Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) 2110 MHz 17.7 32.1 6.2 -37.0 2140 MHz 17.9 31.7 6.4 -37.5 2170 MHz 18.1 31.7 6.4 -37.5 2110-2170 MHz, 34 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs * Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 1 dB Compression Point ] 126 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465-06, STYLE 1 NI-780 MRF8S21140HR3 CASE 465A-06, STYLE 1 NI-780S MRF8S21140HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature (2,3) TJ 225 C CW 168 0.86 W W/C Symbol Value (3,4) CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75C, 34 W CW, 28 Vdc, IDQ = 970 mA, 2140 MHz Case Temperature 80C, 150 W CW(1), 28 Vdc, IDQ = 970 mA, 2140 MHz Unit C/W RJC 0.47 0.42 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8S21140HR3 MRF8S21140HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 1.0 1.8 2.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 970 mAdc) VGS(Q) -- 2.6 -- Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 970 mAdc, Measured in Functional Test) VGG(Q) 3.8 5.2 6.8 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) 0.1 0.18 0.3 Vdc Off Characteristics On Characteristics Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg., f = 2140 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 16.7 17.9 19.7 dB Drain Efficiency D 29.7 31.7 -- % PAR 5.9 6.4 -- dB ACPR -- -37.5 -36 dBc IRL -- -16 -7 dB Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 17.7 32.1 6.2 -37.0 -17 2140 MHz 17.9 31.7 6.4 -37.5 -16 2170 MHz 18.1 31.7 6.4 -37.5 -16 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF8S21140HR3 MRF8S21140HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, 2110-2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB -- 126 -- -- 10 -- W IMD Symmetry @ 55 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres -- 53 -- MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 34 W Avg. GF -- 0.5 -- dB Gain Variation over Temperature (-30 C to +85C) G -- 0.016 -- dB/C P1dB -- 0.018 (1) -- dBm/C Output Power Variation over Temperature (-30 C to +85C) MHz 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8S21140HR3 MRF8S21140HSR3 RF Device Data Freescale Semiconductor 3 C18 C19 C17 C3 C4 R3 C20 R1 C11* R2 C2 C7* C6 C8* R4 C9* C5 C10* CUT OUT AREA C1 C14* C15* C12* C16 C13* MRF8S21140 Rev. 0 C24 C21 C22 C23 *C7, C8, C9, C10, C11, C12, C13, C14, and C15 are mounted vertically. Figure 1. MRF8S21140HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S21140HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 10 F Chip Capacitor T491D106K055AT Kemet C2 0.01 F Chip Capacitor C1825C103K1GAC Kemet C3 4.7 F Chip Capacitor GRM43ER61H475MA88L Murata C4, C17, C21 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C5, C16 11 pF Chip Capacitors ATC100B110JT500XT ATC C6 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C7 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C8, C9, C11, C13, C14 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC C10, C12 0.1 pF Chip Capacitors ATC100B0R1BT500XT ATC C15 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C18, C19, C22, C23 10 F Chip Capacitors GRM55DR61H106KA88L Murata C20, C24 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp R1, R2 2 k, 1/4 W Chip Resistors CRCW12062K00FKEA Vishay R3 0 , 3.5 A Chip Resistor CRCW12060000Z0EA Vishay R4 2.37 , 1/4 W Chip Resistor CRCW12062R37FNEA Vishay PCB 0.030, r = 2.55 AD255A Arlon MRF8S21140HR3 MRF8S21140HSR3 4 RF Device Data Freescale Semiconductor 40 D Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 32 28 Gps 18 24 17.5 -20 0 17 PARC -24 -6 16.5 -28 IRL 16 -32 15.5 ACPR 15 2060 2080 2100 2120 2140 -36 2160 2180 2200 ACPR (dBc) Gps, POWER GAIN (dB) 19 18.5 36 -12 -18 -24 -40 2220 -30 0 -1 -2 -3 PARC (dB) VDD = 28 Vdc, Pout = 34 W (Avg.), IDQ = 970 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth 19.5 IRL, INPUT RETURN LOSS (dB) 20 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS -4 -5 f, FREQUENCY (MHz) Figure 2. