TO-92 (Ammopack)
SOT-223
123
4
123
Int_schem_nTnZ_SOT_223
D(2, 4)
G(1)
S(3)
Features
Order code VDS RDS(on) max. IDPackage
STN1HNK60
600 V 8.5 Ω 0.4 A
SOT-223
STQ1HNK60R-AP TO-92
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
Product status
STN1HNK60
STQ1HNK60R-AP
N-channel 600 V, 7.3 Ω typ., 0.4 A SuperMESH™ Power MOSFETs
in a SOT-223 and TO-92 packages
STN1HNK60, STQ1HNK60R-AP
Datasheet
DS12594 - Rev 1 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
SOT-223 TO-92
VDS Drain-source voltage 600 V
VDGR Drain-gate voltage (RGS = 20 kΩ) 600 V
VGS Gate- source voltage ±30 V
IDDrain current (continuous) at TC = 25 °C 0.4 A
IDDrain current (continuous) at TC = 100 °C 0.25 A
IDM (1) Drain current (pulsed) 1.6 A
PTOT Total dissipation at TC = 25 °C 3.3 3 W
dv/dt (2) Peak diode recovery voltage slope 3 V/ns
TjOperating junction temperature range
-55 to 150 °C
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 0.4 A, di/dt ≤ 100 A/μs, VDD ≤ V(BR)DSS.
Table 2. Thermal data
Symbol Parameter
Value
Unit
SOT-223 TO-92
Rthj-amb Thermal resistance junction-ambient 120 °C/W
Rthj-lead Thermal resistance junction-lead 40 °C/W
Rthj-pcb (1) Thermal resistance junction-pcb 37.87 °C/W
1. When mounted on FR-4 board of 1 in2, 2 oz Cu, t < 10 s.
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 0.4 A
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 25 mJ
STN1HNK60, STQ1HNK60R-AP
Electrical ratings
DS12594 - Rev 1 page 2/16
2Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage ID = 1 mA, VGS = 0 V 600 V
IDSS Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V 1 µA
VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 50 µA
IGSS Gate body leakage
current VDS = 0 V, VGS = ±30 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.25 3 3.7 V
RDS(on) Static drain-source on
resistance VGS = 10 V, ID = 0.5 A 7.3 8.5 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 V -
156
pF
Coss Output capacitance 23.5
Crss Reverse transfer
capacitance 3.8
QgTotal gate charge VDD = 480 V, ID = 1 A, VGS = 0 to 10 V
(see Figure 16. Test circuit for gate charge
behavior)
-
7 10
nC
Qgs Gate-source charge 1.1
Qgd Gate-drain charge 3.7
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 0.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15. Test circuit for resistive load
switching times and Figure 20. Switching
time waveform)
-
6.5
- ns
trRise time 5
td(off) Turn-off delay time 19
trFall time 25
STN1HNK60, STQ1HNK60R-AP
Electrical characteristics
DS12594 - Rev 1 page 3/16
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current
-
0.4
A
ISDM (1) Source-drain current
(pulsed) 1.6
VSD (2) Forward on voltage ISD = 0.4 A, VGS = 0 V - 1.6 V
trr Reverse recovery time ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25 V (see Figure 17. Test circuit for
inductive load switching and diode recovery
times)
-
140 ns
Qrr Reverse recovery charge 240 nC
IRRM Reverse recovery current 3.3 A
trr Reverse recovery time ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25 V, TJ = 150 °C (see Figure
17. Test circuit for inductive load switching
and diode recovery times)
-
229 ns
Qrr Reverse recovery charge 377 nC
IRRM Reverse recovery current 3.3 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
STN1HNK60, STQ1HNK60R-AP
Electrical characteristics
DS12594 - Rev 1 page 4/16
2.1 Electrical characteristics curves
Figure 1. Safe operating area for SOT-223 Figure 2. Thermal impedance for SOT-223
Figure 3. Safe operating area for TO-92 Figure 4. Thermal impedance for TO-92
Figure 5. Output characterisics Figure 6. Transfer characteristics
STN1HNK60, STQ1HNK60R-AP
Electrical characteristics curves
DS12594 - Rev 1 page 5/16
Figure 7. Gate charge vs gate-source voltage
ID=1A
VDS=480V
Figure 8. Capacitance variations
Figure 9. Static drain-source on-resistance Figure 10. Normalized gate thereshold voltage vs
temperature
Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain forward characteristics
STN1HNK60, STQ1HNK60R-AP
Electrical characteristics curves
DS12594 - Rev 1 page 6/16
Figure 13. Normalized V(BR)DSS vs Temperature Figure 14. Maximum avalanche energy vs temperature
0.4
STN1HNK60, STQ1HNK60R-AP
Electrical characteristics curves
DS12594 - Rev 1 page 7/16
3Test circuits
Figure 15. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200
μF VDD
3.3
μF
+
pulse width
VGS
Figure 16. Test circuit for gate charge behavior
AM01469v1
47 kΩ 1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST 100 Ω
100 nF
D.U.T.
