BSC057N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOMSW for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance RDS(on) @ VGS=4.5 V
• Excellent gate charge x RDS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDVGS=10 V, TC=25 °C 71 A
VGS=10 V, TC=100 °C 45
VGS=4.5 V, TC=25 °C 63
VGS=4.5 V,
TC=100 °C
40
VGS=4.5 V, TA=25 °C,
RthJA=50 K/W2)
15
Pulsed drain current3) ID,pulse TC=25 °C 284
Avalanche current, single pulse4) IAS TC=25 °C 50
Avalanche energy, single pulse
EAS ID=40 A, RGS=25 W25 mJ
Reverse diode dv/dtdv/dt
ID=50 A, VDS=24 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±16 V
Value
1) J-STD20 and JESD22
PG-TDSON-8
Type
Package
Marking
PG-TDSON-8
057N03MS
VDS
30
V
RDS(on),max
VGS=10 V
5.7
mW
VGS=4.5 V
7.2
ID
71
A
Product Summary
Rev. 2.1 page 1 2013-05-17
BSC057N03MS G
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation
Ptot TC=25 °C 45 W
TA=25 °C,
RthJA=50 K/W2)
2.5
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC bottom - - 2.8 K/W
top - - 20
Device on PCB
RthJA 6 cm2 cooling area2) - - 50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=1 mA 30 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=250 µA 1 - 2
Zero gate voltage drain current
IDSS
VDS=30 V, VGS=0 V,
Tj=25 °C
-0.1 1µA
VDS=30 V, VGS=0 V,
Tj=125 °C
-10 100
Gate-source leakage current
IGSS VGS=16 V, VDS=0 V -10 100 nA
Drain-source on-state resistance
RDS(on) VGS=4.5 V, ID=30 A -5.8 7.2 mW
VGS=10 V, ID=30 A -4.8 5.7
Gate resistance
RG0.6 1.3 2.3 W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=30 A
35 70 - S
3) See figure 3 for more detailed information
Value
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1 page 2 2013-05-17
BSC057N03MS G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -2300 3100 pF
Output capacitance
Coss -710 940
Reverse transfer capacitance
Crss -47 -
Turn-on delay time
td(on) -12 -ns
Rise time
tr-6.6 -
Turn-off delay time
td(off) -14 -
Fall time
tf-6.8 -
Gate Charge Characteristics5)
Gate to source charge
Qgs -6.9 9.2 nC
Gate charge at threshold
Qg(th) -3.7 4.9
Gate to drain charge
Qgd -3.3 5.5
Switching charge
Qsw -6.5 9.8
Gate charge total
Qg-14 19
Gate plateau voltage
Vplateau -3.0 - V
Gate charge total
Qg
VDD=15 V, ID=30 A,
VGS=0 to 10 V
-30 40
Gate charge total, sync. FET
Qg(sync)
VDS=0.1 V,
VGS=0 to 4.5 V
-12 17 nC
Output charge
Qoss VDD=15 V, VGS=0 V -18 25
Reverse Diode
Diode continuous forward current IS- - 41 A
Diode pulse current
IS,pulse - - 284
Diode forward voltage
VSD
VGS=0 V, IF=30 A,
Tj=25 °C
-0.87 1.1 V
Reverse recovery charge
Qrr
VR=15 V, IF=IS,
diF/dt=400 A/µs
- - 10 nC
5) See figure 16 for gate charge parameter definition
4) See figure 13 for more detailed information
TC=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=15 V, VGS=4.5 V,
ID=30 A, RG=1.6 W
VDD=15 V, ID=30 A,
VGS=0 to 4.5 V
Rev. 2.1 page 3 2013-05-17
BSC057N03MS G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC)
parameter: VGS
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-1
100
101
102
103
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-6
10-5
10-4
10-3
10-2
10-1
100
0.01
0.1
1
10
0 0 0 0 0 0 1
ZthJC [K/W]
tp [s]
0
10
20
30
40
50
0 40 80 120 160
Ptot [W]
TC [°C]
10 V
4.5 V
0
10
20
30
40
50
60
70
80
0 40 80 120 160
ID [A]
TC [°C]
Rev. 2.1 page 4 2013-05-17
BSC057N03MS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
6 V
10 V
0
2
4
6
8
10
0 10 20 30 40 50
RDS(on) [mW]
ID [A]
25 °C
150 °C
0
40
80
120
160
0 1 2 3 4 5
ID [A]
VGS [V]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
50
100
150
200
0 1 2 3
ID [A]
VDS [V]
0
20
40
60
80
100
120
140
160
0 40 80 120 160
gfs [S]
ID [A]
Rev. 2.1 page 5 2013-05-17
BSC057N03MS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
2
4
6
8
10
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
101
102
103
104
10
100
1000
10000
0 10 20 30
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
IF [A]
VSD [V]
Rev. 2.1 page 6 2013-05-17
BSC057N03MS G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
22
24
26
28
30
32
34
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
IAV [A]
tAV [µs]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35
VGS [V]
Qgate [nC]
Rev. 2.1 page 7 2013-05-17
BSC057N03MS G
Package Outline PG-TDSON-8-5
PG-TDSON-8-5: Outline
Footprint
Dimensions in mm
Rev. 2.1 page 8 2013-05-17
BSC057N03MS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.1 page 9 2013-05-17
BSC057N03MS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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reasonably be expected to cause the failure of that life-support device or system or to affect
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Rev. 2.1 page 10 2013-05-17