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 34 Watts Avg. IMD, INTERMODULATION DISTORTION (dBc) -1 0 VDD = 28 Vdc, Pout = 55 W (PEP), IDQ = 970 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz -2 0 IM3-U -3 0 IM3-L IM5-U -4 0 IM5-L -5 0 IM7-L IM7-U -60 1 10 100 TWO-T ONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two-T one Spacing 16 15 14 13 0 VDD = 28 Vdc, IDQ = 970 mA, f = 2140 MHz Single-Carrier W-CDMA ACPR 57 -20 51 -25 D -1 dB = 32 W 45 -1 -2 dB = 44 W -2 39 Gps -3 dB = 60 W -3 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF -4 -5 20 40 60 33 -30 -35 ACPR (dBc) 17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 18 1 D, DRAIN EFFICIENCY (%) 19 -40 27 -45 21 -50 PARC 80 100 120 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power MRF8S21140HR3 MRF8S21140HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS D Gps, POWER GAIN (dB) 18 ACPR 16 2170 MHz 2110 MHz 60 0 50 -10 40 2140 MHz 30 14 Gps 2170 MHz 12 20 2140 MHz 2110 MHz 10 10 -20 ACPR (dBc) VDD = 28 Vdc, IDQ = 970 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 20 -30 -40 -50 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 8 1 10 -60 0 300 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 21 Gain 17.5 -3.5 GAIN (dB) -10.5 10.5 7 IRL (dB) -7 14 -14 IRL VDD = 28 Vdc Pin = 0 dBm IDQ = 970 mA 3.5 0 1700 1810 1920 2030 2140 2250 2360 2470 -17.5 -21 2580 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 0 -10 3.84 MHz Channel BW -20 1 Input Signal -30 0.1 (dB) PROBABILITY (%) 10 0.01 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 1 2 3 4 5 6 -40 -50 -60 +ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -70 -80 7 8 9 PEAK-T O-A VERAGE (dB) Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal 10 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single-Carrier W-CDMA Spectrum MRF8S21140HR3 MRF8S21140HSR3 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg. f MHz Zsource W Zload W 2060 5.09 - j3.45 1.78 - j4.17 2080 5.35 - j3.20 1.75 - j4.06 2100 5.64 - j3.01 1.72 - j3.98 2120 6.01 - j2.86 1.72 - j3.92 2140 6.42 - j2.72 1.73 - j3.83 2160 6.82 - j2.62 1.75 - j3.71 2180 7.25 - j2.62 1.75 - j3.62 2200 7.76 - j2.73 1.76 - j3.54 2220 8.28 - j2.87 1.77 - j3.43 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S21140HR3 MRF8S21140HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 970 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 63 61 Pout, OUTPUT POWER (dBm) 59 Ideal 57 55 2170 MHz 53 Actual 51 2110 MHz 2140 MHz 49 2140 MHz 2170 MHz 47 45 2110 MHz 43 41 24 26 28 30 32 34 36 38 40 42 44 46 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2110 191 52.8 232 53.7 2140 182 52.6 219 53.4 2170 179 52.5 216 53.3 Test Impedances per Compression Level f (MHz) Zsource Zload 2110 P1dB 6.74 - j4.91 0.95 - j2.96 2140 P1dB 8.26 - j6.27 0.98 - j3.02 2170 P1dB 8.34 - j0.34 1.07 - j2.82 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S21140HR3 MRF8S21140HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S21140HR3 MRF8S21140HSR3 RF Device Data Freescale Semiconductor 9 MRF8S21140HR3 MRF8S21140HSR3 10 RF Device Data Freescale Semiconductor MRF8S21140HR3 MRF8S21140HSR3 RF Device Data Freescale Semiconductor 11 MRF8S21140HR3 MRF8S21140HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2010 Description * Initial Release of Data Sheet MRF8S21140HR3 MRF8S21140HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S21140HR3 MRF8S21140HSR3 Document Number: MRF8S21140H Rev. 0, 5/2010 14 RF Device Data Freescale Semiconductor