For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
v01.0310
General Description
Features
Functional Diagram
Low Noise Figure: 1.8 dB
High Gain: 19 dB
High P1dB Output Power: 16 dBm
Single Supply: +3.5 V @ 80 mA
Output IP3: +28 dBm
50 Ohm matched Input/Output
16 Lead 3x3mm SMT Package: 9mm
Electrical Specications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [2]
Typical Applications
This HMC902LP3E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC902LP3E is a GaAs MMIC Low Noise
Amplier housed in a leadless 3x3 mm plastic sur-
face mount package. The amplier operates between
5 and 10 GHz, providing 19 dB of small signal
gain, 1.8 dB noise gure, and output IP3 of +28 dBm,
while requiring only 80 mA from a +3.5V supply. The
P1dB output power of +16 dBm enables the LNA to
function as a LO driver for balanced, I/Q or image
reject mixers. The HMC902LP3E also features
I/Os that are DC blocked and internally matched to
50 Ohms, making it ideal for high capacity microwave
radios and C-Band VSAT applications.
HMC902LP3E
Parameter Min. Typ. Max. Units
Frequency Range 5 - 10 GHz
Gain [1] 17 19.5 dB
Gain Variation over Temperature 0.01 dB / °C
Noise Figure [1] 1.8 2.2 dB
Input Return Loss 12 dB
Output Return Loss 15 dB
Output Power for 1 dB Compression [1] 16 dBm
Saturated Output Power (Psat) [1] 17.5 dBm
Output Third Order Intercept (IP3) 28 dBm
Supply Current (Idd)
(Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.) 80 110 mA
[1] Board loss removed from gain, power and noise gure measurement.
[2] Vgg1 = Vgg2 = open for normal, self-biased operation.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
HMC902LP3E
v01.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Gain vs. Temperature [1]
Output Return Loss vs. Temperature
Broadband Gain & Return Loss [1]
Input Return Loss vs. Temperature
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
[1] Board loss removed from gain, power and noise gure measurement.
-50
-40
-30
-20
-10
0
4 5 6 7 8 9 10 11
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
10
15
20
25
30
35
4 5 6 7 8 9 10 11
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
4 5 6 7 8 9 10 11
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
4 5 6 7 8 9 10 11
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
15
17
19
21
23
25
4 5 6 7 8 9 10 11
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-25
-15
-5
5
15
25
3 5 7 9 11 13
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
HMC902LP3E
v01.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Psat vs. Temperature [1]
Power Compression @ 7 GHz [1]
P1dB vs. Temperature [1]
Reverse Isolation vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 7 GHz [1]
-4
0
4
8
12
16
20
24
-21 -18 -15 -12 -9 -6 -3 0 3
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
7
3 3.5 4
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Vdd (V)
0
5
10
15
20
25
30
0
20
40
60
80
100
120
-0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0
Gain
IP3
Idd
GAIN (dB), IP3 (dBm)
Idd (mA)
Vgg1, Vgg2 Gate Volltage (Vdc)
-60
-50
-40
-30
-20
-10
0
4 5 6 7 8 9 10 11
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
4 5 6 7 8 9 10 11
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
4 5 6 7 8 9 10 11
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
Gain, Output IP3 & Idd vs. Gate
Voltage @ 7 GHz [2][3]
[1] Board loss removed from gain, power and noise gure measurement.
[2] Board loss removed from gain measurement
[3] Data taken at Vdd1 = Vdd2 = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Current vs. Input Power @ 7 GHz
78
80
82
84
86
88
-30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 3
Idd (mA)
INPUT POWER (dBm)
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Drain Bias Voltage +4.5V
RF Input Power +10 dBm
Gate Bias Voltage, Vgg1 -0.8V to +0.2V
Gate Bias Voltage, Vgg2 -0.8V to +0.2V
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 7 mW/°C above 85 °C) 0.45 W
Thermal Resistance
(Channel to ground paddle) 143.8 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
HMC902LP3E
v01.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL
BE 0.05mm MAX.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND
PATTERN.
Part Number Package Body Material Lead Finish Package Marking [1]
HMC902LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn [2] 902
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
HMC902LP3E
v01.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 5, 8,
11 - 13, 16 N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to RF/
DC ground externally.
3 RFIN This pin is AC coupled
and matched to 50 Ohms
4, 9 GND Package bottom has exposed metal ground paddle
that must be connected to RF/DC ground.
6, 7 Vgg1, Vgg2
Optional gate control for amplier. If left open, the amplier
will run self-biased at standard current. Negative volt-
age applied will reduce drain current. External capacitors
required, see application circuits herein.
10 RFOUT This pin is AC coupled
and matched to 50 Ohms
14, 15 Vdd2, Vdd1 Power supply voltage for the amplier. See assembly
for required external components.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
HMC902LP3E
v01.0310
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Item Description
J1, J2 SMA Connector
J3, J4, J6 - J8 DC Pins
C1, C4, C7, C10 100 pF Capacitor, 0402 Pkg.
C2, C5, C8, C11 10 KpF Capacitor, 0402 Pkg.
C3, C6, C9, C12 4.7 µF Capacitor, Tantalum
U1 HMC902LP3E Amplier
PCB [2] 128395 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
List of Material for Evaluation PCB 129787 [1]
The circuit board used in this application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the pack-
age ground leads and exposed paddle should be
connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Evaluation PCB
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
HMC902LP3E
v00.0210
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Application Circuit - Standard (Self-Biased) Operation
Application Circuit - Gate Control, Reduced Current Operation
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
HMC902LP3E
v00.0210
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Notes:
