective blocks management: whe n a page progr am operat ion fails
the data can be directly programmed in another page inside the same arr ay section without the time consuming serial
data insertion phase.
This device includes also extra f eatures like O TP/Unique ID area, Block Lock mechanism, Automatic Read at P ower Up,
Read ID2 extension.
The Hynix HY27US(08/16)281A series is available in 48 - TSOP1 12 x 20 mm, 48 - USOP1 12 x 17 mm.
1.1 Product List
PART NUMBER ORIZATION VCC RANGE PACKAGE
HY27US08281A x8 2.7V - 3.6 Volt 48TSOP1/48USOP1
HY27US16281A x16
Rev 0.6 / Nov. 2005 5
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
9&&
966
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Figure1: Logic Diagram
IO15 - IO8 Data Input / Outputs (x16 Only)
IO7 - IO0 Data Input / Outputs
CLE Command latch enable
ALE Address latch enable
CE# Chip Enable
RE# Read Enable
WE# Write Enable
WP# Write Protect
RB# Ready / Busy
Vcc Power Supply
Vss Ground
NC No Connection
PRE Power-On Read Enable, Lock Unlock
Table 1: Signal Names
Rev 0.6 / Nov. 2005 6
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
1&
1&
1&
1&
1&
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9FF
1&
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,2
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,2
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Figure 2. 48TSOP1 Contactions, x8 and x16 Device
1&
1&
1&
1&
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1&
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1&
1&
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,2
,2
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,2
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9FF
1&
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,2
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9VV
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1&
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1&
1&
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1&
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1&
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8623
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Figure 3. 48USOP1 Contactions, x8 and x16 Device
Rev 0.6 / Nov. 2005 7
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
1.2 PIN DESCRIPTION
Pin Name Description
IO0-IO7
IO8-IO15(1)
DATA INPUTS/OUTPUTS
The IO pins allow to input command, address and data and to output data during read / program
operations. The inputs are latched on the rising edge of W rite Enab le (WE#). The I/O buffer float to
High-Z when the device is deselected or the outputs are disabled.
CLE COMMAND LATCH ENABLE
This input activates the latching of the IO inputs inside the Address Register on the Rising edge of
Write Enable (WE#).
ALE ADDRESS LATCH ENABLE
This input activates the latching of the IO inputs inside the Command Register on the Rising edge of
Write Enable (WE#).
CE# CHIP ENABLE
This input controls the selection of the device. When the device is busy CE# low does not deselect
the memory.
WE# WRITE ENABLE
This input acts as clock to latch Command, Address and Data. The IO inputs are latched on the rise
edge of WE#.
RE#
READ ENABLE
The RE# input is the serial data-out control, and when active drives the data onto the I/O bus. Data
is valid tREA after the f alling edge of RE# which also increments the internal column address counter
by one.
WP# WRITE PROTECT
The WP# pin, when Low, provides an Hardware protection against undesired modify (program /
erase) operations.
RB# READY BUSY
The Ready/Busy output is an Open Drain pin that signals the state of the memory.
VCC SUPPLY VOLTAGE
The VCC supplies the power for all the operations (Read, Write, Erase).
VSS GROUND
NC NO CONNECTION
PRE
To Enable and disable the Lock mechanism and Power On Auto Read. When PRE is a logic high,
Block Lock mode and Power-On Auto-Read mode are enabled, and when PRE is a logic low, Block
Lock mode and Power -On Auto-R ead mode are disa bled. P o wer-On Auto-R ead mode is a v ailable only
on 3.3V device.
Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss or leave it N.C.
Table 2: Pin Description
NOTE:
1. For x16 version only
2. A 0.1uF capacitor should be connected between the Vcc Supply Voltage pin and the Vss Ground pin to decouple
the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required
during program and erase operations.
Rev 0.6 / Nov. 2005 8
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7
1st Cycle A0 A1 A2 A3 A4 A5 A6 A7
2nd Cycle A9 A10 A11 A12 A13 A14 A15 A16
3rd Cycle A17 A18 A19 A20 A21 A22 A23 L(1)
Table 3: Address Cycle Map(x8)
NOTE:
1. L must be set to Low.
2. A8 is set to LOW or High by the 00h or 01h Command.
IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7 IO8-IO15
1st Cycle A0 A1 A2 A3 A4 A5 A6 A7 L(1)
2nd Cycle A9 A10 A11 A12 A13 A14 A15 A16 L(1)
3rd Cycle A17 A18 A19 A20 A21 A22 A23 L(1) L(1)
Table 4: Address Cycle Map(x16)
NOTE:
1. L must be set to Low.
FUNCTION 1st CYCLE 2nd CYCLE 3rd CYCLE 4th CYCLE Acceptable command
during busy
READ 1 00h/01h - -
READ 2 50h - -
READ ID 90h - -
RESET FFh - - Yes
PAGE PROGRAM 80h 10h -
COPY BACK PGM 00h 8Ah (10h)
BLOCK ERASE 60h D0h -
READ STATUS REGISTER 70h - - Yes
EXTRA AREA EXIT 06h
LOCK BLOCK 2Ah
LOCK TIGHT 2Ch
UNLOCK (start area) 23h
UNLOCK (end area) 24h
READ LOCK STATUS 7Ah
Table 5: Command Set
Rev 0.6 / Nov. 2005 9
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
CLE ALE CE# WE# RE# WP# MODE
H L L Rising H X Read Mode Command Input
L H L Rising H X Address Input(3 cycles)
H L L Rising H H Wri te Mo de Command Input
L H L Rising H H Address Input(3 cycles)
LLLRisingHHData Input
LL
L(1) H Falling X Sequential Read and Data Output
L L L H H X During Read (Busy)
XXXXXHDuring Program (Busy)
XXXXXHDuring Erase (Busy)
XXXXXLWrite Protect
XXHXX0V/VccStand By
Table 6: Mode Selection
NOTE:
1. With the CE# don’t care option CE# high during latency time does not stop the read operation
Rev 0.6 / Nov. 2005 10
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
2. BUS OPERATION
There are six standard bus operations that control the device. These are Command Input, Address Input, Data Input,
Data Output, Write Protect, and Standby.
Typically glitch es less than 5 ns o n Chip Enable, W rite Enab le and R ead Ena ble are ig nore d by the memo ry and do not
affect bus o perations.
2.1 Command Input.
Command Input bus operation is used to give a command to the memory device. Command are accepted with Chip
Enable low, Command Latch Enable High, Address Latch Enable low and Read Enable High and latched on the rising
edge of Write Enable. Moreover for commands that starts a modifying operation (write/erase) the Write Protect pin
must be high. See figure 5 and table 12 for details of the timings requirements. Command codes ar e always applied on
IO7:0, disregarding the bus configuration (X8/X16).
2.2 Address Input.
Address Input bus operation allows the insertion of the memory address. Three cycles are required to input the
addresses for the 128Mbit devices. Addresses are accepted with Chip Enable low, Address Latch Enable High, Com-
mand Latch Enable low and R ead Enable high and latche d on the rising edge of Write Enable. More over f or commands
that starts a modify operation (write/er ase) the W rite Protect pin must be high. See figure 6 and table 10 f or details of
the timings requirements. Addresses are always applied on IO7:0, disregarding the bus configuration (X8/X16).
In addition, addresses over the addr essable space (A23 f or 128Mbit) are disr egarded even if th e user sets them during
command insertion.
2.3 Data Input.
Data Input bus operation allows to feed to the device the data to be programmed. The data insertion is serially and
timed by the Write Enable cycles. Data are accepted only with Chip Enable low, Address Latch Enable low, Command
Latch Enable low, Read Enable High, and Write Protect High and latched on the rising edge of Write Enab le. See figure
7 and table 12 for details of the timings requirements.
2.4 Data Output.
Data Output bus operation allows to read data from the memory array and to check the status register content, the
lock status and the ID data. Data can be serially shifted out toggling the Read Enable pin with Chip Enable low, Write
Enable High, Address Latch Enable low, and Command Latch Enable low. See figures 8 to 12 and table 12 for details
of the timings requirements.
2.5 Write Protect.
Hardware Write Protection is activated when the Write Protect pin is low. In this condition modify operation do not
start and the content of the memory is not altered. Write Protect pin is not latched by Write Enable to ensure the pro-
tection even during the power up.
2.6 Standby.
In Standby mode the device is deselected, outputs are disabled and Power Consumption is reduced.
Rev 0.6 / Nov. 2005 11
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
3. DEVICE OPERATION
3.1 Page Read.
Upon initial device power up, the device def aults to Read1 mode. This operation is also initiated by writing 00h to the
command register along with followed by the three address input cycles. Once the command is latched, it does not
need to be written for the following page read operation.
Three types of operations are available: random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes (x8 device) or 264 word (x16
device) of data within the selected page are transferred to the data registers in less than access random read time tR
(10us). The system controller can detect the completion of this data transfe r tR (10us) by analyzing the output of RB#
pin. Once the data in a page is loaded into the registers, they may be r ead out in 50ns cycle time by sequentially puls-
ing RE#. High to low transitions of the RE# clock output the data stating from the selected column address up to the
last column address.
After the data of last column address is clocked out, the next page is automatically selected for sequential row read.
Waiting tR again allows reading the selected page. The sequential row read operation is terminated by bringing CE#
high.
The way the Read1 and Read2 commands work is like a pointer se t to either the main ar ea or the spar e area. Writing
the R ead2 comm and use r may selectively access the spare area of b ytes 512 to 527. Addresses A0 to A3 se t the start-
ing address of the spar e area while addr esses A4 to A7 are ignore d. Unless the oper ation is aborted, the p age addr ess
is automatically incremented for sequential row
Read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Read1 command
(00h/01h) is needed to move the pointer back to the main area. Figure_10 to 13 show typical sequence and timings
for each read o peration.
Devices with automatic read of page0 at power up can be provided on request.
3.2 Page Program.
The device is progr am med basically on a page ba sis, but it does allow multiple partial page progr amming of a b yte or
consecutive bytes up to 528 (x8 device), in a single page program cycle. The number of consecutive partial page pro-
gramming operations within the same page without an intervening erase operation must not exceed 1 for main array
and 2 for spar e arr ay. The addre ssing may be d one in any r andom order in a block. A page progr am cycle cons ists of a
serial data loading period in which up to 528 bytes (x8 device) or 264 word (x16 device) of data may be loaded into
the page register, followed by a non-volatile programming period where the loaded data is programmed into the
appropriate cell. Serial data loading can be started from 2nd half arr ay by mo ving pointer. About the pointer oper ation,
please refer to Figure_27.
