R6024ENJ
Nch 600V 24A Power MOSFET Datasheet
llOutline
VDSS 600V TO-263
RDS(on)(Max.) 0.165Ω SC-83
ID±24A LPT(S)
PD245W
llInner circuit
llFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to
be ±20V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant llPackaging specifications
Type
Packing Embossed
Tape
Reel size (mm) 330
llApplication Tape width (mm) 24
Switching Basic ordering unit (pcs) 1000
Taping code TL
Marking R6024ENJ
llAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 600 V
Continuous drain current TC = 25°C ID*1 ±24 A
TC = 100°C ID*1 ±13.0 A
Pulsed drain current IDP*2 ±72 A
Gate - Source voltage static VGSS
±20 V
AC(f＞1Hz) ±30 V
Avalanche current, repetitive IAR 4.1 A
Avalanche energy, single pulse EAS*3 497 mJ
Avalanche energy, repetitive EAR*3 0.75 mJ
Power dissipation (TC = 25°C) PD*4 245 W
Junction temperature Tj150 ℃
Operating junction and storage temperature range Tstg -55～+150 ℃
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© 2016 ROHM Co., Ltd. All rights reserved. 1/12 20160324 - Rev.001
R6024ENJ Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Reverse diode dv/dt dv/dt - 15 V/ns
Drain - Source voltage slope dv/dt VDS = 480V, Tj = 25℃50 V/ns
llThermal resistance
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.51 ℃/W
Thermal resistance, junction - ambient RthJA
*5 - - 80 ℃/W
Soldering temperature, wavesoldering for 10s Tsold - - 265 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V
Zero gate voltage
drain current IDSS
VDS = 600V, VGS = 0V
μA
Tj = 25°C - 0.1 100
Tj = 125°C - - 1000
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±100 nA
Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 2 - 4 V
Static drain - source
on - state resistance RDS(on)*6
VGS = 10V, ID = 11.3A
Ω
Tj = 25°C - 0.150 0.165
Tj = 125°C - 0.320 -
Gate resistance RG f =1MHz, open drain - 6.1 - Ω
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© 2016 ROHM Co., Ltd. All rights reserved. 2/12 20160324 - Rev.001
R6024ENJ Datasheet
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Forward Transfer
Admittance |Yfs|*6 VDS = 10V, ID = 12A 6.5 13.0 - S
Input capacitance Ciss VGS = 0V - 1650 -
pF
Output capacitance Coss VDS = 25V - 1350 -
Reverse transfer capacitance Crss f = 1MHz - 160 -
Effective output capacitance,
energy related Co(er)
- 66 -
pF
VGS = 0V
Effective output capacitance,
time related Co(tr)
VDS = 0V to 480V
- 314 -
Turn - on delay time td(on)*6 VDD ⋍ 300V,VGS = 10V - 35 -
ns
Rise time tr*6 ID = 12A - 50 -
Turn - off delay time td(off)*6 RL ⋍ 27.4Ω - 180 -
Fall time tf*6 RG = 10Ω - 50 -
llGate charge characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Total gate charge Qg*6
VDD ⋍ 300V,
ID = 24A,
VGS = 10V
- 70 -
nCGate - Source charge Qgs*6 - 10 -
Gate - Drain charge Qgd*6 - 35 -
Gate plateau voltage V(plateau) VDD = 300V, ID = 24A - 6.4 - V
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃
*4 TC=25℃
*5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm)
*6 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved. 3/12 20160324 - Rev.001
R6024ENJ Datasheet
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Continuous forward
current IS*1
Tc = 25℃
- - 24 A
Pulse forward current ISP*2 - - 72 A
Forward voltage VSD*6 VGS = 0V, IS = 24A - - 1.5 V
Reverse recovery time trr*6
IS = 24A, VGS=0V
di/dt = 100A/μs
- 625 - ns
Reverse recovery charge Qrr*6 - 13.3 - μC
Peak reverse recovery current Imm*6 - 42 - A
llTypical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
Rth1 0.0578
K/W
Cth1 0.00248
Ws/K
Rth2 0.218 Cth2 0.00916
Rth3 0.604 Cth3 0.209
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© 2016 ROHM Co., Ltd. All rights reserved. 4/12 20160324 - Rev.001
R6024ENJ Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.3 Avalanche Energy Derating
Curve vs. Junction Temperature
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© 2016 ROHM Co., Ltd. All rights reserved. 5/12 20160324 - Rev.001
R6024ENJ Datasheet
llElectrical characteristic curves
Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)
Fig.6 Tj = 150°C Typical Output
Characteristics (I)
Fig.7 Tj = 150°C Typical Output
Characteristics (II)
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© 2016 ROHM Co., Ltd. All rights reserved. 6/12 20160324 - Rev.001
R6024ENJ Datasheet
llElectrical characteristic curves
Fig.8 Breakdown Voltage vs.
Junction Temperature
Fig.9 Typical Transfer Characteristics
Fig.10 Gate Threshold Voltage vs.
Junction Temperature
Fig.11 Forward Transfer Admittance vs.
Drain Current
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© 2016 ROHM Co., Ltd. All rights reserved. 7/12 20160324 - Rev.001
R6024ENJ Datasheet
llElectrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(l)
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(ll)
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© 2016 ROHM Co., Ltd. All rights reserved. 8/12 20160324 - Rev.001
R6024ENJ Datasheet
llElectrical characteristic curves
Fig.16 Typical Capacitance vs.
Drain - Source Voltage
Fig.17 Coss Stored Energy
Fig.18 Switching Characteristics Fig.19 Dynamic Input Characteristics
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© 2016 ROHM Co., Ltd. All rights reserved. 9/12 20160324 - Rev.001
R6024ENJ Datasheet
llElectrical characteristic curves
Fig.20 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.21 Reverse Recovery Time vs.
Inverse Diode Forward Current
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© 2016 ROHM Co., Ltd. All rights reserved. 10/12 20160324 - Rev.001
R6024ENJ Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 dv/dt Measurement Circuit
Fig.5-2 dv/dt Waveform
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© 2016 ROHM Co., Ltd. All rights reserved. 11/12 20160324 - Rev.001
R6024ENJ Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 12/12 20160324 - Rev.001
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
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(Note1) Medical Equipment Classification of the Specific Applications
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CLASSⅢ
CLASSⅢ
CLASSⅡb
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CLASSⅣ
CLASSⅢ
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[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
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7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
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Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
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please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
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This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
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isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
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1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
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3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
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