APTGT75X120RTP3
APTG
T75
X
12
0
B
TP
3
APTGT75X120BTP3 – Rev 0, September 2003
APT website – http://www.advancedpower.com
1
-
4
All ratings @ T
j
= 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
RRM
Repetitive Peak Reverse Voltage 1600 V
I
D
DC Forward Current T
C
= 80°C 80
T
j
= 25°C 500
I
FSM
Surge Forward Current t
p
= 10ms T
j
= 150°C 400
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGT75X120RTP3: Without Brake (Pin 7 & 14 not connected)
9
8
7
4 5 6
22
23
24
1 2 3
17181920 10111214 1316 15
21
VCES = 1200V
IC = 75A @ Tc = 80°C
Application
• AC Motor control
Features
• Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Low conduction losses
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
•
Low profile
Input rectifier bridge + Brake
+ 3 Phase Bridge
Trench IGBT
®
Power Module
APTGT75X120RTP3
APTG
T75
X
12
0
B
TP
3
APTGT75X120BTP3 – Rev 0, September 2003
APT website – http://www.advancedpower.com
2
-
4
IGBT & Diode Brake
(only for APTGT75X120BTP3)
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 60
I
C
Continuous Collector Current T
C
= 80°C 50
I
CM
Pulsed Collector Current T
C
= 25°C 100
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 200 W
I
F
DC Forward Current T
C
= 80°C 25 A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 105
I
C
Continuous Collector Current T
C
= 80°C 75
I
CM
Pulsed Collector Current T
C
= 25°C 150
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 350 W
RBSOA Reverse Bias Save Operating Area T
j
= 125°C 150A @ 1100V
I
F
DC Forward Current T
C
= 80°C 75
I
FRM
Repetitive Peak Forward Current t
p
= 1ms 150 A
2. Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
I
R
Reverse Current V
R
= 1600V T
j
= 150°C
3 mA
V
F
Forward Voltage I
F
= 75A T
j
= 150°C 1.2 V
R
thJC
Junction to Case 0.65 °C/W
IGBT Brake & Diode
(only for APTGT75X120BTP3)
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 1200V 400 µA
T
j
= 25°C 1.4 1.7 2.1
V
CE(on)
Collector Emitter on Voltage V
GE
= 15V
I
C
= 50A T
j
= 125°C 2.0 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 2mA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 600 nA
C
ies
Input Capacitance 3600
C
oes
Output Capacitance 188
C
res
Reverse Transfer Capacitance
V
GE
= 0V,
V
CE
= 25V
f = 1MHz 163
pF
T
j
= 25°C 1.6
V
F
Forward Voltage V
GE
= 0V
I
F
= 25A T
j
= 125°C 1.8 V
IGBT 0.6
R
thJC
Junction to Case Diode 1.2 °C/W
APTGT75X120RTP3
APTG
T75
X
12
0
B
TP
3
APTGT75X120BTP3 – Rev 0, September 2003
APT website – http://www.advancedpower.com
3
-
4
IGBT & Diode Inverter
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 500µA
1200
V
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 1200V 4 mA
T
j
= 25°C 1.7 2.1
V
CE(on)
Collector Emitter on Voltage V
GE
=15V
I
C
= 75A T
j
= 125°C 2.0 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 3 mA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 500 nA
C
ies
Input Capacitance 5345
C
oss
Output Capacitance 280
C
rss
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz 242
pF
T
d(on)
Turn-on Delay Time 260
T
r
Rise Time 30
T
d(off)
Turn-off Delay Time 420
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7Ω 65
ns
T
d(on)
Turn-on Delay Time 285
T
r
Rise Time 45
T
d(off)
Turn-off Delay Time 520
T
f
Fall Time 90
ns
E
off
Turn off Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7Ω 9.4 mJ
T
j
= 25°C 1.6 2.2
V
F
Forward Voltage V
GE
= 0V
I
F
= 75A T
j
= 125°C 1.6 V
T
j
= 25°C 8
Q
rr
Reverse Recovery Charge I
F
= 75A
V
R
= 600V
di/dt=825A/µs T
j
= 125°C 14 µC
IGBT 0.35
R
thJC
Junction to Case Diode 0.58 °C/W
Temperature sensor NTC
Symbol
Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 5 kΩ
B
25/50
T
25
= 298.16 K 3375 K
−
=
TT
B
R
R
T
11
exp
25
50/25
25
3. Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
Torque Mounting torque To Heatsink M5 3.3 N.m
Wt Package Weight 300 g
T: Thermistor temperature
R
T
: Thermistor value at T
APTGT75X120RTP3
APTG
T75
X
12
0
B
TP
3
APTGT75X120BTP3 – Rev 0, September 2003
APT website – http://www.advancedpower.com
4
-
4
4. Package outline
PIN 24
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