The data-loading sequence begins by inputting the Serial Data Input command (80h), followed by the three address
input cycles and then serial data loading. The P age Prog r am confirm command (10h) starts the progr amming process.
Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal
Program Er ase Controller automatically execute s the algorithms and timings necessary f or program and verif y, thereby
freeing the system controller for other tasks. Once the program process starts, the Read Status Register command
may be entered, with RE# and CE# low , to read the status re gister. The system controlle r can detect the completion of
a program cycle by monitoring the RB# output, or the Status bit (I/O 6) of the Status Register. Only the Read Status
command and Reset command are valid while programming is in progress. When the Page Program is complete, the
Write Status Bit (I/O 0) may be checked Figure_14.
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command reg-
ister remains in Read Status command mode until another valid command is written to the command register.
Rev 0.6 / Nov. 2005 12
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
3.3 Block Erase.
The Erase operation is done on a block (16K Byte) basis. It consists of an Erase Setup command (60h), a Block
address loading and an Erase Confirm Command (D0h). The Erase Confirm command (D0h) following the block
address loading initiates the internal erasing process. This two-step sequence of setup followed by execution com-
mand ens ures that me mory contents are not accidentally erased due to external noise conditions.
The block address loading is accomplished in two to three cycles depending on the device density. Only block
addresses (A14 to A23) are needed while A9 to A13 is ignored.
At the rising edge of WE# after the erase confirm command input, the internal Progr am Erase Contro ller handles erase
and erase-verify. When the erase operation is completed, the Write Status Bit (I/O 0) may be checked. Figure_16
details the sequence.
3.4 Copy-Back Program.
The copy-back program is provided to quickly and efficiently rewrite data stored in one page within the plane to
another page within the same plane without using an external memory. Since the time-consuming sequential-reading
and its reloading cycles are removed, the system performance is improved. The benefit is especially obvious when a
portion of a block is updated and the rest of the block also need to be copied to the newly assigned free block. The
operation for performing a copy-back program is a sequential execution of page-read without burst-reading cycle and
copying-progr am with the address of destination page. A normal r ead operation with "00h" comman d and the address
of the source page moves the whole 528byte data into the internal buffer. As soon as the device returns to Ready
state, P age-Copy Data-input command (8Ah) with the address cy cles of destination page followed may be written. The
Program Confirm command (10h) is not needed to actually begin the programming operation. For backward-compati-
bility, issuing Program Confirm command during copy-back does not affect correct device operation.
Copy-Back Pr ogram oper ation is allowed only within the same memory plane. Once the Copy -Back Program is finished,
any additional partial page programming into the copied pages is prohibited before erase. Plane address must be the
same between source and target page
"When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But, if
Copy-Back operations are accumu lated over time, bit e rror due to charge loss is not checked by external
error detection/correction scheme. For this reason, two bit error correction is recommended for the u se
of Copy-Back operation."
Figure 15 shows the command sequence for the copy-back operation.
The Copy Back Program operation requires three steps:
- 1. The source page must be read using the Read A command (one bus write cycle to setup the command and then 3
bus cycles to input the cource page address.) This operation copies all 264 Words/ 528 Bytes from the page into
the page Buffer.
- 2. When the device reutrns to the ready state (Ready/Busy High), the second bus write cycle of the command is
given with the 3cycles to input the target page address. A23 must be the same for the Source and Target
Pages.
- 3. Then the confirm command is issued to start the P/E/R Controller.
Rev 0.6 / Nov. 2005 13
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
3.5 Read Status Register.
The device contains a Status Register which ma y be read to find out whether rea d, progra m or erase oper ation is com-
pleted, and whether the progr am or er as e oper a tion is c omplet ed successf u lly. After wr iting 70h c ommand t o the com-
mand register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE# or
RE#, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple
memory connections even when RB# pins are common-wired. RE# or CE# does not need to be toggled for updated
status. Refer to table 13 for specific Status Register definitions. The command register remains in Status Read mode
until further commands are issued to it. Therefore, if the status register is read during a random read cycle, a read
command (00h or 50h) should be given before sequential page read cycle.
3.6 Read ID.
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an
address input of 00h. Two read cycles sequentially output the manufacturer code (ADh), the device code. The com-
mand register remains in Read ID mode until further commands are issued to it. Figur e 17 shows the oper ation
sequence, while tables 17 explain the byte meaning.
3.7 Reset.
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state
during random read, pr ogr am or er ase mode, the res et operation will abort these operations. The contents of memory
cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is
cleared to wait for the next command, and the Status Register is cleared to value E0h when WP# is high. Refer to
table 12 for device status after reset oper ation. I f the device is already in r eset state a new r eset command will not be
accepted by the command register. The RB# pin transitions to low for tRST after the Res et command is written. R ef er
to figure 23.
Rev 0.6 / Nov. 2005 14
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
4. OTHER FEATURES
4.1 Data Protection & Power On/Off Sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal
voltage detector disables all functions whenever Vcc is below about 2.0V (3.3V device). WP# pin provides hardware
protection and is recommended to be kept at VIL during power -up and power-down. A recovery time of minimum 10us
is required before internal circuit gets ready for any command sequences as shown in Figure 24. The two-step com-
mand sequence for program/erase provides additional software protection.
