MRF8S21140HR3 MRF8S21140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency Gps
(dB) hD
(%) Output PAR
(dB) ACPR
(dBc)
2110 MHz 17.7 32.1 6.2 -37.0
2140 MHz 17.9 31.7 6.4 -37.5
2170 MHz 18.1 31.7 6.4 -37.5
•Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
•Typical Pout @ 1 dB Compression Point ] 126 Watts CW
Features
•100% PAR Tested for Guaranteed Output Power Capability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
•Internally Matched for Ease of Use
•Integrated ESD Protection
•Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
•Designed for Digital Predistortion Error Correction Systems
•Optimized for Doherty Applications
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (2,3) TJ225 °C
CW Operation @ TC = 25°C
Derate above 25°C
CW 168
0.86
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value (3,4) Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 34 W CW, 28 Vdc, IDQ = 970 mA, 2140 MHz
Case Temperature 80°C, 150 W CW(1), 28 Vdc, IDQ = 970 mA, 2140 MHz
RθJC
0.47
0.42
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF8S21140H
Rev. 0, 5/2010
Freescale Semiconductor
Technical Data
2110-2170 MHz, 34 W AVG., 28 V
W-CDMA, LTE
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF8S21140HR3
MRF8S21140HSR3
CASE 465A-06, STYLE 1
NI-780S
MRF8S21140HSR3
CASE 465-06, STYLE 1
NI-780
MRF8S21140HR3
Freescale Semiconductor, Inc., 2010. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 2 (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th) 1.0 1.8 2.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 970 mAdc)
VGS(Q) — 2.6 — Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 970 mAdc, Measured in Functional Test)
VGG(Q) 3.8 5.2 6.8 Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on) 0.1 0.18 0.3 Vdc
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg., f = 2140 MHz,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps 16.7 17.9 19.7 dB
Drain Efficiency ηD29.7 31.7 — %
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF PAR 5.9 6.4 — dB
Adjacent Channel Power Ratio ACPR — -37.5 -36 dBc
Input Return Loss IRL — -16 -7 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg.,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency Gps
(dB) hD
(%) Output PAR
(dB) ACPR
(dBc) IRL
(dB)
2110 MHz 17.7 32.1 6.2 -37.0 -17
2140 MHz 17.9 31.7 6.4 -37.5 -16
2170 MHz 18.1 31.7 6.4 -37.5 -16
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21140HR3 MRF8S21140HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, 2110-2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB — 126 — W
IMD Symmetry @ 55 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
IMDsym
— 10 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres — 53 — MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 34 W Avg. GF— 0.5 — dB
Gain Variation over Temperature
(-30 °C to +85°C)
∆G — 0.016 — dB/°C
Output Power Variation over Temperature
(-30 °C to +85°C)
∆P1dB — 0.018 (1) — dBm/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
Figure 1. MRF8S21140HR3(HSR3) Test Circuit Component Layout
MRF8S21140
Rev. 0
CUT OUT AREA
C1
R1
R3
R2 C2
C3 C4
C8* R4
C7*
C6
C5 C9*
C21
C22 C23
C24
C12*
C13*
C15*
C16
C14*
C10*
C11*
C17
C18 C19
C20
*C7, C8, C9, C10, C11, C12, C13, C14, and C15 are mounted vertically.
Table 5. MRF8S21140HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 10 µF Chip Capacitor T491D106K055AT Kemet
C2 0.01 µF Chip Capacitor C1825C103K1GAC Kemet
C3 4.7 µF Chip Capacitor GRM43ER61H475MA88L Murata
C4, C17, C21 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C5, C16 11 pF Chip Capacitors ATC100B110JT500XT ATC
C6 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC
C7 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
C8, C9, C11, C13, C14 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC
C10, C12 0.1 pF Chip Capacitors ATC100B0R1BT500XT ATC
C15 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC
C18, C19, C22, C23 10 µF Chip Capacitors GRM55DR61H106KA88L Murata
C20, C24 470 µF, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
R1, R2 2 kΩ, 1/4 W Chip Resistors CRCW12062K00FKEA Vishay
R3 0 Ω, 3.5 A Chip Resistor CRCW12060000Z0EA Vishay
R4 2.37 Ω, 1/4 W Chip Resistor CRCW12062R37FNEA Vishay
PCB 0.030″, εr = 2.55 AD255A Arlon
MRF8S21140HR3 MRF8S21140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2060
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 34 Watts Avg.
