DB3-DB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
Hermetically Sealed Glass.
All external surface are corrosion resistant and
terminals are readily solderable.
Min Max Min Max
Case :DO-35 Solder Hot Dip Tin (Sn) lead finish 0.45 0.55 0.018 0.022
3.05 4.00 0.120 0.157
25.4 38.1 1.000 1.500
1.53 2.28 0.060 0.090
Package Packing Marking
DO-35 5K / 10" Reel DB3
DO-35 5K / 10" Reel DB3TG
Maximum Ratings
Notes:1. Valid provided that electrodes are kept at ambient temperature
HERMETICALLY SEALED GLASS
Features
Unit (mm) Unit (inch)
Designed for through-Hole Device Type Mounting.
20μsec
stability and protection against junction contamination.
Maximum Ratings and Electrical Characteristics
Mechanical Data
Terminal: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
A
Value
150
B
Dimensions
Junction and Storage Temperature Range -40 to + 125
D
IFRM
Part No.
DB3 RI
DB3TG RI
400Thermal Resistance (Junction to Ambient) (Note 1)
2A
Rating at 25°C ambient temperature unless otherwise specified.
Units
PDPower Dissipation
Symbol
Weight : 0.1255 gram (approximately)
Repetitive Peak Forward Current Pulse Width=
°C/WRθJA
°CTJ, TSTG
DO-35 Axial Lead
Ordering Information
mW
Type Number
C
Marking : DB3/DB3TG
High temperature soldering guaranteed: 260°C/10s
High reliability glass passivation insuring parameter
Pb free version and RoHS compliant
A
B
C
D
Version : D10
DB3-DB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
Electrical Characteristics
Min.
Typ.
Max.
Break-over Voltage Symmetry C= 22nF + / -VBO Max.
Break-over Current C= 22nF IBO Max.
Dynamic Breakover Voltage IBO to IF=10mA ΔV Min.
VB=IBMax.
Output Voltage VOMin.
Tape & Reel specification
μA100
Symbol
V
Units
+ / - 2
28 30
Item Symbol Dimension(mm)
Leakage Current 10
V5
μA
*see diagram 1
Overall width A 64+1.69/-0.69
Tape spacing B 52.0+/-0.69
Component Pitch C 5.08+/-0.40
Untaped lead L1-L2 +/-0.69
Bent K 1.2 Max
Tape Mismatch E 0.55(MAX)
Glass offset F 0.69(MAX)
Taped lead G 3.2Min
lead beyond tape H 0
Reel outside diamete
r
D 260+/-3
Type Number
0.5VBO (MAX)
DB3TGDB3
+ / - 3
Break-over Voltage
15
34
Reel width W1 72+3/-1
Reel inner diameter D1 48+/-1
Feed hole width D2 20+/-0.5
59 V
C= 22nF VBO V32 32
36
E
L2
L1
F
G
H
BA
CK
W1
D1D2
D
Version : D10
DB3-DB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
Rating and Characteristic Curves
VBO :Break-Over Voltage
IBO : Break-Over Current
ΔV: Dynamic Breakover Voltage
IB: Leakage Current at VB=0.5*VBO
VF: Voltage at Current IF=10mA
0.1
1
10
100
1 10 100
tp (μs)
Repetitive peak pulse current (A)
FIG 3 Repetitive peak pulse current versus pulse
duration (maximum values)
1.00
1.01
1.02
1.03
1.04
1.05
1.06
1.07
1.08
25 50 75 100 125
VBO [Tj] / VBO [Tj=25°C]
FIG 2 Relative variation of VBO versus junction
temperature (typical values)
Tj(°C)
Diagram 1: Test Circuit
ΔV
VBO
VB=0.5*VBO
VF
IF=10m
IBO
IB
Ambient Tempeatature (oC)
FIG 1 Admissible Power Dissipation Curve
0
40
80
120
160
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Power Dissipation (mW)
V
I
Version : D10