4.2 Ready/Busy.
The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase,
copy-back, cache program and random read completion. The RB# pin is normally high and goes to low when the
device is busy (after a reset, read, program, erase operation). It returns to high when the internal controller has fin-
ished the operation. The pin is an open-drain driver thereby allowing two or more RB# outputs to be Or-tied. Because
pull-up resistor value is related to tr(R B#) and current drain during busy (Ibusy), an appropriate value can be obtained
with the following reference chart (Fig 25). Its value can be determined by the following guidance.
4.3 Lock Block Feature
In high state of PRE pin, Block lock mode and Power on Auto read are enabled, otherwise it is regarded
as NAND Flash without PRE pin.
Block Lock mode is enabled while PRE pin state is high, which is to offer protection features for NAND Flash data. The
Block Lock mode is divided into Unlock, Lock, Lock-tight operation. Consecutive blocks protects data allows those
blocks to be locked or lock-tighten with no latency. This block lock scheme offers two levels of protection. The first
allows so ftware control (command in put method) of block locking that is useful for frequently changed data blocks,
while the second requires hardware control (WP# low pulse input method) before locking can be changed that is use-
ful for protecting infrequently changed code blocks. The followings summarized the locking functionality.
- All blocks are in a locked state on power-up. Unlock sequence can unlock the locked blocks.
- The Lock-tight command locks blocks and prevents from being unlocked. Lock-tight state can be returned to lock
state only by Hardware control(WP low pulse input).
1. Block lock operation
1) Lock
- Command Sequence: Lock block Command (2Ah). See Fig. 18.
- All blocks default to locked by power-up and Hardware control (W P# low pulse input)
- Partial block lock is not available; Lock block operation is based on all block unit
- Unlocked blocks can be locked by using the Lock block command, and a lock block’s status can be changed to
unlock or lock-tight using the appropriate commands
- On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10us(tLBSY)
Rev 0.6 / Nov. 2005 15
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
2) Unlock
- Command Sequence: Unlock block Command (23h) + Start block address + Command (24h) + End block address.
See Fig. 19.
- Unlocked blocks can be programmed or erased.
- An unlocked block’s status can be changed to the locked or lock-tighten state using the appropriate sequence of
commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB (Least Significant Bit) than End block address.
- One block is selected for unlocking block when Start block address is same as End block address.
3) Lock-tight
- Command Sequence: Lock-tight block Command (2Ch). See Fig. 20.
- Lock -tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block
that is lock-tighten can’t have its state changed by soft ware control, only by hardware control (WP# low pulse
input); Unlocking multi area is not available
- Only locked blocks can be lock-tighten by lock-tight command.
- On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10us(tLBSY)
4) Lock Block Boundaries after Unlock Command issuing
- If Start Block address = 0000h and End Block Address = FFFFh , the device is all unlocked
- If Start Block address = End Block Address = FFFFh , the device is all locked except for the last Block
- If Start Block address = End Block Address = 0000h , the device is all locked except for the first Block
2. Block lock Status Read
Block Lock Status can be read on a block basis to find out whether designated block is av a ilable to be pr ogrammed or
erased. After writing 7Ah command to the command register and block address to be checked, a read cycle outputs
the content of the Block Lock Status Re gister to the I/O pins on the f alling edge of CE# or RE#, whichever occurs last.
RE# or CE# does not need to be toggled for updated status. Block Lock Status Read is prohibited while the device is
busy state.
Refer to table 16 for specific Status Register definitions. The command register remains in Block Lock Status Read
mode until further commands are issued to it.
In high state of PRE pin, write protection status can be checked by Block Lock Status Read (7Ah) while
in low state by Status Read (70h).
4.4 Power-On Auto-Read
The device is designed to off er a utomatic reading of the first page without command and address inp ut sequence dur-
ing power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activa-
tion of auto- page read function. Auto-page read function is enabled only when PRE pin is logic high state. Serial
access may be done after power-on without latency. Power-On Auto Read mode is available only on 3.3V device.