0
-12
-24
16
20
19.5
19
-40
40
36
32
24
-20
-24
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
18.5
18
17.5
17
16.5
2080 2100 2120 2140 2160 2180 2200 2220
28
-28
-30
PARC
PARC (dB)
0
-1
-2
-3
-5
ACPR (dBc)
Figure 3. Intermodulation Distortion Products
versus Two-Tone Spacing
TWO-T ONE SPACING (MHz)
10
-2 0
-3 0
-5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-4 0
IM3-U
IM3-L
IM5-U
IM5-L
IM7-U
VDD = 28 Vdc, Pout = 55 W (PEP), IDQ = 970 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-1
-3
-5
40
0
-2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20 60 80 120
21
57
45
39
33
ηD, DRAIN EFFICIENCY (%)
ηD
ACPR
PARC
ACPR (dBc)
-50
-20
-30
-25
-35
19
Gps, POWER GAIN (dB)
17
18
16
15
13
Gps
-2 dB = 44 W
-3 dB = 60 W
-60
-1 0
IM7-L
15.5
15
-32
-36
-18
-4
14 -4
100
-40
51
-1 dB = 32 W
-6
-4527
VDD = 28 Vdc, Pout = 34 W (Avg.), IDQ = 970 mA
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
VDD = 28 Vdc, IDQ = 970 mA, f = 2140 MHz
Single-Carrier W-CDMA
6
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
TYPICAL CHARACTERISTICS
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-10
8
20 60
40
30
20
10
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
18
300
-60
ACPR (dBc)
16
0
-20
-30
Figure 6. Broadband Frequency Response
0
21
1700
f, FREQUENCY (MHz)
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 970 mA
10.5
GAIN (dB)
17.5
1810 2250 2580
IRL
-21
0
-10.5
-14
-17.5
IRL (dB)
14
12
50
-50
-40
3.5
14 -7
-3.5
10
1
7
10
1920 2030 2140 2360 2470
0
ηD
Gps
2110 MHz
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
2140 MHz
2170 MHz
2110 MHz
2140 MHz
2170 MHz
VDD = 28 Vdc, IDQ = 970 mA, Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth
100
Gain
W-CDMA TEST SIGNAL
0.0001
100
0
PEAK-T O-AVERAGE (dB)
Figure 7. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W-CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-60
-100
10
(dB)
-20
-30
-40
-50
-70
-80
-90
3.84 MHz
Channel BW
7.2
1.8 5.4
3.6
0
-1.8
-3.6
-5.4
-9 9
f, FREQUENCY (MHz)
Figure 8. Single-Carrier W-CDMA Spectrum
-7.2
-ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
-10
0
13579
MRF8S21140HR3 MRF8S21140HSR3
7
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg.
f
MHz Zsource
W
Zload
W
2060 5.09 - j3.45 1.78 - j4.17
2080 5.35 - j3.20 1.75 - j4.06
2100 5.64 - j3.01 1.72 - j3.98
2120 6.01 - j2.86 1.72 - j3.92
2140 6.42 - j2.72 1.73 - j3.83
2160 6.82 - j2.62 1.75 - j3.71
2180 7.25 - j2.62 1.75 - j3.62
2200 7.76 - j2.73 1.76 - j3.54
2220 8.28 - j2.87 1.77 - j3.43
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 970 mA, Pulsed CW,
10 µsec(on), 10% Duty Cycle
51
47
43
38 4240 44
Actual
Ideal
53
49
41
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
45
55
59
61
63
34323024 462826
57
2110 MHz
2110 MHz
2140 MHz
2170 MHz
2140 MHz
2170 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
2110 191 52.8 232 53.7
2140 182 52.6 219 53.4
2170 179 52.5 216 53.3
Test Impedances per Compression Level
f
(MHz) Zsource
Ω
Zload
Ω
2110 P1dB 6.74 - j4.91 0.95 - j2.96
2140 P1dB 8.26 - j6.27 0.98 - j3.02
2170 P1dB 8.34 - j0.34 1.07 - j2.82
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S21140HR3 MRF8S21140HSR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
10
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
MRF8S21140HR3 MRF8S21140HSR3
11
RF Device Data
Freescale Semiconductor
12
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
MRF8S21140HR3 MRF8S21140HSR3
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
•.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2010 •Initial Release of Data Sheet
14
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
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Document Number: MRF8S21140H
Rev. 0, 5/2010