+
pulse width
VGS
2200
μF
VG
VDD
Figure 17. Test circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T.
SB
G
25 Ω
AA
BB
RG
G
D
S
100 µH
µF
3.3 1000
µF VDD
D.U.T.
+
_
+
fast
diode
Figure 18. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD
+
pulse width
Vi
3.3
µF
2200
µF
Figure 19. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
Figure 20. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STN1HNK60, STQ1HNK60R-AP
Test circuits
DS12594 - Rev 1 page 8/16
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 SOT-223 package information
Figure 21. SOT-223 package outline
0046067_14
STN1HNK60, STQ1HNK60R-AP
Package information
DS12594 - Rev 1 page 9/16
Table 8. SOT-223 package mechanical data
Dim.
mm
Min. Typ. Max.
A 1.8
A1 0.02 0.1
B 0.6 0.7 0.85
B1 2.9 3 3.15
c 0.24 0.26 0.35
D 6.3 6.5 6.7
e 2.3
e1 4.6
E 3.3 3.5 3.7
H 6.7 7.0 7.3
V 10º
Figure 22. SOT-223 recommended footprint (dimensions are in mm)
0046067
STN1HNK60, STQ1HNK60R-AP
SOT-223 package information
DS12594 - Rev 1 page 10/16
4.2 TO-92 Ammopack package information
Figure 23. TO-92 Ammopack package outline
W
W1
W0
W2
A1
d
D0
H1
H
H0
L
l1
F1 F2
P2
P0
delta H
T2 T1
T
t
F3
H3
0050910_Rev_22
STN1HNK60, STQ1HNK60R-AP
TO-92 Ammopack package information
DS12594 - Rev 1 page 11/16
Table 9. TO-92 Ammopack mechanical data
Dim.
mm
Min. Typ. Max.
A1 4.80
T 3.80
T1 1.60
T2 2.30
d 0.45 0.47 0.48
P0 12.50 12.70 12.90
P2 5.65 6.35 7.05
F1, F2 2.40 2.50 2.94
F3 4.98 5.08 5.48
delta H -2.00 2.00
W 17.50 18.00 19.00
W0 5.50 6.00 6.50
W1 8.50 9.00 9.25
W2 0.50
H 18.50 21.00
H0 15.50 16.00 18.20
H1 25.00 27.00
H3 0.50 1.00 2.00
D0 3.80 4.00 4.20
t 0.90
L 11.00
I1 3.00
delta P -1.00 1.00
STN1HNK60, STQ1HNK60R-AP
TO-92 Ammopack package information
DS12594 - Rev 1 page 12/16
5Ordering information
Table 10. Order codes
Order code Marking Package Packing
STN1HNK60 N1HNK60 SOT-223 Tape and reel
STQ1HNK60R-AP 1HNK60R TO-92 Ammopak
STN1HNK60, STQ1HNK60R-AP
Ordering information
DS12594 - Rev 1 page 13/16
Revision history
Table 11. Document revision history
Date Version Changes
20-Aug-2018 1 Initial release.
STN1HNK60, STQ1HNK60R-AP
DS12594 - Rev 1 page 14/16
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics curves ..................................................5
3Test circuits .......................................................................8
4Package information...............................................................9
4.1 SOT-223 package information ....................................................9
4.2 TO-92 Ammopack package information ..........................................10
5Ordering information .............................................................13
Revision history .......................................................................14
STN1HNK60, STQ1HNK60R-AP
Contents
DS12594 - Rev 1 page 15/16
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© 2018 STMicroelectronics – All rights reserved
STN1HNK60, STQ1HNK60R-AP
DS12594 - Rev 1 page 16/16