Rev 0.6 / Nov. 2005 16
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Parameter Symbol Min Typ Max Unit
Valid Block Number NVB 1004 1024 Blocks
Table 6: Valid Blocks Number
Symbol Parameter Value Unit
3.3V
TA
Ambient Operating Temperature (Commercial Temperature Range) 0 to 70 ℃
Ambient Operating Temperature (Extended Temperature Range) -25 to 85 ℃
Ambient Operating Temperature (Industrial Temperature Range) -40 to 85 ℃
TBIAS Temperature Under Bias -50 to 125 ℃
TSTG Storage Temperature -65 to 150 ℃
VIO(2) Input or Output Voltage -0.6 to 4.6 V
Vcc Supply Voltage -0.6 to 4.6 V
Table 7: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at the se or an y other conditions abov e those indicat ed in t he Ope rat ing se ctions o f this specifi cation is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Rev 0.6 / Nov. 2005 17
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
$''5(66
5(*,67(5
&2817(5
352*5$0
(5$6(
&21752//(5
+9*(1(5$7,21
&200$1'
,17(5)$&(
/2*,&
&200$1'
5(*,67(5
'$7$
5(*,67(5
,2
5(
%8))(56
<'(&2'(5
3$*(%8))(5
;
'
(
&
2
'
(
5
0ELW0ELW
1$1')ODVK
0(025<$55$<
:3
&(
:(
&/(
$/(
35(
$a$
Figure 4: Block Diagram
Rev 0.6 / Nov. 2005 18
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Parameter Symbol Test Conditions 3.3Volt Unit
Min Typ Max
Operating
Current
Sequential
Read ICC1 tRC=50ns
CE#=VIL,
IOUT=0mA -1020mA
Program ICC2 - - 10 20 mA
Erase ICC3 - - 10 20 mA
Stand-by Current (TTL) ICC4 CE#=VIH,
PRE=WP#=0V/Vcc -1mA
Stand-by Current (CMOS) ICC5 CE#=Vcc-0.2,
PRE=WP#=0V/Vcc -1050uA
Input Leakage Current ILI VIN=0 to Vcc (max) - - ±10 uA
Output Leakage Current ILO VOUT=0 to Vcc (max) - - ±10 uA
Input High Voltage VIH - 2 - Vcc+0.3 V
Input Low Voltage VIL - -0.3 - 0.8 V
Output High Voltage Level VOH IOH=-100uA - - - V
IOH=-400uA 2.4 - - V
Output Low Voltage Level VOL IOL=100uA - - - V
IOL=2.1mA - - 0.4 V
Output Low Current (RB#) IOL
(RB#) VOL=0.2V - - - mA
VOL=0.4V 8 10 - mA
Table 8: DC and Operating Characteristics
Parameter Value
3.3Volt
Input Pulse Levels 0.4V to 2.4V
Input Rise and Fall Times 5ns
Input and Output Timing Levels 1.5V
Output Load (2.7V - 3.3V) 1 TTL GATE and CL=50pF
Output Load (3.0V - 3.6V) 1 TTL GATE and CL=100pF
Table 9: AC Conditions
Rev 0.6 / Nov. 2005 19
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Item Symbol Test Condition Min Max Unit
Input / Output Capacitance CI/O VIL=0V - 10 pF
Input Capacitance CIN VIN=0V - 10 pF
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter Symbol Min Typ Max Unit
Program Time tPROG - 200 500 us
Dummy Busy Time for the Lock or Lock-tight Block tLBSY -510us
Number of partial Program Cycles in the same page Main Array NOP - - 1 Cycles
Spare Array NOP - - 2 Cycles
Block Erase Time tBERS -23ms
Table 11: Program / Erase Characteristics
Rev 0.6 / Nov. 2005 20
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Parameter Symbol 3.3Volt Unit
Min Max
CLE Setup time tCLS 0ns
CLE Hold time tCLH 10 ns
CE# setup time tCS 0ns
CE# hold time tCH 10 ns
WE# pulse width tWP 25(1) ns
ALE setup time tALS 0ns
ALE hold time tALH 10 ns
Data setup time tDS 20 ns
Data hold time tDH 10 ns
Write C y cle time tWC 50 ns
WE# High hold time tWH 15 ns
Data Transfer from Cell to register tR10 us
ALE to RE# Delay tAR 10 ns
CLE to RE# Delay tCLR 10 ns
Ready to RE# Low tRR 20 ns
RE# Pulse Width tRP 25 ns
WE# High to Busy tWB 100 ns
Read C ycle Ti me tRC 50 ns
RE# Access Time tREA 30 ns
RE# High to Output High Z tRHZ 30 ns
CE# High to Output High Z tCHZ 20 ns
RE# or CE# high to Output hold tOH 10 ns
RE# High Hold Time tREH 15 ns
Output High Z to RE# low tIR 0ns
CE# Access Time tCEA 45 ns
WE# High to RE# low tWHR 60 ns
Last RE High to busy (at sequential read) tRB 100 ns
CE# High to Ready (in case of interception by CE# at read) tCRY 60+tr(R/B#)(4) ns
CE# High Hold Time (at the last serial read)(3) tCEH 100 ns
Device Resetting Time (Read / Program / Erase) tRST 5/10/500(2) us
Write Protection time tWW(5) 100 ns
Table 12: AC Timing Characteristics
NOTE:
1. If tCS is less than 10ns tWP must be minimum 35ns, otherwise , tWP may be minimum 25ns.
2. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
3. To break the sequential read cycle, CE# must be held for longer time than tCEH.
4. The time to Ready depends on the value of the pull-up resistor tied R/B# pin.ting time.
5. Program / Erase Enable Operation : tWP# high to tWE# High.
Program / Erase Disable Operation : tWP# Low to tWE# High.
Rev 0.6 / Nov. 2005 21
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
IO Pagae
Program Block
Erase Read CODING
0 Pass / Fail Pass / Fail NA Pass: ‘0’ Fail: ‘1’
1NA NA NA
Pass: ‘0’ Fail: ‘1’
(Only for Cache Program, else Don’t
care)
2NA NA NA -
3NA NA NA -
4NA NA NA -
5 Ready/Busy Ready/Busy Ready/Busy Active: ‘0’ Idle: ‘1’
6 Ready/Busy Ready/Busy Ready/Busy Busy: ‘0’ Ready’: ‘1’
7 Write Protect Write Protect Write Protect Protected: ‘0’ Not
Protected: ‘1’
Table 13: Status Register Coding
DEVICE IDENTIFIER BYTE DESCRIPTION
1st Manufacturer Code
2nd Device Identifier
Table 14: Device Identifier Coding
Part Number Voltage Bus Width Manufacture
Code Device Code
HY27US08281A 3.3V x8 ADh 73h
HY27US16281A 3.3V x16 ADh 53h
Table 15: Read ID Data Table
Rev 0.6 / Nov. 2005 22
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Figure 5: Command Latch Cycle
W&/
6
W&6
W:3
&RPPDQG
&/(
&(
:(
$/(
,2a
W'+W'6
W$/6 W$/+
W&/+
W&+
Table 16: Lock Status Code
Rev 0.6 / Nov. 2005 23
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
W&/6
W&6 W:& W:&
VW$GG
W:3W:3 W:3
W:+ W:+
W$/6 W$/6 W$/6W$/+ W$/+ W$/+
W'6 W'6 W'6
W'+ W'+ W'+
QG$GG UG$GG
&/(
&(
:(
$/(
,2a
Figure 6: Address Latch Cycle
Rev 0.6 / Nov. 2005 24
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
W:&W$/6
W&/+
W&+
W:3
W:+
',1 ',1 ',1ILQDO
W:+
W'+ W'+ W'+
W'6 W'6 W'6
W:3 W:3
&/(
$/(
&(
,2[
:(
Figure 8: Sequential Out Cycle after Read (CLE=L, WE#=H, ALE=L)
t
CEA
t
REA
t
RP
t
REA
t
RHZ
t
RHZ*
Dout Dout Dout
t
CHZ*
t
OH
t
OH
t
REA
t
REH
t
RC
t
RR
Notes : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
CE
RE
R/B
I/Ox
Figure 7. Input Data Latch Cycle
Rev 0.6 / Nov. 2005 25
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Figure 9: Status Read Cycle
W&/6
W&/5
W&/+
W&6
W&+
W:3
W:+5
W&($
W'6 W5($
W&+=
W5+=
K 6WDWXV2XWSXW
W'+ W,5
&(
:(
,2
&/(
5(
&/(
&(
:(
$/(
5(
,2a
5%
W:&
W&(+
W&+=
W&5<
W5+=
W5&
W5
W$5
W:%
W53
KRUK &RODGG 5RZDGG 5RZDGG 'RXW1 'RXW1 'RXW1 'RXW
W5%
&ROXPQ
$GGUHVV 3DJH5RZ$GGUHVV
%XV\
Figure 10: Read1 Operation (Read One Page)
Rev 0.6 / Nov. 2005 26
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
&/(
&(
:(
$/(
5(
,2
a
5%
KRUK &RODGG 5RZDGG 5RZDGG 'RXW1 'RXW1 'RXW1
%XV\
&ROXPQ
$GGUHVV 5RZ$GGUHVV
W53
W5&
W5
W:%
W$5
W&+=
Figure 11: Read1 Operation inter cepted by CE#
&/(
&(
:(
$/(
5(
,2a
5%
W5
W$5
W:%
W55
K &RODGG 5RZDGG 5RZDGG 'RXW
0 'RXW
0$GGUHVV
$$9DOLG$GGUHVV
$$'RQW¶FDUH
6HOHFWHG
5RZ
6WDUW
$GGUHVV0
Figure 12: Read2 Operation (Read One Page)
Rev 0.6 / Nov. 2005 27
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
&/(
&(
:(
$/(
5(
,2a
5%
K &RODGG 5RZDGG
5RZDGG
'RXW
1'RXW
1 'RXW
'RXW
'RXW
'RXW
0
12XWSXW
0
2XWSXW
%XV\ %XV\
5HDG\
Figure 13: Sequential Row Read Operation Within a Block
Rev 0.6 / Nov. 2005 28
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Figure 14: Page Program Operation
&/(
$/(
&(
5(
5%
,2[
:(
W:&
K &RO$GG
6HULDO'DWD
,QSXW&RPPDQG &ROXPQ
$GGUHVV
5RZ
$GGUHVV
5HDG6WDWXV
&RPPDQG
3URJUDP
&RPPDQG
,2R 6XFFHVVIXO3URJUDP
,2R (UURULQ3URJUDP
XSWR%\WH
6HULDO,QSXW
5RZ$GG 5RZ$GG 'LQ
1'LQ
0K K ,2R
W:& W:&
W:% W352*
Rev 0.6 / Nov. 2005 29
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
W:&
W:%
W5
W352*
,2
K
$K
5RZDGG 5RZDGG&RODGG 5RZDGG 5RZDGG&RODGG
K
&ROPQ
$GGUHVV 5RZ$GGUHVV &ROPQ
$GGUHVV 5RZ$GGUHVV 5HDG6WDWXV
&RPPDQG
%XV\
%XV\
,2 6XFFHVVIXO3URJUDP
,2 (UURULQ3URJUDP
&RS\%DFN'DWD
,QSXW&RPPDQG KZULWHF\FOHQRPRUH
&/(
&(
:(
$/(
5(
,2
a
5%
Figure 15 : Copy Back Program
Rev 0.6 / Nov. 2005 30
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
W:&
&/(
&(
:(
$/(
5(
,2a
5%
W:% W%(56
%86<
K ,2'K
5RZDGG 5RZDGG
K
$XWR%ORFN(UDVH6HWXS&RPPDQG
(UDVH&RPPDQG
5HDG6WDWXV
&RPPDQG
,2 6XFFHVVIXO(UDVH
,2 (UURULQ(UDVH
3DJH5RZ$GGUHVV
Figure 16: Block Erase Operation (Erase One Block)
K
&/(
&(
:(
$/(
5(
,2a K
W5($
W$5
5HDG,'&RPPDQG $GGUHVVF\FOH 0DNHU&RGH 'HYLFH&RGH
$'K K
Figure 17: Read ID Operation
Rev 0.6 / Nov. 2005 31
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
$K
/RFN&RPPDQG
:3
&/(
&(
:(
,2[
Figure 18: Lock Command
:3
&/(
&(
:(
$/(
,2[ K
8QRFN&RPPDQG 6WDUW%ORFN$GGUHVVF\FOHV 8QORFN&RPPDQG (QG%ORFN$GGUHVVF\FOHV
K$GG $GG $GG $GG
Figure 19: Unlock Command Sequence
Rev 0.6 / Nov. 2005 32
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
:3
&/(
&(
:(
,2[ &K
/RFNWLJKW&RPPDQG
Figure 20: Lock Tight Command
:3
&/(
$/(
&(
:(
,2[
5(
$K $GG $GG 'RXW
5HDG%ORFN/RFN
VWDWXV&RPPDQG
%ORFN$GGUHVVF\FOH
W:+5
%ORFN/RFN6WDWXV
Figure 21: Lock Status Read Timing
Rev 0.6 / Nov. 2005 33
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
9
9FF
:(
&(
$/(
&/(
5%
35(
W5
5(
,2[
'DWD 'DWD 'DWD
'DWD2XWSXW
/DVW
'DWD
))K
W567
:(
$/(
&/(
5(
,2
5%
Figure 23: Reset Operation
Figure 22: Automatic Read at Power On
Rev 0.6 / Nov. 2005 34
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
9FF
W
9
7+
XV
:3
:(
Figure 24: Power On/Off Timing
VTH = 2.5 Volt for 3.3 Volt Supply devices
Rev 0.6 / Nov. 2005 35
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
5SYDOXHJXLGHQFH
5SPLQ
ZKHUH,/LVWKHVXPRIWKHLQSXWFXUUQWVRIDOOGHYLFHVWLHGWRWKH5%SLQ
5SPD[LVGHWHUPLQHGE\PD[LPXPSHUPLVVLEOHOLPLWRIWU
#9FF 97D &&
/
S)
)LJ5SYVWUWI5SYVLEXV\
9FF0D[9
2/0D[ 9
P$,/,2/,/
5S LEXV\
5SRKP
LEXV\
LEXV\>$@
WUWI>V@
WI
%XV\
5HDG\ 9FF
9
WUWI
9
9FF
Q P
N N N N
Q P
Q P
*1'
'HYLFH
RSHQGUDLQRXWSXW
5%
Figure 25: Ready/Busy Pin electrical specifications
Rev 0.6 / Nov. 2005 36
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Figure 26: Lock/Unlock FSM Flow Cart
['HYLFHV
$UHD$
K
$UHD%
K
$UHD&
K
%\WHV %\WHV %\WHV
$%&
3RLQWHU
KKK
3DJH%XIIHU
['HYLFHV
$UHD$
K
$UHD&
K
%\WHV %\WHV
$&
3RLQWHU
KK
3DJH%XIIHU
Figure 27: Pointer operations
Rev 0.6 / Nov. 2005 37
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
K K $GGUHVV
,QSXWV 'DWD,QSXW K K K $GGUHVV
,QSXWV 'DWD,QSXW K
K K $GGUHVV
,QSXWV 'DWD,QSXW K K K $GGUHVV
,QSXWV 'DWD,QSXW K
K K $GGUHVV
,QSXWV 'DWD,QSXW K K K $GGUHVV
,QSXWV 'DWD,QSXW K
$5($$
$5($%
$5($&
,2
,2
,2
$UHDV$%&FDQEHSURJUDPPHGGHSHQGLQJRQKRZPXFKGDWDLVLQSXW6XEVHTXHQWKFRPPDQGVFDQEHRPLWWHG
$UHDV%&FDQEHSURJUDPPHGGHSHQGLQJRQKRZPXFKGDWDLVLQSXW7KHKFRPPDQGPXVWEHUHLVVXHGEHIRUHHDFKSURJUDP
2QO\$UHDV&FDQEHSURJUDPPHG6XEVHTXHQWKFRPPDQGFDQEHRPLWWHG
Figure 28: Pointer Operations for porgramming
Rev 0.6 / Nov. 2005 38
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
System Interface Using CE don’t care
To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below.
So, it is possible to conn ect NAND Flash to a mi croprocess or. The only function that was removed from standard NAND
Flash to make CE don’t care read operation was disabling of the automatic sequential read function.
jsl
hsl
pVv
jl
~l
_W XWzGhUOZjP kGpkGp
jlGNT
Figure 29: Program Operation with CE don’t-care.
,IVHTXHQWLDOURZUHDGHQDEOHG
&(PXVWEHKHOGORZGXULQJW5 &(GRQ¶WFDUH
W5
K K
&/(
&(
5(
$/(
5%
:(
,2[
6WDUW$GG&\FOH 'DWD2XWSXWVHTXHQWLDO
Figure 30: Read Operation with CE don’t-care.
Rev 0.6 / Nov. 2005 39
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Bad Block Management
Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the
blocks are va lid. A Bad Block does not affect the perf ormance of valid blocks because it is isolated from the bit line and
common source line by a select transi stor. The devices are supplied with all the locations inside valid blocks
erased(FFh).The Bad Block Information is written prior to shipping. Any block where the 6th Byte/ 1st Word in the
spare area of the 1st or 2 nd page (if the 1st p age is Bad) d oes not c ontai n FFh is a Bad Blo ck. The Bad Bloc k I nf orma-
tion must be read before any erase is attempted as the Bad Block Information may be erased. For the system to be
able to recognize the Bad Blocks based on the original information it is recommended to create a Bad Block table fol-
lowing the flowchart shown in Figure 31. The 1st block, which is placed on 00h block address is guaranteed to be a
valid block.
Block Replacement
Over the lifetime of the device additional Bad Blocks may dev elop. In this case the block has to be replaced by copying
the data to a v alid block. These additional Bad Blocks ca n be identified as attempts to progr am or er ase them will give
errors in the Status Register.
As the failure of a page progr am operation doe s not affect the data in other pages in the same block, the block can be
replaced by re-pro gramming the current data and copying the rest of the replaced block to an av ailable v alid block.The
Copy Back Program command can be used to copy the data to a valid block.
See the “Copy Back Program” section for more details.
Refer to Table 17 for the recommended procedure to follow if an error occurs during an operation.
Operation Recommended Procedure
Erase Block Replacement
Program Block Replacement or ECC
Read ECC
Table 17: Block Failure
<HV
<HV
1R
1R
67$57
%ORFN$GGUHVV
%ORFN
'DWD
))K"
/DVW
EORFN"
(1'
,QFUHPHQW
%ORFN$GGUHVV
8SGDWH
%DG%ORFNWDEOH
Figure 31: Bad Block Management Flowchart
Rev 0.6 / Nov. 2005 40
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Write Protect Operation
The Erase and Program Operations are automatically reset when WP goes Low (tWW = 100ns, min). The operations
are enabled and disabled as follows (Figure 32~35)
::
W
K K
:(
,2[
:3
5%
K K
W::
:(
,2[
:3
5%
Figure 32: Enable Programming
Figure 33: Disable Programming
Rev 0.6 / Nov. 2005 41
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
K
W
'K
::
:(
,2[
:3
5%
K
W::
'K
:(
,2[
:3
5%
Figure 34: Enable Erasing
Figure 35: Disable Erasing
Rev 0.6 / Nov. 2005 42
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Table 18: 48pin-TSOP1, 12 x 20mm, Package Mechanical Data
Symbol millimeters
Min Typ Max
A1.200
A1 0.050 0.150
A2 0.980 1.030
B 0.170 0.250
C 0.100 0.200
CP 0.100
D 11.910 12.000 12.120
E 19.900 20.000 20.100
E1 18.300 18.400 18.500
e 0.500
L 0.500 0.680
alpha 0 5
Figure 36: 48pin-TSOP1, 12 x 20mm, Package Outline
'
$
',(
$
H
%
/
Į
(
(
&
&3
$
Rev 0.6 / Nov. 2005 43
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
$
$
$
&
'
(
&
H%
$QJOH DOSKD
'
Į
&3
Figure 37. 48pin-USOP1, 12 x 17mm, Package Outline
Symbol millimeters
Min Typ Max
A0.650
A1 0 0.050 0.080
A2 0.470 0.520 0.570
B 0.130 0.160 0.230
C 0.065 0.100 0.175
C10.450 0.650 0.750
CP 0.100
D 16.900 17.000 17.100
D1 11.910 12.000 12.120
E 15.300 15.400 15.500
e0.500
alpha 0 8
Table 19: 48pin-USOP1, 12 x 17mm, Package Mechanical Data
Rev 0.6 / Nov. 2005 44
HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
MARKING INFORMATION - TSOP1 / USOP1
Package M arking Exam ple
TSOP1
/
USOP1
K O R
H Y 2 7 x S x x 2 8 x A
x x x x Y W W x x
- hynix
- K O R
- H Y27xSxx28xA xxxx
HY : Hynix
2 7 : NAND Flash
x : Pow er Supply
S: Classification
x x : B it O r ga n iza tion
28: Density
x: Mode
A: Version
x : Package Type
x : Package M aterial
x : O perating T em perature
x : Bad Block
- Y : Year (ex: 5=year 2005, 06= year 2006)
- w w: Work Week (ex: 12= work week 12)
- xx : Process C ode
Note
- C ap ita l Le tter
- Sma ll Letter
: H ynix S ymb ol
: Or ig in C o u n try
: U (2.7V~ 3.6V )
: Single Level Cell+Double Die+ Sm all Block
: 08(x8), 16(x16)
: 128 M bit
: 1(1nCE & 1R/nB; Sequential Row R ead Enable)
2 (1 n C E & 1 R / nB ; Se q ue n tia l R o w R e a d D is ab le )
: 2n d G e ne ration
: T(48-TSO P1), S(48-USO P1)
: Blank(N orm al), P(Lead Free)
: C (0℃~70℃), E(-25 ℃~85℃)
M(-30℃~85℃), I(-40 ℃~85℃)
: B(Included Bad Block), S(1~ 5 Bad Block),
P(All G ood Block)
: F ix ed Ite m
: N o n-fixe d Ite m
: Pa rt N u m b er
